Información ORCID de MOLINA RUBIO, SERGIO IGNACIO


Biografía


ull,


Empleo


PROF. (DEPARTAMENTO DE CIENCIA DE LOS MATERIALES E ING. METALÚRGICA Y QUÍMICA INORGÁNICA)

Universidad de Cadiz Campus de Rio San Pedro: Puerto Real, CADIZ, España



Obras


Gaussian kernel density functions for compositional quantification in atom probe tomography

2018 | JOURNAL_ARTICLE

DOI: 10.1016/j.matchar.2018.02.033

EID: 2-s2.0-85042483462

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Geometric-Structural Study of the Accelerated Degradation of Mold Cavities for HDPE Injection

2018 | JOURNAL_ARTICLE

DOI: 10.1007/s11668-017-0378-0

EID: 2-s2.0-85039858939

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Effect of an in-situ thermal annealing on the structural properties of self-assembled GaSb/GaAs quantum dots

2017 | JOURNAL_ARTICLE

DOI: 10.1016/j.apsusc.2016.04.131

EID: 2-s2.0-84964608866

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Effect of annealing on the compositional modulation of InAlAsSb

2017 | JOURNAL_ARTICLE

DOI: 10.1016/j.apsusc.2016.06.091

EID: 2-s2.0-84999737931

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Size effect and scaling power-law for superelasticity in shape-memory alloys at the nanoscale

2017 | JOURNAL_ARTICLE

DOI: 10.1038/nnano.2017.91

EID: 2-s2.0-85026856778

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Structural characterization of InAlAsSb/InGaAs/InP heterostructures for solar cells

2017 | JOURNAL_ARTICLE

DOI: 10.1016/j.apsusc.2016.07.094

EID: 2-s2.0-85027936688

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Wide bandgap, strain-balanced quantum well tunnel junctions on InP substrates

2016 | JOURNAL_ARTICLE

DOI: 10.1063/1.4948958

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Atom probe tomography analysis of InAlGaAs capped InAs/GaAs stacked quantum dots with variable barrier layer thickness

2016 | JOURNAL_ARTICLE

DOI: 10.1016/j.actamat.2015.10.048

EID: 2-s2.0-84947284161

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Atom-scale compositional distribution in InAlAsSb-based triple junction solar cells by atom probe tomography

2016 | JOURNAL_ARTICLE

DOI: 10.1088/0957-4484/27/30/305402

EID: 2-s2.0-84978419921

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Atomic-column scanning transmission electron microscopy analysis of misfit dislocations in GaSb/GaAs quantum dots

2016 | JOURNAL_ARTICLE

DOI: 10.1007/s10853-016-0051-0

EID: 2-s2.0-84969180144

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CVD synthesis of carbon spheres using NiFe-LDHs as catalytic precursors: Structural, electrochemical and magnetoresistive properties

2016 | JOURNAL_ARTICLE

DOI: 10.1039/c5tc02861b

EID: 2-s2.0-84954158283

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HAADF-STEM analysis of the composition distribution in InAlAsSb/InGaAs/InP layers for solar cells applications

2016 | JOURNAL_ARTICLE

DOI: 10.1017/S1431927616000349

EID: 2-s2.0-85014521225

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Small-pore driven high capacitance in a hierarchical carbon: Via carbonization of Ni-MOF-74 at low temperatures

2016 | JOURNAL_ARTICLE

DOI: 10.1039/c6cc02252a

EID: 2-s2.0-84978383968

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Structural quality of GaSb/GaAs quantum dots for solar cells analyzed by electron microscopy techniques

2016 | JOURNAL_ARTICLE

DOI: 10.1017/S1431927616000386

EID: 2-s2.0-85014435440

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3D compositional analysis at atomic scale of InAlGaAs capped InAs/GaAs QDs

2015 | JOURNAL_ARTICLE

DOI: 10.1016/j.scriptamat.2015.03.013

EID: 2-s2.0-84928269446

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Delta doping and positioning effects of type II GaSb quantum dots in GaAs solar cell

2015 | JOURNAL_ARTICLE

DOI: 10.1080/14328917.2015.1115807

EID: 2-s2.0-84958698833

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Effect of doping on the morphology of GaSb/GaAs nanostructures for solar cells

2015 | JOURNAL_ARTICLE

DOI: 10.1016/j.apsusc.2015.10.161

EID: 2-s2.0-84961806928

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High spatial resolution mapping of individual and collective localized surface plasmon resonance modes of silver nanoparticle aggregates: correlation to optical measurements

2015 | JOURNAL_ARTICLE

DOI: 10.1186/s11671-015-1024-y

EID: 2-s2.0-84938509659

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Mapping the plasmonic response of gold nanoparticles embedded in TiO2 thin films

2015 | JOURNAL_ARTICLE

DOI: 10.1088/0957-4484/26/40/405702

EID: 2-s2.0-84947568036

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Molecular beam epitaxy of InAlAsSb for the top cell in high-efficiency InP-based lattice-matched triple-junction solar cells

2015 | CONFERENCE_PAPER

DOI: 10.1109/PVSC.2015.7355911

EID: 2-s2.0-84961615482

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A methodology for the extraction of quantitative information from electron microscopy images at the atomic level

2014 | JOURNAL_ARTICLE

DOI: 10.1088/1742-6596/522/1/012013

EID: 2-s2.0-84902996538

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Analysis of electron beam damage of exfoliated MoS2 sheets and quantitative HAADF-STEM imaging

2014 | JOURNAL_ARTICLE

DOI: 10.1016/j.ultramic.2014.05.004

EID: 2-s2.0-84902355461

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Charge transfer interactions in self-assembled single walled carbon nanotubes/Dawson-Wells polyoxometalate hybrids

2014 | JOURNAL_ARTICLE

DOI: 10.1039/c4sc01335b

EID: 2-s2.0-84907518041

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Defect reduction in heteroepitaxial InP on Si by epitaxial lateral overgrowth

2014 | JOURNAL_ARTICLE

DOI: 10.1166/mex.2014.1140

EID: 2-s2.0-84892704735

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Modeling, design and experimental results for high efficiency multi-junction solar cells lattice matched to InP

2014 | CONFERENCE_PAPER

DOI: 10.1117/12.2041289

EID: 2-s2.0-84901797763

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Preferential sites for InAsP/InP quantum wire nucleation using molecular dynamics

2014 | JOURNAL_ARTICLE

DOI: 10.1140/epjb/e2014-50052-2

EID: 2-s2.0-84919723286

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Transmission electron microscopy of 1D-nanostructures

2014 | BOOK

DOI: 10.1007/978-3-642-38934-4_14

EID: 2-s2.0-85031024950

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Compositional analysis of InAs-GaAs-GaSb heterostructures by Low-Loss Electron Energy Loss Spectroscopy

2013 | JOURNAL_ARTICLE

DOI: 10.1088/1742-6596/471/1/012012

EID: 2-s2.0-84890625059

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Extreme voltage recovery in GaAs:Ti intermediate band solar cells

2013 | JOURNAL_ARTICLE

DOI: 10.1016/j.solmat.2012.09.028

EID: 2-s2.0-84867606657

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High spatial resolution mapping of surface plasmon resonance modes in single and aggregated gold nanoparticles assembled on DNA strands

2013 | JOURNAL_ARTICLE

DOI: 10.1186/1556-276X-8-337

EID: 2-s2.0-84898061506

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Influence of RF-sputtering power on formation of vertically stacked Si 1-xGex nanocrystals between ultra-thin amorphous Al 2O3 layers: Structural and photoluminescence properties

2013 | JOURNAL_ARTICLE

DOI: 10.1088/0022-3727/46/38/385301

EID: 2-s2.0-84885099900

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Strain analysis for the prediction of the preferential nucleation sites of stacked quantum dots by combination of FEM and APT

2013 | JOURNAL_ARTICLE

DOI: 10.1186/1556-276x-8-513

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Strain analysis for the prediction of the preferential nucleation sites of stacked quantum dots by combination of FEM and APT

2013 | JOURNAL_ARTICLE

DOI: 10.1186/1556-276X-8-513

EID: 2-s2.0-84891391074

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Towards High Efficiency Multi-Junction Solar Cells Grown on InP Substrates

2013 | JOURNAL_ARTICLE

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Towards high efficiency multi-junction solar cells grown on InP Substrates

2013 | CONFERENCE_PAPER

DOI: 10.1109/PVSC.2013.6744116

EID: 2-s2.0-84896466261

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A methodology for the fabrication by FIB of needle-shape specimens around sub-surface features at the nanometre scale

2012 | JOURNAL_ARTICLE

DOI: 10.1016/j.micron.2011.11.011

EID: 2-s2.0-84858154278

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Analysis of the 3D distribution of stacked self-assembled quantum dots by electron tomography

2012 | JOURNAL_ARTICLE

DOI: 10.1186/1556-276x-7-681

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Analysis of the 3D distribution of stacked selfassembled quantum dots by electron tomography

2012 | JOURNAL_ARTICLE

DOI: 10.1186/1556-276X-7-681

EID: 2-s2.0-84875330223

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Cubic and hexagonal InGaAsN dilute arsenides by unintentional homogeneous incorporation of As into InGaN

2012 | JOURNAL_ARTICLE

DOI: 10.1016/j.scriptamat.2011.11.025

EID: 2-s2.0-84855865656

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InAs/AlGaAs quantum dot intermediate band solar cells with enlarged sub-bandgaps

2012 | CONFERENCE_PAPER

DOI: 10.1109/PVSC.2012.6317694

EID: 2-s2.0-84869398331

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Initial Results from a 200 kV UltraSTEM

2012 | JOURNAL_ARTICLE

DOI: 10.1017/S1431927612003480

EID: 2-s2.0-85008543395

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Investigation of saturation and excitation behavior of 1.5 mu m emission from Er3+ ions in SiO2 sensitized with Si nanocrystals

2012 | JOURNAL_ARTICLE

DOI: 10.1002/pssc.201200311

EID: 2-s2.0-84871394137

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Photoluminescence Excitation Spectroscopy of Si Nanocrystals in SiO2

2012 | BOOK_CHAPTER

DOI: 10.1149/1.3700404

EID: 2-s2.0-84869044684

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Production of Nanometer-Size GaAs Nanocristals by Nanosecond Laser Ablation in Liquid

2012 | JOURNAL_ARTICLE

DOI: 10.1166/jnn.2012.4548

EID: 2-s2.0-84865125095

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Quantification of corrugation in simulated graphene by electron tomography techniques

2012 | JOURNAL_ARTICLE

DOI: 10.1063/1.4768701

EID: 2-s2.0-84869988563

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Quantitative study of the interfacial intermixing and segregation effects across the wetting layer of Ga(As,Sb)-capped InAs quantum dots

2012 | JOURNAL_ARTICLE

DOI: 10.1063/1.4731790

EID: 2-s2.0-84863706893

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Tuning the properties of Ge-quantum dots superlattices in amorphous silica matrix through deposition conditions

2012 | JOURNAL_ARTICLE

DOI: 10.1063/1.3702776

EID: 2-s2.0-84861754430

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Aberration-corrected scanning transmission electron microscopy of nanostructures for photovoltaics

2011 | CONFERENCE_PAPER

DOI: 10.1109/PVSC.2011.6186668

EID: 2-s2.0-84861033795

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Calculation of integrated intensities in aberration-corrected Z-contrast images

2011 | JOURNAL_ARTICLE

DOI: 10.1093/jmicro/dfq078

EID: 2-s2.0-79951612689

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Compositional Analysis with Atomic Column Spatial Resolution by 5th-Order Aberration-Corrected Scanning Transmission Electron Microscopy

2011 | JOURNAL_ARTICLE

DOI: 10.1017/S1431927611000213

EID: 2-s2.0-80054883821

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Distribution of bismuth atoms in epitaxial GaAsBi

2011 | JOURNAL_ARTICLE

DOI: 10.1063/1.3562376

EID: 2-s2.0-79952645546

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Formation and Emission Properties of Single InGaAs/GaAs Quantum Dots and Pairs Grown by Droplet Epitaxy

2011 | JOURNAL_ARTICLE

DOI: 10.1063/1.3666433

EID: 2-s2.0-84855488546

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Light Emission from Nanocrystalline Si Inverse Opals and Controlled Passivation by Atomic Layer Deposited Al2O3

2011 | JOURNAL_ARTICLE

DOI: 10.1002/adma.201101797

EID: 2-s2.0-81555200987

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Novel Method of Preparation of Gold-Nanoparticle-Doped TiO2 and SiO2 Plasmonic Thin Films: Optical Characterization and Comparison with Maxwell-Garnett Modeling

2011 | JOURNAL_ARTICLE

DOI: 10.1002/adfm.201101020

EID: 2-s2.0-80052994510

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Seeing inside materials by aberration-corrected electron microscopy

2011 | JOURNAL_ARTICLE

DOI: 10.1504/IJNT.2011.044438

EID: 2-s2.0-84857201880

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Strain balanced quantum posts

2011 | JOURNAL_ARTICLE

DOI: 10.1063/1.3583455

EID: 2-s2.0-79955678507

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Structural Origin of Enhanced Luminescence Efficiency of Antimony Irradiated InAs Quantum Dots

2011 | JOURNAL_ARTICLE

DOI: 10.1166/asl.2011.1873

EID: 2-s2.0-84856741424

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Structural characterization of GaSb-capped InAs/GaAs quantum dots with a GaAs intermediate layer

2011 | JOURNAL_ARTICLE

DOI: 10.1016/j.matlet.2011.02.086

EID: 2-s2.0-79953232756

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Three dimensional atom probe imaging of GaAsSb quantum rings

2011 | JOURNAL_ARTICLE

DOI: 10.1016/j.ultramic.2011.03.018

EID: 2-s2.0-79959977686

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Tuning the properties of exciton complexes in self-assembled GaSb/GaAs quantum rings

2011 | JOURNAL_ARTICLE

DOI: 10.1103/PhysRevB.83.115311

EID: 2-s2.0-79961039613

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Blocking of indium incorporation by antimony in III-V-Sb nanostructures

2010 | JOURNAL_ARTICLE

DOI: 10.1088/0957-4484/21/14/145606

EID: 2-s2.0-77949544592

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Effect of annealing on the structural and optical properties of (3 1 1)B GaAsBi layers

2010 | JOURNAL_ARTICLE

DOI: 10.1016/j.apsusc.2010.03.017

EID: 2-s2.0-77953232000

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Erratum: Structural and optical changes induced by incorporation of antimony into InAs/GaAs(001) quantum dots (Physical Review B - Condensed Matter and Materials Physics (2010) 82 (235316))

2010 | JOURNAL_ARTICLE

DOI: 10.1103/PhysRevB.82.239904

EID: 2-s2.0-78650862520

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Exploring semiconductor quantum dots and wires by high resolution electron microscopy

2010 | BOOK

DOI: 10.1088/1742-6596/209/1/012004

EID: 2-s2.0-77950483520

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Growth of Low-Density Vertical Quantum Dot Molecules with Control in Energy Emission

2010 | JOURNAL_ARTICLE

DOI: 10.1007/s11671-010-9771-2

EID: 2-s2.0-78649744946

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In-x(GayAl1-y)(1-x)As quaternary alloys for quantum dot intermediate band solar cells

2010 | BOOK

DOI: 10.1016/j.egypro.2010.07.019

EID: 2-s2.0-77957792013

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Lateral absorption measurements of InAs/GaAs quantum dots stacks: Potential as intermediate band material for high efficiency solar cells

2010 | CONFERENCE_PAPER

DOI: 10.1016/j.egypro.2010.07.006

EID: 2-s2.0-77957768748

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Morphological evolution of InAs/InP quantum wires through aberration-corrected scanning transmission electron microscopy

2010 | JOURNAL_ARTICLE

DOI: 10.1088/0957-4484/21/32/325706

EID: 2-s2.0-77957308104

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Reducing carrier escape in the InAs/GaAs quantum dot intermediate band solar cell

2010 | JOURNAL_ARTICLE

DOI: 10.1063/1.3468520

EID: 2-s2.0-77957736868

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SELENA - An open-source tool for seismic risk and loss assessment using a logic tree computation procedure

2010 | JOURNAL_ARTICLE

DOI: 10.1016/j.cageo.2009.07.006

EID: 2-s2.0-75749131365

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Strain balanced quantum posts for intermediate band solar cells

2010 | CONFERENCE_PAPER

DOI: 10.1109/PVSC.2010.5614557

EID: 2-s2.0-78650135958

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Structural and optical changes induced by incorporation of antimony into InAs/GaAs(001) quantum dots

2010 | JOURNAL_ARTICLE

DOI: 10.1103/PhysRevB.82.235316

EID: 2-s2.0-78650870276

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Surface nanostructuring of TiO2 thin films by high energy ion irradiation

2010 | JOURNAL_ARTICLE

DOI: 10.1103/PhysRevB.82.115420

EID: 2-s2.0-77957711598

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Theoretical modelling of quaternary GaInAsSb/GaAs self-assembled quantum dots

2010 | JOURNAL_ARTICLE

DOI: 10.1088/1742-6596/245/1/012081

EID: 2-s2.0-78651228025

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Through-Focal HAADF-STEM of buried nanostructures

2010 | BOOK

DOI: 10.1088/1742-6596/209/1/012032

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Transmission electron microscopy study of vertical quantum dots molecules grown by droplet epitaxy

2010 | JOURNAL_ARTICLE

DOI: 10.1016/j.apsusc.2010.03.024

EID: 2-s2.0-77953324279

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A comparison of ZnMgSSe and MgS wide bandgap semiconductors used as barriers: Growth, structure and luminescence properties

2009 | JOURNAL_ARTICLE

DOI: 10.1016/j.jcrysgro.2008.10.040

EID: 2-s2.0-63549129242

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Aberration-corrected scanning transmission electron microscopy: From atomic imaging and analysis to solving energy problems

2009 | JOURNAL_ARTICLE

DOI: 10.1098/rsta.2009.0112

EID: 2-s2.0-70349421051

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Accuracy assessment of strain mapping from Z -contrast images of strained nanostructures

2009 | JOURNAL_ARTICLE

DOI: 10.1063/1.3243990

EID: 2-s2.0-70349922931

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Carrier localization in GaBiAs probed by photomodulated transmittance and photoluminescence

2009 | JOURNAL_ARTICLE

DOI: 10.1063/1.3168429

EID: 2-s2.0-68249152254

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Column-by-column compositional mapping by Z-contrast imaging

2009 | JOURNAL_ARTICLE

DOI: 10.1016/j.ultramic.2008.10.008

EID: 2-s2.0-57849100000

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Erratum to: "Column-by-column compositional mapping by Z-contrast imaging" [Ultramicroscopy 109(2) (2009) 172-176] (DOI:10.1016/j.ultramic.2008.10.008)

2009 | JOURNAL_ARTICLE

DOI: 10.1016/j.ultramic.2009.06.008

EID: 2-s2.0-68749093801

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Formation of spatially addressed Ga(As)Sb quantum rings on GaAs(001) substrates by droplet epitaxy

2009 | JOURNAL_ARTICLE

EID: 2-s2.0-61749092018

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High resolution electron microscopy of GaAs capped GaSb nanostructures

2009 | JOURNAL_ARTICLE

DOI: 10.1063/1.3077009

EID: 2-s2.0-59349104384

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Microstructural improvements of InP on GaAs (001) grown by molecular beam epitaxy by in situ hydrogenation and postgrowth annealing

2009 | JOURNAL_ARTICLE

DOI: 10.1063/1.3077610

EID: 2-s2.0-59349102530

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Photomodulated transmittance of GaBiAs layers grown on (0 0 1) and (3 1 1)B GaAs substrates

2009 | JOURNAL_ARTICLE

DOI: 10.1016/j.mejo.2008.06.025

EID: 2-s2.0-61449169083

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A Method to Determine the Strain and Nucleation Sites of Stacked Nano-Objects

2008 | JOURNAL_ARTICLE

DOI: 10.1166/jnn.2008.123

EID: 2-s2.0-54149109849

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Aqueous Near-Infrared Fluorescent Composites Based on Apoferritin-Encapsulated PbS Quantum Dots

2008 | JOURNAL_ARTICLE

DOI: 10.1002/adma.200800530

EID: 2-s2.0-54949122142

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Carrier recombination effects in strain compensated quantum dot stacks embedded in solar cells

2008 | JOURNAL_ARTICLE

DOI: 10.1063/1.2978243

EID: 2-s2.0-52949122102

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Experimental and simulated strain field maps in stacked quantum wires

2008 | JOURNAL_ARTICLE

DOI: 10.1017/S1431927608087084

EID: 2-s2.0-49549094479

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Point defect configurations of supersaturated Au atoms inside Si nanowires

2008 | JOURNAL_ARTICLE

DOI: 10.1021/nl072670+

EID: 2-s2.0-46649108933

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Simulation of high angle annular dark field scanning transmission electron microscopy images of large nanostructures

2008 | JOURNAL_ARTICLE

DOI: 10.1063/1.2998656

EID: 2-s2.0-54149090886

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Stress compensation by GaP monolayers for stacked InAs/GaAs quantum dots solar cells

2008 | CONFERENCE_PAPER

DOI: 10.1109/PVSC.2008.4922519

EID: 2-s2.0-84879730453

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A TEM study of the evolution of InAs/GaAs self-assembled dots on (3 1 1)B GaAs with growth interruption

2007 | JOURNAL_ARTICLE

DOI: 10.1088/0268-1242/22/2/029

EID: 2-s2.0-34247244200

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Critical strain region evaluation of self-assembled semiconductor quantum dots

2007 | JOURNAL_ARTICLE

DOI: 10.1088/0957-4484/18/47/475503

EID: 2-s2.0-35748951609

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Direct imaging of quantum wires nucleated at diatomic steps

2007 | JOURNAL_ARTICLE

DOI: 10.1063/1.2790483

EID: 2-s2.0-34948840547

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Error quantification in strain mapping methods

2007 | JOURNAL_ARTICLE

DOI: 10.1017/S1431927607070407

EID: 2-s2.0-34948885612

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Excitons in coupled InAs/InP self-assembled quantum wires

2007 | JOURNAL_ARTICLE

DOI: 10.1103/PhysRevB.75.125120

EID: 2-s2.0-34047101385

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Incorporation of Sb in InAsGaAs quantum dots

2007 | JOURNAL_ARTICLE

DOI: 10.1063/1.2826546

EID: 2-s2.0-37549022212

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Molecular beam epitaxy of GaBiAs on (311) B GaAs substrates

2007 | JOURNAL_ARTICLE

DOI: 10.1063/1.2827181

EID: 2-s2.0-37549008285

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The Peak Pairs algorithm for strain mapping from HRTEM images

2007 | JOURNAL_ARTICLE

DOI: 10.1016/j.ultramic.2007.01.019

EID: 2-s2.0-34548329658

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Determination of the strain generated in InAs/InP quantum wires: Prediction of nucleation sites

2006 | JOURNAL_ARTICLE

DOI: 10.1088/0957-4484/17/22/020

EID: 2-s2.0-33846056055

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Direct experimental evidence of metastable epitaxial zinc-blende MgS

2006 | JOURNAL_ARTICLE

DOI: 10.1063/1.2353826

EID: 2-s2.0-33748955351

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Chemical composition and strain distribution of InAs/GaAs(001) stacked quantum rings

2005 | BOOK

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Quantification of the influence of TEM operation parameters on the error of HREM image matching

2005 | BOOK

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Quantitative measurements of the inhomogeneous strain field of stacked self-assembled InAs/InP(001) quantum wires by the Peak Finding Method

2005 | BOOK

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Room temperature emission at 1.6 mu m from InGaAs quantum dots capped with GaAsSb

2005 | JOURNAL_ARTICLE

DOI: 10.1063/1.2130529

EID: 2-s2.0-27744536985

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Strain mapping from HRTEM images

2005 | BOOK

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Vertical order in stacked layers of self-assembled In(Ga)As quantum rings on GaAs (001)

2005 | JOURNAL_ARTICLE

DOI: 10.1063/1.1866228

EID: 2-s2.0-17044405970

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Comparison of the thickness determined by Fresnel contrast and Rutherford backscattering spectrometry in ultra-thin layers

2004 | BOOK

EID: 2-s2.0-7744230492

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Crystalline inclusions formed in C + N + BF2 coimplanted on silicon (111)

2004 | JOURNAL_ARTICLE

EID: 2-s2.0-2942660140

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Emission wavelength engineering of InAs/InP(001) quantum wires

2004 | JOURNAL_ARTICLE

DOI: 10.1140/epjb/e2004-00228-4

EID: 2-s2.0-6344235525

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Influence of the Ge coverage prior to carbonization on the structure of SiC grown on Si(111)

2004 | BOOK

EID: 2-s2.0-8744242099

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Interfacial strain and defects in Si (001) carbonisation layers for 3C-SiC hetero-epitaxy

2004 | BOOK

EID: 2-s2.0-8644236637

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Microchemical analysis and microstructural development of Cr-doped mullites

2004 | JOURNAL_ARTICLE

EID: 2-s2.0-2942683624

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Neural networks applied to the determination of thickness and defocus from high resolution transmission electron microscopy images

2004 | BOOK

EID: 2-s2.0-7744227880

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Size and critical thickness evolution during growth of stacked layers of InAS/InP(001) quantum wires studied by in situ stress measurements

2004 | BOOK

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Size control of InAs/InP(001) quantum wires by tailoring P/As exchange

2004 | JOURNAL_ARTICLE

DOI: 10.1063/1.1787155

EID: 2-s2.0-4544224590

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Stacking of InAs/InP (001) quantum wires studied by in situ stress measurements: Role of inhomogeneous stress fields

2004 | JOURNAL_ARTICLE

DOI: 10.1063/1.1759374

EID: 2-s2.0-3042635866

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Structural study of micro and nanotubes synthesized by rapid thermal chemical vapor deposition

2004 | JOURNAL_ARTICLE

EID: 2-s2.0-2942675337

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The role of Ge predeposition temperature in the MBE epitaxy of SiC on silicon

2004 | BOOK

DOI: 10.1002/pssc.200303940

EID: 2-s2.0-2342448059

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Transmission Electron Microscopy study of SiC layers obtained by carbonization of Si wafers | Estudio por microscopía electrónica y espectroscopía de infra-rojos de capas de SiC obtenidas mediante carburización de obleas de Si

2004 | JOURNAL_ARTICLE

EID: 2-s2.0-33744750762

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Comparative TEM Investigation of MBE and RTCVD Conversion of Si into SiC

2003 | BOOK

EID: 2-s2.0-18744420199

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HRTEM study of AlxGa1-xN/AlN DBR mirrors

2003 | JOURNAL_ARTICLE

DOI: 10.1016/S0925-9635(02)00215-7

EID: 2-s2.0-0037508550

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N + BF2 and N + C + BF2 high-dose co-implantation in silicon

2003 | JOURNAL_ARTICLE

DOI: 10.1007/s00339-002-1503-8

EID: 2-s2.0-0037355744

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SiC voids, mosaic microstructure and dislocations distribution in Si carbonized layers

2003 | JOURNAL_ARTICLE

DOI: 10.1016/S0925-9635(02)00300-X

EID: 2-s2.0-0037514589

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Size and critical thickness evolution during growth of stacked layers of InAs/InP(001) quantum wires studied by in situ stress measurements

2003 | CONFERENCE_PAPER

EID: 2-s2.0-2942672682

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Size self-filtering effect in vertical stacks of InAs/InP self-assembled quantum wires

2003 | JOURNAL_ARTICLE

DOI: 10.1016/S1386-9477(02)00740-3

EID: 2-s2.0-3042681544

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Structural Study of GaN Layers Grown on Carbonized Si(111) Substrates

2003 | BOOK

EID: 2-s2.0-18744421706

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Transmission electron microscopy study of simultaneous high-dose C+ + N+ co-implantation into (1 1 1)Si

2003 | JOURNAL_ARTICLE

DOI: 10.1016/S0040-6090(02)01284-1

EID: 2-s2.0-0037463219

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Transmission electron microscopy study of ultra-thin SiC layers obtained by rapid thermal carbonization of Si wafers

2003 | JOURNAL_ARTICLE

DOI: 10.1002/pssa.200306278

EID: 2-s2.0-0037279755

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AlN buffer layer thickness influence on inversion domains in GaN/AlN/Si(1 1 1)

2002 | JOURNAL_ARTICLE

DOI: 10.1016/S0921-5107(02)00030-2

EID: 2-s2.0-0037198536

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Correlation between the AlN buffer layer thickness and the GaN polarity in GaN/AlN/Si(111) grown by MBE

2002 | CONFERENCE_PAPER

EID: 2-s2.0-0038710560

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Effect of high temperature single and multiple AlN intermediate layers on N-polar and Ga-polar GaN grown by molecular beam epitaxy

2002 | CONFERENCE_PAPER

EID: 2-s2.0-0036375685

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Filtering study of threading dislocations in AlN buffered MBE GaN/sapphire using single and multiple high temperature AlN intermediate layers

2002 | JOURNAL_ARTICLE

DOI: 10.1002/1521-396X(200208)192:2<424::AID-PSSA424>3.0.CO;2-Q

EID: 2-s2.0-0036670111

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High reflectivity AlGaN/AlN DBR mirrors grown by PA-MBE

2002 | CONFERENCE_PAPER

DOI: 10.1002/pssc.200390037

EID: 2-s2.0-84875089872

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Origin of inversion domains in GaN/AlN/Si(111) heterostructures grown by molecular beam epitaxy

2002 | JOURNAL_ARTICLE

DOI: 10.1002/1521-3951(200212)234:3<935::AID-PSSB935>3.0.CO;2-0

EID: 2-s2.0-0036929386

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Size-filtering effects by stacking InAs/InP (001) self-assembled quantum wires into multilayers

2002 | JOURNAL_ARTICLE

EID: 2-s2.0-0037098434

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A mechanism for the multiple atomic configurations of inversion domain boundaries in GaN layers grown on Si(111)

2001 | JOURNAL_ARTICLE

DOI: 10.1063/1.1396322

EID: 2-s2.0-0035956120

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Critical thickness of high-temperature AIN interlayers in GaN on sapphire (0001)

2001 | JOURNAL_ARTICLE

EID: 2-s2.0-0035331474

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Inversion domains in GaN layers grown on (111) silicon by molecular-beam epitaxy

2001 | JOURNAL_ARTICLE

DOI: 10.1063/1.1368373

EID: 2-s2.0-0035971686

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SiC thin films obtained by Si carbonization

2001 | JOURNAL_ARTICLE

DOI: 10.1016/S0921-5107(00)00661-9

EID: 2-s2.0-0035932254

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Structural characterization of high temperature AlN intermediate layer in GaN grown by molecular beam epitaxy

2001 | JOURNAL_ARTICLE

DOI: 10.1016/S0921-5107(00)00645-0

EID: 2-s2.0-0035932234

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Structural characterization of high-dose C++N+ ion-implanted (1 1 1) Si

2001 | JOURNAL_ARTICLE

DOI: 10.1016/S0168-583X(01)00783-2

EID: 2-s2.0-0035498555

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High temperature AlN intermediate layer in GaN grown by molecular beam epitaxy

2000 | JOURNAL_ARTICLE

DOI: 10.1016/S0022-0248(00)00468-1

EID: 2-s2.0-0033721773

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Si doping effect on the defect structure in GaN/AlN/Si(111) heteroepitaxial systems

2000 | JOURNAL_ARTICLE

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Effect of the temperature ramp rate during carbonization of Si (111) on the crystalline quality of SiC produced

1999 | BOOK

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Electron microscopy study of SiC obtained by the carbonization of Si(111)

1999 | JOURNAL_ARTICLE

EID: 2-s2.0-0242580459

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Growth of III-nitrides on Si(1 1 1) by molecular beam epitaxy. Doping, optical, and electrical properties

1999 | JOURNAL_ARTICLE

DOI: 10.1016/S0022-0248(98)01346-3

EID: 2-s2.0-0038606430

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Influence of Si doping on the subgrain structure of GaN grown on AlN/Si(111)

1999 | JOURNAL_ARTICLE

DOI: 10.1002/(SICI)1521-396X(199911)176:1<401::AID-PSSA401>3.0.CO;2-D

EID: 2-s2.0-0343462255

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MBE growth of GaN and AlGaN layers on Si(1 1 1) substrates: Doping effects

1999 | JOURNAL_ARTICLE

DOI: 10.1016/S0022-0248(98)01365-7

EID: 2-s2.0-0038797130

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Properties of homoepitaxial and heteroepitaxial GaN layers grown by plasma-assisted MBE

1999 | JOURNAL_ARTICLE

DOI: 10.1002/(SICI)1521-396X(199911)176:1<447::AID-PSSA447>3.0.CO;2-A

EID: 2-s2.0-0343898013

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Structural characterisation of AlGaN/AlN/Si(111) heterostructures by transmission electron microscopy

1999 | BOOK

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Structural characterization of undoped and Si doped GaN on Si (111)

1999 | BOOK

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The effect of Si doping on the defect structure of GaN/AIN/Si(111)

1999 | JOURNAL_ARTICLE

EID: 2-s2.0-0032615080

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Transmission electron microscopy study of InGaAs/InP superlattices grown on V-shaped surface InP substrates

1999 | JOURNAL_ARTICLE

EID: 2-s2.0-0032630882

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Characterisation by TEM and X-ray diffraction of linearly graded composition InGaAs buffer layers on (001) GaAs

1998 | JOURNAL_ARTICLE

EID: 2-s2.0-1542778883

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Optical emission of a one-dimensional electron gas in semiconductor V-shaped quantum wires

1998 | JOURNAL_ARTICLE

EID: 2-s2.0-0542422199

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Relaxation mechanism of InGaAs single and graded layers grown on (111)B GaAs

1998 | JOURNAL_ARTICLE

EID: 2-s2.0-0032045633

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Structural characterization of GaN/AlN/Si (111)

1998 | BOOK

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EBIC and TEM investigations of laser heterostructures grown on linearly-graded and step-graded buffer layers

1997 | BOOK

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Influence of the surface morphology on the relaxation of low-strained InxGa1 - xAs linear buffer structures

1997 | JOURNAL_ARTICLE

EID: 2-s2.0-0031550005

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Structural study of AlGaAs/InGaAs superlattices grown by MBE on (111)B GaAs substrates

1997 | JOURNAL_ARTICLE

EID: 2-s2.0-0031071146

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Transmission electron microscopy study of Si δ-doped GaAs/AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor structures

1997 | JOURNAL_ARTICLE

EID: 2-s2.0-0031248002

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Design of InGaAs linear graded buffer structures

1995 | JOURNAL_ARTICLE

EID: 2-s2.0-36449005204

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Heterogeneous nucleation of planar defects in Mn-doped ZnSe GaAs

1995 | JOURNAL_ARTICLE

EID: 2-s2.0-0029633506

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Strain relaxation in step and linearly-graded InGaAs buffer layers on (001)GaAs

1995 | BOOK

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A STUDY OF THE DEFECT STRUCTURE IN GAAS1-XPX/GAAS ASX-LESS-THAN-0.25

1994 | BOOK

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A comparative study of CoRe superlattices sputtered on glass and Si substrates by grazing angle of incidence RBS, HRTEM, PAC, magnetic and transport properties studies

1994 | JOURNAL_ARTICLE

DOI: 10.1016/0168-583X(94)95814-9

EID: 2-s2.0-0000871939

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A study of the defect structure in GaAs layers grown at low and high temperatures on Si(001) substrates

1994 | JOURNAL_ARTICLE

DOI: 10.1016/0921-5107(94)90046-9

EID: 2-s2.0-0028725953

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CATHODOLUMINESCENCE AND TRANSMISSION ELECTRON-MICROSCOPY STUDY OF ISLAND FORMATION ON INAS/INP QW STRUCTURES DURING GROWTH INTERRUPTIONS

1994 | BOOK

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Dislocation distribution in graded composition InGaAs layers

1994 | CONFERENCE_PAPER

EID: 2-s2.0-0028344470

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Multilayer strain relaxation determination by XTEM in InGaAs step graded structures

1994 | BOOK

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Step-graded buffer layer study of the strain relaxation by transmission electron microscopy

1994 | JOURNAL_ARTICLE

DOI: 10.1016/0921-5107(94)90114-7

EID: 2-s2.0-0028695725

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Strain relief in linearly graded composition buffer layers: A design scheme to grow dislocation-free (<105 cm-2) and unstrained epilayers

1994 | JOURNAL_ARTICLE

DOI: 10.1063/1.112707

EID: 2-s2.0-21544454349

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Study of the defects structure in GaAs1-xPx/GaAs as x<0.25

1994 | CONFERENCE_PAPER

EID: 2-s2.0-0027987674

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TEM CHARACTERIZATION OF GAAS PIN DIODES AT LOW-TEMPERATURES ON SI SUBSTRATES

1994 | BOOK

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TEM characterization of GaAs pin diodes at low temperatures on Si substrates

1994 | CONFERENCE_PAPER

EID: 2-s2.0-0028015280

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TEM study of dislocation distribution in linearly-graded composition InGaAs layers on GaAs(001)

1994 | BOOK

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Transmission electron microscopy study of InxGa1-xAs/GaAs multilayer buffer structures used as dislocation filters

1994 | JOURNAL_ARTICLE

DOI: 10.1016/0921-5107(94)90118-X

EID: 2-s2.0-0028698797

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A study of the evolution process of antiphase boundaries in GaAs on Si

1993 | JOURNAL_ARTICLE

DOI: 10.1007/BF02661632

EID: 2-s2.0-51249161426

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CHARACTERIZATION OF THE GAP/SI(001) INTERFACE BY TRANSMISSION ELECTRON-MICROSCOPY

1993 | BOOK

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DEFECT STUDY OF INAS/GAAS AND GAP/GAAS DOUBLE-HETEROSTRUCTURE

1993 | BOOK

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ERRORS IN THE DETERMINATION BY HREM OF STEPS AT ALAS/GAAS INTERFACES

1993 | BOOK

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Experimental evidence of the structure of annihilation of antiphase boundaries in GaAs on Si

1993 | JOURNAL_ARTICLE

DOI: 10.1016/0167-577X(93)90094-E

EID: 2-s2.0-0027146741

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RELAXED EPITAXIAL LAYERS - THE EFFECT OF AN ADDED INTERFACE

1993 | BOOK

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Structural Characterization of GaP/GaAs/GaP heterostructure by TEM

1993 | CONFERENCE_PAPER

EID: 2-s2.0-0027803855

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Structural characterization of highly strained InAs N monolayer lasers and quantum well structures by X-ray diffraction and transmission electron microscopy

1993 | JOURNAL_ARTICLE

DOI: 10.1016/0022-0248(93)90691-O

EID: 2-s2.0-0027904737

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TEM AND PL STUDY OF STRAIN RELAXATION IN INGAAS/GAAS MQW STRUCTURES

1993 | BOOK

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DEFECT STRUCTURES IN HETEROEPITAXIAL INAS/GAAS AND GAAS/INAS GROWN BY ATOMIC LAYER MOLECULAR-BEAM EPITAXY

1992 | BOOK

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High-resolution electron microscopy study of ALMBE InAs grown on (001) GaAs substrates

1992 | JOURNAL_ARTICLE

DOI: 10.1016/0304-3991(92)90134-6

EID: 2-s2.0-0026832919

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