Publicaciones ORCID de MOLINA RUBIO, SERGIO IGNACIO

Effect of an in-situ thermal annealing on the structural properties of self-assembled GaSb/GaAs quantum dots
Applied Surface Science
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2017
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-84964608866&partnerID=MN8TOARS
Citación (BIBTEX): @article{Molina2017,title = {Effect of an in-situ thermal annealing on the structural properties of self-assembled GaSb/GaAs quantum dots},journal = {Applied Surface Science},year = {2017},volume = {395},pages = {136-139},author = {Fern{\'a}ndez-Delgado, N. and Herrera, M. and Chisholm, M.F. and Kamarudin, M.A. and Zhuang, Q.D. and Hayne, M. and Molina, S.I.}}
DOI10.1016/j.apsusc.2016.04.131
Coautoría
Fernández-Delgado, N.
Effect of annealing on the compositional modulation of InAlAsSb
Applied Surface Science
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2017
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-84999737931&partnerID=MN8TOARS
Citación (BIBTEX): @article{Molina2017,title = {Effect of annealing on the compositional modulation of InAlAsSb},journal = {Applied Surface Science},year = {2017},volume = {395},pages = {105-109},author = {Balad{\'e}s, N. and Sales, D.L. and Herrera, M. and Delgado, F.J. and Gonz{\'a}lez, M. and Clark, K. and Pinsunkajana, P. and Hoven, N. and Hubbard, S. and Tomasulo, S. and Walters, J.R. and Molina, S.I.}}
DOI10.1016/j.apsusc.2016.06.091
Coautoría
Baladés, N.
Size effect and scaling power-law for superelasticity in shape-memory alloys at the nanoscale
Nature Nanotechnology
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2017
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-85026856778&partnerID=MN8TOARS
Citación (BIBTEX): @article{Molina2017,title = {Size effect and scaling power-law for superelasticity in shape-memory alloys at the nanoscale},journal = {Nature Nanotechnology},year = {2017},volume = {12},number = {8},pages = {790-796},author = {G{\'o}mez-Cort{\'e}s, J.F. and N{\'o}, M.L. and L{\'o}pez-Ferren{\~o}, I. and Hern{\'a}ndez-Saz, J. and Molina, S.I. and Chuvilin, A. and San Juan, J.M.}}
DOI10.1038/nnano.2017.91
Coautoría
Gómez-Cortés, J.F.
Structural characterization of InAlAsSb/InGaAs/InP heterostructures for solar cells
Applied Surface Science
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2017
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-85027936688&partnerID=MN8TOARS
Citación (BIBTEX): @article{Molina2017,title = {Structural characterization of InAlAsSb/InGaAs/InP heterostructures for solar cells},journal = {Applied Surface Science},year = {2017},volume = {395},pages = {98-104},author = {Balad{\'e}s, N. and Herrera, M. and Sales, D.L. and Delgado, F.J. and Hern{\'a}ndez-Maldonado, D. and Ramasse, Q.M. and Pizarro, J. and Galindo, P. and Gonz{\'a}lez, M. and Abell, J. and Tomasulo, S. and Walters, J.R. and Molina, S.I.}}
DOI10.1016/j.apsusc.2016.07.094
Coautoría
Baladés, N.
Wide bandgap, strain-balanced quantum well tunnel junctions on InP substrates
Journal of Applied Physics
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 21/05/2016
URL de la publicación: https://doi.org/10.1063/1.4948958
Citación (BIBTEX): @article{Lumb_2016, doi = {10.1063/1.4948958}, url = {https://doi.org/10.1063%2F1.4948958}, year = 2016, month = {may}, publisher = {{AIP} Publishing}, volume = {119}, number = {19}, pages = {194503}, author = {M. P. Lumb and M. K. Yakes and M. Gonz{\'{a}}lez and M. F. Bennett and K. J. Schmieder and C. A. Affouda and M. Herrera and F. J. Delgado and S. I. Molina and R. J. Walters}, title = {Wide bandgap, strain-balanced quantum well tunnel junctions on {InP} substrates}, journal = {Journal of Applied Physics} }
DOI10.1063/1.4948958
Coautoría
M. P. Lumb
Atom probe tomography analysis of InAlGaAs capped InAs/GaAs stacked quantum dots with variable barrier layer thickness
Acta Materialia
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2016
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-84947284161&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina2016,title = {Atom probe tomography analysis of InAlGaAs capped InAs/GaAs stacked quantum dots with variable barrier layer thickness},journal = {Acta Materialia},year = {2016},volume = {103},pages = {651-657},author = {Hernández-Saz, J. and Herrera, M. and Molina, S.I. and Stanley, C.R. and Duguay, S.}}
DOI10.1016/j.actamat.2015.10.048
Coautoría
Hernández-Saz, J.
Atom-scale compositional distribution in InAlAsSb-based triple junction solar cells by atom probe tomography
Nanotechnology
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2016
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-84978419921&partnerID=MN8TOARS
Citación (BIBTEX): @article{Molina2016,title = {Atom-scale compositional distribution in InAlAsSb-based triple junction solar cells by atom probe tomography},journal = {Nanotechnology},year = {2016},volume = {27},number = {30},author = {Hern{\'a}ndez-Saz, J. and Herrera, M. and Delgado, F.J. and Duguay, S. and Philippe, T. and Gonzalez, M. and Abell, J. and Walters, R.J. and Molina, S.I.}}
DOI10.1088/0957-4484/27/30/305402
Coautoría
Hernández-Saz, J.
Atomic-column scanning transmission electron microscopy analysis of misfit dislocations in GaSb/GaAs quantum dots
Journal of Materials Science
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2016
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-84969180144&partnerID=MN8TOARS
Citación (BIBTEX): @article{Molina2016,title = {Atomic-column scanning transmission electron microscopy analysis of misfit dislocations in GaSb/GaAs quantum dots},journal = {Journal of Materials Science},year = {2016},volume = {51},number = {16},pages = {7691-7698},author = {Fern{\'a}ndez-Delgado, N. and Herrera, M. and Chisholm, M.F. and Kamarudin, M.A. and Zhuang, Q.D. and Hayne, M. and Molina, S.I.}}
DOI10.1007/s10853-016-0051-0
Coautoría
Fernández-Delgado, N.
CVD synthesis of carbon spheres using NiFe-LDHs as catalytic precursors: Structural, electrochemical and magnetoresistive properties
Journal of Materials Chemistry C
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2016
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-84954158283&partnerID=MN8TOARS
Citación (BIBTEX): @article{Molina2016,title = {CVD synthesis of carbon spheres using NiFe-LDHs as catalytic precursors: Structural, electrochemical and magnetoresistive properties},journal = {Journal of Materials Chemistry C},year = {2016},volume = {4},number = {3},pages = {440-448},author = {Carrasco, J.A. and Prima-Garcia, H. and Romero, J. and Hern{\'a}ndez-Saz, J. and Molina, S.I. and Abell{\'a}n, G. and Coronado, E.}}
DOI10.1039/c5tc02861b
Coautoría
Carrasco, J.A.
HAADF-STEM analysis of the composition distribution in InAlAsSb/InGaAs/InP layers for solar cells applications
Microscopy and Microanalysis
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2016
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-85014521225&partnerID=MN8TOARS
Citación (BIBTEX): @article{Molina2016,title = {HAADF-STEM analysis of the composition distribution in InAlAsSb/InGaAs/InP layers for solar cells applications},journal = {Microscopy and Microanalysis},year = {2016},volume = {22},pages = {30-31},author = {Balad{\'e}s, N. and Herrera, M. and Sales, D.L. and Fern{\'a}ndez, N. and Delgado, F.J. and Hern{\'a}ndez-Maldonado, D. and Ramasse, Q. and Gonz{\'a}lez, M. and Tomasulo, S. and Abell, J. and Walters, R. and Molina, S.I.}}
DOI10.1017/S1431927616000349
Coautoría
Baladés, N.
Small-pore driven high capacitance in a hierarchical carbon: Via carbonization of Ni-MOF-74 at low temperatures
Chemical Communications
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2016
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-84978383968&partnerID=MN8TOARS
Citación (BIBTEX): @article{Molina2016,title = {Small-pore driven high capacitance in a hierarchical carbon: Via carbonization of Ni-MOF-74 at low temperatures},journal = {Chemical Communications},year = {2016},volume = {52},number = {58},pages = {9141-9144},author = {Carrasco, J.A. and Romero, J. and Abell{\'a}n, G. and Hern{\'a}ndez-Saz, J. and Molina, S.I. and Mart{\'i}-Gastaldo, C. and Coronado, E.}}
DOI10.1039/c6cc02252a
Coautoría
Carrasco, J.A.
Structural quality of GaSb/GaAs quantum dots for solar cells analyzed by electron microscopy techniques
Microscopy and Microanalysis
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2016
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-85014435440&partnerID=MN8TOARS
Citación (BIBTEX): @article{Molina2016,title = {Structural quality of GaSb/GaAs quantum dots for solar cells analyzed by electron microscopy techniques},journal = {Microscopy and Microanalysis},year = {2016},volume = {22},pages = {38-39},author = {Fern{\'a}ndez-Delgado, N. and Herrera, M. and Balad{\'e}s, N. and James, J.S. and Krier, A. and Fujita, H. and Molina, S.I.}}
DOI10.1017/S1431927616000386
Coautoría
Fernández-Delgado, N.
3D compositional analysis at atomic scale of InAlGaAs capped InAs/GaAs QDs
Scripta Materialia
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2015
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-84928269446&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina2015,title = {3D compositional analysis at atomic scale of InAlGaAs capped InAs/GaAs QDs},journal = {Scripta Materialia},year = {2015},volume = {103},pages = {73-76},author = {Hernández-Saz, J. and Herrera, M. and Molina, S.I. and Stanley, C.R. and Duguay, S.}}
DOI10.1016/j.scriptamat.2015.03.013
Coautoría
Hernández-Saz, J.
Delta doping and positioning effects of type II GaSb quantum dots in GaAs solar cell
Materials Research Innovations
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2015
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-84958698833&partnerID=MN8TOARS
Citación (BIBTEX): @article{Molina2015,title = {Delta doping and positioning effects of type II GaSb quantum dots in GaAs solar cell},journal = {Materials Research Innovations},year = {2015},volume = {19},number = {7},pages = {512-516},author = {Asirvatham, J.S.J. and Fujita, H. and Fern{\'a}ndez-Delgado, N. and Herrera, M. and Molina, S.I. and Marshall, A.R.J. and Krier, A.}}
DOI10.1080/14328917.2015.1115807
Coautoría
Asirvatham, J.S.J.
Effect of doping on the morphology of GaSb/GaAs nanostructures for solar cells
Applied Surface Science
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2015
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-84961806928&partnerID=MN8TOARS
Citación (BIBTEX): @article{Molina2015,title = {Effect of doping on the morphology of GaSb/GaAs nanostructures for solar cells},journal = {Applied Surface Science},year = {2015},volume = {359},pages = {676-678},author = {Fern{\'a}ndez-Delgado, N. and Herrera, M. and Molina, S.I. and Castro, C. and Duguay, S. and James, J.S. and Krier, A.}}
DOI10.1016/j.apsusc.2015.10.161
Coautoría
Fernández-Delgado, N.
High spatial resolution mapping of individual and collective localized surface plasmon resonance modes of silver nanoparticle aggregates: correlation to optical measurements
Nanoscale Research Letters
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2015
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-84938509659&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina2015,title = {High spatial resolution mapping of individual and collective localized surface plasmon resonance modes of silver nanoparticle aggregates: correlation to optical measurements},journal = {Nanoscale Research Letters},year = {2015},volume = {10},number = {1},author = {Diaz-Egea, C. and Abargues, R. and Martínez-Pastor, J.P. and Sigle, W. and van Aken, P.A. and Molina, S.I.}}
DOI10.1186/s11671-015-1024-y
Coautoría
Diaz-Egea, C.
Mapping the plasmonic response of gold nanoparticles embedded in TiO2 thin films
Nanotechnology
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2015
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-84947568036&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina2015,title = {Mapping the plasmonic response of gold nanoparticles embedded in TiO2 thin films},journal = {Nanotechnology},year = {2015},volume = {26},number = {40},author = {Diaz-Egea, C. and Ben, T. and Herrera, M. and Hernández, J. and Pedrueza, E. and Valdés, J.L. and Martínez-Pastor, J.P. and Attouchi, F. and Mafhoud, Z. and Stéphan, O. and Molina, S.I.}}
DOI10.1088/0957-4484/26/40/405702
Coautoría
Diaz-Egea, C.
Molecular beam epitaxy of InAlAsSb for the top cell in high-efficiency InP-based lattice-matched triple-junction solar cells
2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015
Tipo de Publicación: CONFERENCE_PAPER
Fecha: 2015
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-84961615482&partnerID=MN8TOARS
Citación (BIBTEX): @article{Molina2015,title = {Molecular beam epitaxy of InAlAsSb for the top cell in high-efficiency InP-based lattice-matched triple-junction solar cells},journal = {2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015},year = {2015},author = {Tomasulo, S. and Gonzalez, M. and Tischler, J.G. and Abell, J. and Lumb, M.P. and Yakes, M.K. and Hirst, L.C. and Delgado-Gonzalez, F.J. and Herrera, M. and Molina, S.I. and Vurgaftman, I. and Meyer, J.R. and Walters, R.J.}}
DOI10.1109/PVSC.2015.7355911
Coautoría
Tomasulo, S.
A methodology for the extraction of quantitative information from electron microscopy images at the atomic level
Journal of Physics: Conference Series
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2014
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-84902996538&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina2014,title = {A methodology for the extraction of quantitative information from electron microscopy images at the atomic level},journal = {Journal of Physics: Conference Series},year = {2014},volume = {522},number = {1},author = {Galindo, P.L. and Pizarro, J. and Guerrero, E. and Guerrero-Lebrero, M.P. and Scavello, G. and Yáñez, A. and Núñez-Moraleda, B.M. and Maestre, J.M. and Sales, D.L. and Herrera, M. and Molina, S.I.}}
DOI10.1088/1742-6596/522/1/012013
Coautoría
Galindo, P.L.
Analysis of electron beam damage of exfoliated MoS2 sheets and quantitative HAADF-STEM imaging
Ultramicroscopy
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2014
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-84902355461&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina2014,title = {Analysis of electron beam damage of exfoliated MoS2 sheets and quantitative HAADF-STEM imaging},journal = {Ultramicroscopy},year = {2014},volume = {146},pages = {33-38},author = {Garcia, A. and Raya, A.M. and Mariscal, M.M. and Esparza, R. and Herrera, M. and Molina, S.I. and Scavello, G. and Galindo, P.L. and Jose-Yacaman, M. and Ponce, A.}}
DOI10.1016/j.ultramic.2014.05.004
Coautoría
Garcia, A.
Charge transfer interactions in self-assembled single walled carbon nanotubes/Dawson-Wells polyoxometalate hybrids
Chemical Science
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2014
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-84907518041&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina2014,title = {Charge transfer interactions in self-assembled single walled carbon nanotubes/Dawson-Wells polyoxometalate hybrids},journal = {Chemical Science},year = {2014},volume = {5},number = {11},pages = {4346-4354},author = {Bosch-Navarro, C. and Matt, B. and Izzet, G. and Romero-Nieto, C. and Dirian, K. and Raya, A. and Molina, S.I. and Proust, A. and Guldi, D.M. and Martí-Gastaldo, C. and Coronado, E.}}
DOI10.1039/c4sc01335b
Coautoría
Bosch-Navarro, C.
Defect reduction in heteroepitaxial InP on Si by epitaxial lateral overgrowth
Materials Express
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2014
Citación (BIBTEX): @article{RID:0116150735901-1113, title = {Defect reduction in heteroepitaxial InP on Si by epitaxial lateral overgrowth}, journal = {Materials Express}, year = {2014}, author = {Junesand, Carl and Gau, Ming-Horn and Sun, Yan-Ting and Lourdudoss, Sebastian and Lo, Ikai and Jimenez, Juan and Aitor Postigo, Pablo and Morales, Fransisco M. and Hernandez, Jesus and Molina, Sergio and Abdessamad, Aouni and Pozina, Galia and Hultman, Lars and Pirouz, Pirouz}, volume = {4}, number = {1}, pages = {41-53} }
DOI10.1166/mex.2014.1140
Coautoría
Junesand, Carl
Defect reduction in heteroepitaxial InP on Si by epitaxial lateral overgrowth
Materials Express
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2014
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-84892704735&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina2014,title = {Defect reduction in heteroepitaxial InP on Si by epitaxial lateral overgrowth},journal = {Materials Express},year = {2014},volume = {4},number = {1},pages = {41-53},author = {Junesand, C. and Gau, M.-H. and Sun, Y.-T. and Lourdudoss, S. and Lo, I. and Jimenez, J. and Postigo, P.A. and Morales, F.M. and Hernandez, J. and Molina, S. and Abdessamad, A. and Pozina, G. and Hultman, L. and Pirouz, P.}}
DOI10.1166/mex.2014.1140
Coautoría
Junesand, C.
Modeling, design and experimental results for high efficiency multi-junction solar cells lattice matched to InP
Proceedings of SPIE - The International Society for Optical Engineering
Tipo de Publicación: CONFERENCE_PAPER
Fecha: 2014
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-84901797763&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina2014,title = {Modeling, design and experimental results for high efficiency multi-junction solar cells lattice matched to InP},journal = {Proceedings of SPIE - The International Society for Optical Engineering},year = {2014},volume = {8981},author = {González, M. and Lumb, M.P. and Yakes, M.K. and Abell, J. and Tischler, J.G. and Bailey, C.G. and Vurgaftman, I. and Meyer, J.R. and Hirst, L.C. and Schmieder, K.J. and Molina, S.I. and Delgado, F.P. and Adams, J.G.J. and Hillier, G. and Ekins-Daukes, N.J. and Walters, R.J.}}
DOI10.1117/12.2041289
Coautoría
González, M.
Preferential sites for InAsP/InP quantum wire nucleation using molecular dynamics
European Physical Journal B
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2014
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-84919723286&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina2014,title = {Preferential sites for InAsP/InP quantum wire nucleation using molecular dynamics},journal = {European Physical Journal B},year = {2014},volume = {87},number = {11},author = {Nuñez-Moraleda, B. and Pizarro, J. and Guerrero, E. and Guerrero-Lebrero, M.P. and Yáñez, A. and Molina, S.I. and Galindo, P.L.}}
DOI10.1140/epjb/e2014-50052-2
Coautoría
Nuñez-Moraleda, B.
Transmission electron microscopy of 1D-nanostructures
Transmission Electron Microscopy Characterization of Nanomaterials
Tipo de Publicación: BOOK
Fecha: 2014
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-85031024950&partnerID=MN8TOARS
Citación (BIBTEX): @article{Molina2014,title = {Transmission electron microscopy of 1D-nanostructures},journal = {Transmission Electron Microscopy Characterization of Nanomaterials},year = {2014},pages = {657-701},author = {Ben, T. and Allah, R.F. and Sales, D.L. and Gonz{\'a}lez, D. and Molina, S.I.}}
DOI10.1007/978-3-642-38934-4_14
Coautoría
Ben, T.
Compositional analysis of InAs-GaAs-GaSb heterostructures by Low-Loss Electron Energy Loss Spectroscopy
18th Microscopy of Semiconducting Materials Conference (Msm Xviii)
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2013
Citación (BIBTEX): @article{RID:0116150735901-1114, title = {Compositional analysis of InAs-GaAs-GaSb heterostructures by Low-Loss Electron Energy Loss Spectroscopy}, journal = {18th Microscopy of Semiconducting Materials Conference (Msm Xviii)}, year = {2013}, author = {Beltran, A. M. and Ben, T. and Sanchez, A. M. and Gass, M. H. and Taboada, A. G. and Ripalda, J. M. and Molina, S. I. and IOP and Walther, T and Hutchison, JL}, volume = {471} }
DOI10.1088/1742-6596/471/1/012012
Coautoría
Beltran, A. M.
Compositional analysis of InAs-GaAs-GaSb heterostructures by low-loss electron energy loss spectroscopy
Journal of Physics: Conference Series
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2013
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-84890625059&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina2013,title = {Compositional analysis of InAs-GaAs-GaSb heterostructures by low-loss electron energy loss spectroscopy},journal = {Journal of Physics: Conference Series},year = {2013},volume = {471},number = {1},author = {Beltrán, A.M. and Ben, T. and Sánchez, A.M. and Gass, M.H. and Taboada, A.G. and Ripalda, J.M. and Molina, S.I.}}
DOI10.1088/1742-6596/471/1/012012
Coautoría
Beltrán, A.M.
Extreme voltage recovery in GaAs:Ti intermediate band solar cells
Solar Energy Materials and Solar Cells
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2013
Citación (BIBTEX): @article{RID:0116150735901-1131, title = {Extreme voltage recovery in GaAs:Ti intermediate band solar cells}, journal = {Solar Energy Materials and Solar Cells}, year = {2013}, author = {Linares, P. G. and Marti, A. and Antolin, E. and Ramiro, I. and Lopez, E. and Hernandez, E. and Fuertes Marron, D. and Artacho, I. and Tobias, I. and Gerard, P. and Chaix, C. and Campion, R. P. and Foxon, C. T. and Stanley, C. R. and Molina, S. I. and Luque, A.}, volume = {108}, pages = {175-179} }
DOI10.1016/j.solmat.2012.09.028
Coautoría
Linares, P. G.
Extreme voltage recovery in GaAs:Ti intermediate band solar cells
Solar Energy Materials and Solar Cells
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2013
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-84867606657&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina2013,title = {Extreme voltage recovery in GaAs:Ti intermediate band solar cells},journal = {Solar Energy Materials and Solar Cells},year = {2013},volume = {108},pages = {175-179},author = {Linares, P.G. and Martí, A. and Antolín, E. and Ramiro, I. and López, E. and Hernández, E. and Fuertes Marrón, D. and Artacho, I. and Tobías, I. and Gérard, P. and Chaix, C. and Campion, R.P. and Foxon, C.T. and Stanley, C.R. and Molina, S.I. and Luque, A.}}
DOI10.1016/j.solmat.2012.09.028
Coautoría
Linares, P.G.
High spatial resolution mapping of surface plasmon resonance modes in single and aggregated gold nanoparticles assembled on DNA strands
Nanoscale Research Letters
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2013
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-84898061506&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina2013,title = {High spatial resolution mapping of surface plasmon resonance modes in single and aggregated gold nanoparticles assembled on DNA strands},journal = {Nanoscale Research Letters},year = {2013},volume = {8},number = {1},pages = {1-8},author = {Diaz-Egea, C. and Sigle, W. and van Aken, P.A. and Molina, S.I.}}
DOI10.1186/1556-276X-8-337
Coautoría
Diaz-Egea, C.
Influence of RF-sputtering power on formation of vertically stacked Si 1-xGex nanocrystals between ultra-thin amorphous Al 2O3 layers: Structural and photoluminescence properties
Journal of Physics D: Applied Physics
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2013
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-84885099900&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina2013,title = {Influence of RF-sputtering power on formation of vertically stacked Si 1-xGex nanocrystals between ultra-thin amorphous Al 2O3 layers: Structural and photoluminescence properties},journal = {Journal of Physics D: Applied Physics},year = {2013},volume = {46},number = {38},author = {Vieira, E.M.F. and Martín-Sánchez, J. and Roldan, M.A. and Varela, M. and Buljan, M. and Bernstorff, S. and Barradas, N.P. and Franco, N. and Correia, M.R. and Rolo, A.G. and Pennycook, S.J. and Molina, S.I. and Alves, E. and Chahboun, A. and Gomes, M.J.M.}}
DOI10.1088/0022-3727/46/38/385301
Coautoría
Vieira, E.M.F.
Influence of RF-sputtering power on formation of vertically stacked Si1-xGex nanocrystals between ultra-thin amorphous Al2O3 layers: structural and photoluminescence properties
Journal of Physics D-Applied Physics
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2013
Citación (BIBTEX): @article{RID:0116150735901-1129, title = {Influence of RF-sputtering power on formation of vertically stacked Si1-xGex nanocrystals between ultra-thin amorphous Al2O3 layers: structural and photoluminescence properties}, journal = {Journal of Physics D-Applied Physics}, year = {2013}, author = {Vieira, E. M. F. and Martin-Sanchez, J. and Roldan, M. A. and Varela, M. and Buljan, M. and Bernstorff, S. and Barradas, N. P. and Franco, N. and Correia, M. R. and Rolo, A. G. and Pennycook, S. J. and Molina, S. I. and Alves, E. and Chahboun, A. and Gomes, M. J. M.}, volume = {46}, number = {38} }
DOI10.1088/0022-3727/46/38/385301
Coautoría
Vieira, E. M. F.
Strain analysis for the prediction of the preferential nucleation sites of stacked quantum dots by combination of FEM and APT
Nanoscale Research Letters
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2013
Citación (BIBTEX): @article{RID:0116150735902-1128, title = {Strain analysis for the prediction of the preferential nucleation sites of stacked quantum dots by combination of FEM and APT}, journal = {Nanoscale Research Letters}, year = {2013}, author = {Hernandez-Saz, Jesus and Herrera, Miriam and Duguay, Sebastien and Molina, Sergio I.}, volume = {8} }
DOI10.1186/1556-276x-8-513
Coautoría
Hernandez-Saz, Jesus
Strain analysis for the prediction of the preferential nucleation sites of stacked quantum dots by combination of FEM and APT
Nanoscale Research Letters
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2013
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-84891391074&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina2013,title = {Strain analysis for the prediction of the preferential nucleation sites of stacked quantum dots by combination of FEM and APT},journal = {Nanoscale Research Letters},year = {2013},volume = {8},number = {1},pages = {1-7},author = {Hernández-Saz, J. and Herrera, M. and Duguay, S. and Molina, S.I.}}
DOI10.1186/1556-276X-8-513
Coautoría
Hernández-Saz, J.
Towards High Efficiency Multi-Junction Solar Cells Grown on InP Substrates
2013 Ieee 39th Photovoltaic Specialists Conference (Pvsc)
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2013
Citación (BIBTEX): @article{RID:0116150735902-1130, title = {Towards High Efficiency Multi-Junction Solar Cells Grown on InP Substrates}, journal = {2013 Ieee 39th Photovoltaic Specialists Conference (Pvsc)}, year = {2013}, author = {Gonzalez, M. and Lumb, M. P. and Yakes, M. K. and Bailey, C. G. and Tischler, J. G. and Hoheisel, R. and Abell, J. and Vurgaftman, I. and Meyer, J. and Maximenko, S. and Jenkins, P. P. and Molina, S. I. and Delgado-Gonzalez, F. J. and Bahena, D. and Ponce, A. and Adams, J. G. J. and Fuhrer, M. and Ekins-Daukes, N. and Walters, R. J. and Ieee,}, pages = {145-148} }
Coautoría
Gonzalez, M.
Towards high efficiency multi-junction solar cells grown on InP Substrates
Conference Record of the IEEE Photovoltaic Specialists Conference
Tipo de Publicación: CONFERENCE_PAPER
Fecha: 2013
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-84896466261&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina2013,title = {Towards high efficiency multi-junction solar cells grown on InP Substrates},journal = {Conference Record of the IEEE Photovoltaic Specialists Conference},year = {2013},pages = {145-148},author = {Gonzalez, M. and Lumb, M.P. and Yakes, M.K. and Bailey, C.G. and Tischler, J.G. and Hoheisel, R. and Abell, J. and Vurgaftman, I. and Meyer, J. and Maximenko, S. and Jenkins, P.P. and Molina, S.I. and Delgado-Gonzalez, F.J. and Bahena, D. and Ponce, A. and Adams, J.G.J. and Fuhrer, M. and Ekins-Daukes, N. and Walters, R.J.}}
DOI10.1109/PVSC.2013.6744116
Coautoría
Gonzalez, M.
A methodology for the fabrication by FIB of needle-shape specimens around sub-surface features at the nanometre scale
Micron
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2012
Citación (BIBTEX): @article{RID:0116150735902-1137, title = {A methodology for the fabrication by FIB of needle-shape specimens around sub-surface features at the nanometre scale}, journal = {Micron}, year = {2012}, author = {Hernandez-Saz, Jesus and Herrera, Miriam and Molina, Sergio I.}, volume = {43}, number = {5}, pages = {643-650} }
DOI10.1016/j.micron.2011.11.011
Coautoría
Hernandez-Saz, Jesus
A methodology for the fabrication by FIB of needle-shape specimens around sub-surface features at the nanometre scale
Micron
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2012
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-84858154278&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina2012,title = {A methodology for the fabrication by FIB of needle-shape specimens around sub-surface features at the nanometre scale},journal = {Micron},year = {2012},volume = {43},number = {5},pages = {643-650},author = {Hernández-Saz, J. and Herrera, M. and Molina, S.I.}}
DOI10.1016/j.micron.2011.11.011
Coautoría
Hernández-Saz, J.
Analysis of the 3D distribution of stacked self-assembled quantum dots by electron tomography
Nanoscale Research Letters
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2012
Citación (BIBTEX): @article{RID:0116150735902-1132, title = {Analysis of the 3D distribution of stacked self-assembled quantum dots by electron tomography}, journal = {Nanoscale Research Letters}, year = {2012}, author = {Hernandez-Saz, Jesus and Herrera, Miriam and Alonso-Alvarez, Diego and Molina, Sergio I.}, volume = {7} }
DOI10.1186/1556-276x-7-681
Coautoría
Hernandez-Saz, Jesus
Analysis of the 3D distribution of stacked selfassembled quantum dots by electron tomography
Nanoscale Research Letters
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2012
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-84875330223&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina2012,title = {Analysis of the 3D distribution of stacked selfassembled quantum dots by electron tomography},journal = {Nanoscale Research Letters},year = {2012},volume = {7},number = {1},pages = {1-6},author = {Hernández-Saz, J. and Herrera, M. and Alonso-Álvarez, D. and Molina, S.I.}}
DOI10.1186/1556-276X-7-681
Coautoría
Hernández-Saz, J.
Cubic and hexagonal InGaAsN dilute arsenides by unintentional homogeneous incorporation of As into InGaN
Scripta Materialia
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2012
Citación (BIBTEX): @article{RID:0116150735902-1115, title = {Cubic and hexagonal InGaAsN dilute arsenides by unintentional homogeneous incorporation of As into InGaN}, journal = {Scripta Materialia}, year = {2012}, author = {Morales, F. M. and Carvalho, D. and Ben, T. and Garcia, R. and Molina, S. I. and Marti, A. and Luque, A. and Staddon, C. R. and Campion, R. P. and Foxon, C. T.}, volume = {66}, number = {6}, pages = {351-354} }
DOI10.1016/j.scriptamat.2011.11.025
Coautoría
Morales, F. M.
Cubic and hexagonal InGaAsN dilute arsenides by unintentional homogeneous incorporation of As into InGaN
Scripta Materialia
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2012
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-84855865656&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina2012,title = {Cubic and hexagonal InGaAsN dilute arsenides by unintentional homogeneous incorporation of As into InGaN},journal = {Scripta Materialia},year = {2012},volume = {66},number = {6},pages = {351-354},author = {Morales, F.M. and Carvalho, D. and Ben, T. and García, R. and Molina, S.I. and Martí, A. and Luque, A. and Staddon, C.R. and Campion, R.P. and Foxon, C.T.}}
DOI10.1016/j.scriptamat.2011.11.025
Coautoría
Morales, F.M.
InAs/AlGaAs quantum dot intermediate band solar cells with enlarged sub-bandgaps
Conference Record of the IEEE Photovoltaic Specialists Conference
Tipo de Publicación: CONFERENCE_PAPER
Fecha: 2012
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-84869398331&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina2012,title = {InAs/AlGaAs quantum dot intermediate band solar cells with enlarged sub-bandgaps},journal = {Conference Record of the IEEE Photovoltaic Specialists Conference},year = {2012},pages = {652-656},author = {Ramiro, I. and Antolín, E. and Steer, M.J. and Linares, P.G. and Hernández, E. and Artacho, I. and López, E. and Ben, T. and Ripalda, J.M. and Molina, S.I. and Briones, F. and Stanley, C.R. and Martí, A. and Luque, A.}}
DOI10.1109/PVSC.2012.6317694
Coautoría
Ramiro, I.
Initial Results from a 200 kV UltraSTEM
Microscopy and Microanalysis
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2012
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-85008543395&partnerID=MN8TOARS
Citación (BIBTEX): @article{Molina2012,title = {Initial Results from a 200 kV UltraSTEM},journal = {Microscopy and Microanalysis},year = {2012},volume = {18},number = {S2},pages = {326-327},author = {Lupini, A.R. and Hernandez-Maldonado, D. and Molina, S.I. and Pennycook, S.J.}}
DOI10.1017/S1431927612003480
Coautoría
Lupini, A.R.
Investigation of saturation and excitation behavior of 1.5 mu m emission from Er3+ ions in SiO2 sensitized with Si nanocrystals
Physica Status Solidi C: Current Topics in Solid State Physics, Vol 9, No 12
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2012
Citación (BIBTEX): @article{RID:0116150735903-1139, title = {Investigation of saturation and excitation behavior of 1.5 mu m emission from Er3+ ions in SiO2 sensitized with Si nanocrystals}, journal = {Physica Status Solidi C: Current Topics in Solid State Physics, Vol 9, No 12}, year = {2012}, author = {Timmerman, D. and Saeed, S. and Gregorkiewicz, T. and Roldan Gutierrez, M. A. and Molina, S. I.}, volume = {9}, number = {12}, pages = {2312-2317} }
DOI10.1002/pssc.201200311
Coautoría
Timmerman, D.
Investigation of saturation and excitation behavior of 1.5 μm emission from Er3+ ions in SiO2 sensitized with Si nanocrystals
Physica Status Solidi (C) Current Topics in Solid State Physics
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2012
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-84871394137&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina2012,title = {Investigation of saturation and excitation behavior of 1.5 μm emission from Er3+ ions in SiO2 sensitized with Si nanocrystals},journal = {Physica Status Solidi (C) Current Topics in Solid State Physics},year = {2012},volume = {9},number = {12},pages = {2312-2317},author = {Timmerman, D. and Saeed, S. and Gregorkiewicz, T. and Roldán Gutiérrez, M.A. and Molina, S.I.}}
DOI10.1002/pssc.201200311
Coautoría
Timmerman, D.
Photoluminescence Excitation Spectroscopy of Si Nanocrystals in SiO2
Nanoscale Luminescent Materials 2
Tipo de Publicación: BOOK_CHAPTER
Fecha: 2012
Citación (BIBTEX): @inbook{RID:0116150735903-1138, title = {Photoluminescence Excitation Spectroscopy of Si Nanocrystals in SiO2}, chapter = {}, pages = {3-8}, publisher = {}, year = {2012}, author = {de Boer, W. D. A. M. and Timmerman, D. and Roldan Gutierrez, M. A. and Molina, S. I. and Gregorkiewicz, T.}, editor = {Lockwood, D. J. and Mascher, P.}, booktitle = {Nanoscale Luminescent Materials 2}, series = {ECS Transactions}, volume = {45} }
DOI10.1149/1.3700404
Coautoría
de Boer, W. D. A. M.
Photoluminescence excitation spectroscopy of Si nanocrystals in SiO 2
ECS Transactions
Tipo de Publicación: CONFERENCE_PAPER
Fecha: 2012
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-84869044684&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina2012,title = {Photoluminescence excitation spectroscopy of Si nanocrystals in SiO 2},journal = {ECS Transactions},year = {2012},volume = {45},number = {5},pages = {3-8},author = {De Boer, W.D.A.M. and Timmerman, D. and Roldán Gutiérrez, M.A. and Molina, S.I. and Gregorkiewicz, T.}}
DOI10.1149/1.3700404
Coautoría
De Boer, W.D.A.M.
Production of Nanometer-Size GaAs Nanocristals by Nanosecond Laser Ablation in Liquid
Journal of Nanoscience and Nanotechnology
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2012
Citación (BIBTEX): @article{RID:0116150735903-1134, title = {Production of Nanometer-Size GaAs Nanocristals by Nanosecond Laser Ablation in Liquid}, journal = {Journal of Nanoscience and Nanotechnology}, year = {2012}, author = {Abderrafi, Kamal and Jimenez, Ernesto and Ben, Teresa and Molina, Sergio I. and Ibanez, Rafael and Chirvony, Vladimir and Martinez-Pastor, Juan P.}, volume = {12}, number = {8}, pages = {6774-6778} }
DOI10.1166/jnn.2012.4548
Coautoría
Abderrafi, Kamal
Production of nanometer-size gaas nanocristals by nanosecond laser ablation in liquid
Journal of Nanoscience and Nanotechnology
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2012
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-84865125095&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina2012,title = {Production of nanometer-size gaas nanocristals by nanosecond laser ablation in liquid},journal = {Journal of Nanoscience and Nanotechnology},year = {2012},volume = {12},number = {8},pages = {6774-6778},author = {Abderrafi, K. and Jiménez, E. and Ben, T. and Molina, S.I. and Ibáñez, R. and Chirvony, V. and Martínez-Pastor, J.P.}}
DOI10.1166/jnn.2012.4548
Coautoría
Abderrafi, K.
Quantification of corrugation in simulated graphene by electron tomography techniques
Applied Physics Letters
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2012
Citación (BIBTEX): @article{RID:0116150735903-1133, title = {Quantification of corrugation in simulated graphene by electron tomography techniques}, journal = {Applied Physics Letters}, year = {2012}, author = {Scavello, G. and Pizarro, J. and Maestre, J. F. and Molina, S. I. and Galindo, P. L.}, volume = {101}, number = {21} }
DOI10.1063/1.4768701
Coautoría
Scavello, G.
Quantification of corrugation in simulated graphene by electron tomography techniques
Applied Physics Letters
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2012
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-84869988563&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina2012,title = {Quantification of corrugation in simulated graphene by electron tomography techniques},journal = {Applied Physics Letters},year = {2012},volume = {101},number = {21},author = {Scavello, G. and Pizarro, J. and Maestre, J.F. and Molina, S.I. and Galindo, P.L.}}
DOI10.1063/1.4768701
Coautoría
Scavello, G.
Quantitative study of the interfacial intermixing and segregation effects across the wetting layer of Ga(As,Sb)-capped InAs quantum dots
Applied Physics Letters
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2012
Citación (BIBTEX): @article{RID:0116150735903-1135, title = {Quantitative study of the interfacial intermixing and segregation effects across the wetting layer of Ga(As,Sb)-capped InAs quantum dots}, journal = {Applied Physics Letters}, year = {2012}, author = {Luna, Esperanza and Beltran, Ana M. and Sanchez, Ana M. and Molina, Sergio I.}, volume = {101}, number = {1} }
DOI10.1063/1.4731790
Coautoría
Luna, Esperanza
Quantitative study of the interfacial intermixing and segregation effects across the wetting layer of Ga(As,Sb)-capped InAs quantum dots
Applied Physics Letters
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2012
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-84863706893&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina2012,title = {Quantitative study of the interfacial intermixing and segregation effects across the wetting layer of Ga(As,Sb)-capped InAs quantum dots},journal = {Applied Physics Letters},year = {2012},volume = {101},number = {1},author = {Luna, E. and Beltrán, A.M. and Sánchez, A.M. and Molina, S.I.}}
DOI10.1063/1.4731790
Coautoría
Luna, E.
Tuning the properties of Ge-quantum dots superlattices in amorphous silica matrix through deposition conditions
Journal of Applied Physics
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2012
Citación (BIBTEX): @article{RID:0116150735903-1136, title = {Tuning the properties of Ge-quantum dots superlattices in amorphous silica matrix through deposition conditions}, journal = {Journal of Applied Physics}, year = {2012}, author = {Pinto, S. R. C. and Buljan, M. and Chahboun, A. and Roldan, M. A. and Bernstorff, S. and Varela, M. and Pennycook, S. J. and Barradas, N. P. and Alves, E. and Molina, S. I. and Ramos, M. M. D. and Gomes, M. J. M.}, volume = {111}, number = {7} }
DOI10.1063/1.3702776
Coautoría
Pinto, S. R. C.
Tuning the properties of Ge-quantum dots superlattices in amorphous silica matrix through deposition conditions
Journal of Applied Physics
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2012
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-84861754430&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina2012,title = {Tuning the properties of Ge-quantum dots superlattices in amorphous silica matrix through deposition conditions},journal = {Journal of Applied Physics},year = {2012},volume = {111},number = {7},author = {Pinto, S.R.C. and Buljan, M. and Chahboun, A. and Roldan, M.A. and Bernstorff, S. and Varela, M. and Pennycook, S.J. and Barradas, N.P. and Alves, E. and Molina, S.I. and Ramos, M.M.D. and Gomes, M.J.M.}}
DOI10.1063/1.3702776
Coautoría
Pinto, S.R.C.
Aberration-corrected scanning transmission electron microscopy of nanostructures for photovoltaics
Conference Record of the IEEE Photovoltaic Specialists Conference
Tipo de Publicación: CONFERENCE_PAPER
Fecha: 2011
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-84861033795&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina2011,title = {Aberration-corrected scanning transmission electron microscopy of nanostructures for photovoltaics},journal = {Conference Record of the IEEE Photovoltaic Specialists Conference},year = {2011},pages = {003360-003365},author = {Molina, S.I.}}
DOI10.1109/PVSC.2011.6186668
Coautoría
Molina, S.I.
Calculation of integrated intensities in aberration-corrected Z-contrast images
Journal of Electron Microscopy
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2011
Citación (BIBTEX): @article{RID:0116150735903-1145, title = {Calculation of integrated intensities in aberration-corrected Z-contrast images}, journal = {Journal of Electron Microscopy}, year = {2011}, author = {Molina, Sergio I. and Guerrero, Maria P. and Galindo, Pedro L. and Sales, David L. and Varela, Maria and Pennycook, Stephen J.}, volume = {60}, number = {1}, pages = {29-33} }
DOI10.1093/jmicro/dfq078
Coautoría
Molina, Sergio I.
Calculation of integrated intensities in aberration-corrected Z-contrast images
Journal of Electron Microscopy
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2011
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-79951612689&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina2011,title = {Calculation of integrated intensities in aberration-corrected Z-contrast images},journal = {Journal of Electron Microscopy},year = {2011},volume = {60},number = {1},pages = {29-33},author = {Molina, S.I. and Guerrero, M.P. and Galindo, P.L. and Sales, D.L. and Varela, M. and Pennycook, S.J.}}
DOI10.1093/jmicro/dfq078
Coautoría
Molina, S.I.
Compositional Analysis with Atomic Column Spatial Resolution by 5th-Order Aberration-Corrected Scanning Transmission Electron Microscopy
Microscopy and Microanalysis
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2011
Citación (BIBTEX): @article{RID:0116150735904-1118, title = {Compositional Analysis with Atomic Column Spatial Resolution by 5th-Order Aberration-Corrected Scanning Transmission Electron Microscopy}, journal = {Microscopy and Microanalysis}, year = {2011}, author = {Hernandez-Maldonado, David and Herrera, Miriam and Alonso-Gonzalez, Pablo and Gonzalez, Yolanda and Gonzalez, Luisa and Gazquez, Jaume and Varela, Maria and Pennycook, Stephen J. and de la Paz Guerrero-Lebrero, Maria and Pizarro, Joaquin and Galindo, Pedro L. and Molina, Sergio I.}, volume = {17}, number = {4}, pages = {578-581} }
DOI10.1017/S1431927611000213
Coautoría
Hernandez-Maldonado, David
Compositional analysis with atomic column spatial resolution by 5th-order aberration-corrected scanning transmission electron microscopy
Microscopy and Microanalysis
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2011
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-80054883821&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina2011,title = {Compositional analysis with atomic column spatial resolution by 5th-order aberration-corrected scanning transmission electron microscopy},journal = {Microscopy and Microanalysis},year = {2011},volume = {17},number = {4},pages = {578-581},author = {Hernández-Maldonado, D. and Herrera, M. and Alonso-González, P. and González, Y. and González, L. and Gazquez, J. and Varela, M. and Pennycook, S.J. and Guerrero-Lebrero, M.D.L.P. and Pizarro, J. and Galindo, P.L. and Molina, S.I.}}
DOI10.1017/S1431927611000213
Coautoría
Hernández-Maldonado, D.
Distribution of bismuth atoms in epitaxial GaAsBi
Applied Physics Letters
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2011
Citación (BIBTEX): @article{RID:0116150735904-1144, title = {Distribution of bismuth atoms in epitaxial GaAsBi}, journal = {Applied Physics Letters}, year = {2011}, author = {Sales, D. L. and Guerrero, E. and Rodrigo, J. F. and Galindo, P. L. and Yanez, A. and Shafi, M. and Khatab, A. and Mari, R. H. and Henini, M. and Novikov, S. and Chisholm, M. F. and Molina, S. I.}, volume = {98}, number = {10} }
DOI10.1063/1.3562376
Coautoría
Sales, D. L.
Distribution of bismuth atoms in epitaxial GaAsBi
Applied Physics Letters
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2011
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-79952645546&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina2011,title = {Distribution of bismuth atoms in epitaxial GaAsBi},journal = {Applied Physics Letters},year = {2011},volume = {98},number = {10},author = {Sales, D.L. and Guerrero, E. and Rodrigo, J.F. and Galindo, P.L. and Yáez, A. and Shafi, M. and Khatab, A. and Mari, R.H. and Henini, M. and Novikov, S. and Chisholm, M.F. and Molina, S.I.}}
DOI10.1063/1.3562376
Coautoría
Sales, D.L.
Formation and Emission Properties of Single InGaAs/GaAs Quantum Dots and Pairs Grown by Droplet Epitaxy
Physics of Semiconductors: 30th International Conference on the Physics of Semiconductors
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2011
Citación (BIBTEX): @article{RID:0116150735904-1121, title = {Formation and Emission Properties of Single InGaAs/GaAs Quantum Dots and Pairs Grown by Droplet Epitaxy}, journal = {Physics of Semiconductors: 30th International Conference on the Physics of Semiconductors}, year = {2011}, author = {Alen, B. and Fuster, D. and Munoz-Matutano, G. and Alonso-Gonzalez, P. and Canet-Ferrer, J. and Martinez-Pastor, J. and Fernandez-Martinez, I. and Royo, M. and Climente, J. I. and Gonzalez, Y. and Briones, F. and Hernandez, D. and Molina, S. I. and Gonzalez, L. and Ihm, J and Cheong, H}, volume = {1399} }
DOI10.1063/1.3666433
Coautoría
Alen, B.
Formation and emission properties of single InGaAs/GaAs quantum dots and pairs grown by droplet epitaxy
AIP Conference Proceedings
Tipo de Publicación: CONFERENCE_PAPER
Fecha: 2011
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-84855488546&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina2011,title = {Formation and emission properties of single InGaAs/GaAs quantum dots and pairs grown by droplet epitaxy},journal = {AIP Conference Proceedings},year = {2011},volume = {1399},pages = {421-422},author = {Alén, B. and Fuster, D. and Muñoz-Matutano, G. and Alonso-González, P. and Canet-Ferrer, J. and Martínez-Pastor, J. and Fernández-Martínez, I. and Royo, M. and Climente, J.I. and González, Y. and Briones, F. and Hernández, D. and Molina, S.I. and González, L.}}
DOI10.1063/1.3666433
Coautoría
Alén, B.
Light Emission from Nanocrystalline Si Inverse Opals and Controlled Passivation by Atomic Layer Deposited Al2O3
Advanced Materials
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2011
Citación (BIBTEX): @article{RID:0116150735904-1140, title = {Light Emission from Nanocrystalline Si Inverse Opals and Controlled Passivation by Atomic Layer Deposited Al2O3}, journal = {Advanced Materials}, year = {2011}, author = {Gallego-Gomez, Francisco and Ibisate, Marta and Golmayo, Dolores and Palomares, F. Javier and Herrera, Miriam and Hernandez, Jesus and Molina, Sergio I. and Blanco, Alvaro and Lopez, Cefe}, volume = {23}, number = {44}, pages = {5219-5223} }
DOI10.1002/adma.201101797
Coautoría
Gallego-Gomez, Francisco
Light emission from nanocrystalline Si inverse opals and controlled passivation by atomic layer deposited Al 2O 3
Advanced Materials
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2011
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-81555200987&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina2011,title = {Light emission from nanocrystalline Si inverse opals and controlled passivation by atomic layer deposited Al 2O 3},journal = {Advanced Materials},year = {2011},volume = {23},number = {44},pages = {5219-5223},author = {Gallego-Gómez, F. and Ibisate, M. and Golmayo, D. and Palomares, F.J. and Herrera, M. and Hernández, J. and Molina, S.I. and Blanco, A. and López, C.}}
DOI10.1002/adma.201101797
Coautoría
Gallego-Gómez, F.
Novel Method of Preparation of Gold-Nanoparticle-Doped TiO2 and SiO2 Plasmonic Thin Films: Optical Characterization and Comparison with Maxwell-Garnett Modeling
Advanced Functional Materials
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2011
Citación (BIBTEX): @article{RID:0116150735904-1141, title = {Novel Method of Preparation of Gold-Nanoparticle-Doped TiO2 and SiO2 Plasmonic Thin Films: Optical Characterization and Comparison with Maxwell-Garnett Modeling}, journal = {Advanced Functional Materials}, year = {2011}, author = {Pedrueza, Esteban and Valdes, Jose L. and Chirvony, Vladimir and Abargues, Rafael and Hernandez-Saz, Jesus and Herrera, Miriam and Molina, Sergio I. and Martinez-Pastor, Juan P.}, volume = {21}, number = {18}, pages = {3502-3507} }
DOI10.1002/adfm.201101020
Coautoría
Pedrueza, Esteban
Novel method of preparation of gold-nanoparticle-doped TiO2 and SiO2 plasmonic thin films: Optical characterization and comparison with Maxwell-Garnett modeling
Advanced Functional Materials
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2011
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-80052994510&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina2011,title = {Novel method of preparation of gold-nanoparticle-doped TiO2 and SiO2 plasmonic thin films: Optical characterization and comparison with Maxwell-Garnett modeling},journal = {Advanced Functional Materials},year = {2011},volume = {21},number = {18},pages = {3502-3507},author = {Pedrueza, E. and Valdés, J.L. and Chirvony, V. and Abargues, R. and Hernández-Saz, J. and Herrera, M. and Molina, S.I. and Martínez-Pastor, J.P.}}
DOI10.1002/adfm.201101020
Coautoría
Pedrueza, E.
Seeing inside materials by aberration-corrected electron microscopy
International Journal of Nanotechnology
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2011
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-84857201880&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina2011,title = {Seeing inside materials by aberration-corrected electron microscopy},journal = {International Journal of Nanotechnology},year = {2011},volume = {8},number = {10-12},pages = {935-947},author = {Pennycook, S.J. and Van Benthem, K. and Marinopoulos, A.G. and Oh, S.-H. and Molina, S.I. and Borisevich, A.Y. and Luo, W. and Pantelides, S.T.}}
DOI10.1504/IJNT.2011.044438
Coautoría
Pennycook, S.J.
Strain balanced quantum posts
Applied Physics Letters
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2011
Citación (BIBTEX): @article{RID:0116150735905-1120, title = {Strain balanced quantum posts}, journal = {Applied Physics Letters}, year = {2011}, author = {Alonso-Alvarez, D. and Alen, B. and Ripalda, J. M. and Llorens, J. M. and Taboada, A. G. and Briones, F. and Roldan, M. A. and Hernandez-Saz, J. and Hernandez-Maldonado, D. and Herrera, M. and Molina, S. I.}, volume = {98}, number = {17} }
DOI10.1063/1.3583455
Coautoría
Alonso-Alvarez, D.
Strain balanced quantum posts
Applied Physics Letters
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2011
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-79955678507&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina2011,title = {Strain balanced quantum posts},journal = {Applied Physics Letters},year = {2011},volume = {98},number = {17},author = {Alonso-Álvarez, D. and Aĺn, B. and Ripalda, J.M. and Llorens, J.M. and Taboada, A.G. and Briones, F. and Roldán, M.A. and Hernández-Saz, J. and Hernández-Maldonado, D. and Herrera, M. and Molina, S.I.}}
DOI10.1063/1.3583455
Coautoría
Alonso-Álvarez, D.
Structural Origin of Enhanced Luminescence Efficiency of Antimony Irradiated InAs Quantum Dots
Advanced Science Letters
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2011
Citación (BIBTEX): @article{RID:0116150735905-1117, title = {Structural Origin of Enhanced Luminescence Efficiency of Antimony Irradiated InAs Quantum Dots}, journal = {Advanced Science Letters}, year = {2011}, author = {Beltran, Ana M. and Ben, Teresa and Sales, David L. and Sanchez, Ana M. and Ripalda, Jose M. and Taboada, Alfonso G. and Varela, Maria and Pennycook, Stephen J. and Molina, Sergio I.}, volume = {4}, number = {11-12}, pages = {3776-3778} }
DOI10.1166/asl.2011.1873
Coautoría
Beltran, Ana M.
Structural characterization of GaSb-capped InAs/GaAs quantum dots with a GaAs intermediate layer
Materials Letters
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2011
Citación (BIBTEX): @article{RID:0116150735905-1119, title = {Structural characterization of GaSb-capped InAs/GaAs quantum dots with a GaAs intermediate layer}, journal = {Materials Letters}, year = {2011}, author = {Beltran, A. M. and Ben, T. and Sanchez, A. M. and Ripalda, J. M. and Taboada, A. G. and Molina, S. I.}, volume = {65}, number = {11}, pages = {1608-1610} }
DOI10.1016/j.matlet.2011.02.086
Coautoría
Beltran, A. M.
Structural characterization of GaSb-capped InAs/GaAs quantum dots with a GaAs intermediate layer
Materials Letters
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2011
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-79953232756&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina2011,title = {Structural characterization of GaSb-capped InAs/GaAs quantum dots with a GaAs intermediate layer},journal = {Materials Letters},year = {2011},volume = {65},number = {11},pages = {1608-1610},author = {Beltran, A.M. and Ben, T. and Sanchez, A.M. and Ripalda, J.M. and Taboada, A.G. and Molina, S.I.}}
DOI10.1016/j.matlet.2011.02.086
Coautoría
Beltran, A.M.
Structural origin of enhanced luminescence efficiency of antimony irradiated InAs quantum dots
Advanced Science Letters
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2011
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-84856741424&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina2011,title = {Structural origin of enhanced luminescence efficiency of antimony irradiated InAs quantum dots},journal = {Advanced Science Letters},year = {2011},volume = {4},number = {11-12},pages = {3776-3778},author = {Beltran, A.M. and Ben, T. and Sales, D.L. and Sanchez, A.M. and Ripalda, J.M. and Taboada, A.G. and Varela, M. and Pennycook, S.J. and Molina, S.I.}}
DOI10.1166/asl.2011.1873
Coautoría
Beltran, A.M.
Three dimensional atom probe imaging of GaAsSb quantum rings
Ultramicroscopy
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2011
Citación (BIBTEX): @article{RID:0116150735905-1142, title = {Three dimensional atom probe imaging of GaAsSb quantum rings}, journal = {Ultramicroscopy}, year = {2011}, author = {Beltran, A. M. and Marquis, E. A. and Taboada, A. G. and Ripalda, J. M. and Garcia, J. M. and Molina, S. I.}, volume = {111}, number = {8}, pages = {1073-1076} }
DOI10.1016/j.ultramic.2011.03.018
Coautoría
Beltran, A. M.
Three dimensional atom probe imaging of GaAsSb quantum rings
Ultramicroscopy
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2011
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-79959977686&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina2011,title = {Three dimensional atom probe imaging of GaAsSb quantum rings},journal = {Ultramicroscopy},year = {2011},volume = {111},number = {8},pages = {1073-1076},author = {Beltrán, A.M. and Marquis, E.A. and Taboada, A.G. and Ripalda, J.M. and García, J.M. and Molina, S.I.}}
DOI10.1016/j.ultramic.2011.03.018
Coautoría
Beltrán, A.M.
Tuning the properties of exciton complexes in self-assembled GaSb/GaAs quantum rings
Physical Review B
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2011
Citación (BIBTEX): @article{RID:0116150735905-1143, title = {Tuning the properties of exciton complexes in self-assembled GaSb/GaAs quantum rings}, journal = {Physical Review B}, year = {2011}, author = {Kamarudin, M. Ahmad and Hayne, M. and Young, R. J. and Zhuang, Q. D. and Ben, T. and Molina, S. I.}, volume = {83}, number = {11} }
DOI10.1103/PhysRevB.83.115311
Coautoría
Kamarudin, M. Ahmad
Tuning the properties of exciton complexes in self-assembled GaSb/GaAs quantum rings
Physical Review B - Condensed Matter and Materials Physics
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2011
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-79961039613&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina2011,title = {Tuning the properties of exciton complexes in self-assembled GaSb/GaAs quantum rings},journal = {Physical Review B - Condensed Matter and Materials Physics},year = {2011},volume = {83},number = {11},author = {Ahmad Kamarudin, M. and Hayne, M. and Young, R.J. and Zhuang, Q.D. and Ben, T. and Molina, S.I.}}
DOI10.1103/PhysRevB.83.115311
Coautoría
Ahmad Kamarudin, M.
Blocking of indium incorporation by antimony in III-V-Sb nanostructures
Nanotechnology
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2010
Citación (BIBTEX): @article{RID:0116150735905-247, title = {Blocking of indium incorporation by antimony in III-V-Sb nanostructures}, journal = {Nanotechnology}, year = {2010}, author = {Sanchez, AM and Beltran, AM and Beanland, R and Ben, T and Gass, MH and de la Pena, F and Walls, M and Taboada, AG and Ripalda, JM and Molina, SI}, volume = {21}, number = {14} }
DOI10.1088/0957-4484/21/14/145606
Coautoría
Sanchez, AM
Blocking of indium incorporation by antimony in III-V-Sb nanostructures
Nanotechnology
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2010
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-77949544592&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina2010,title = {Blocking of indium incorporation by antimony in III-V-Sb nanostructures},journal = {Nanotechnology},year = {2010},volume = {21},number = {14},author = {Sanchez, A.M. and Beltran, A.M. and Beanland, R. and Ben, T. and Gass, M.H. and De La Pẽa, F. and Walls, M. and Taboada, A.G. and Ripalda, J.M. and Molina, S.I.}}
DOI10.1088/0957-4484/21/14/145606
Coautoría
Sanchez, A.M.
Effect of annealing on the structural and optical properties of (3 1 1)B GaAsBi layers
Applied Surface Science
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2010
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-77953232000&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina2010,title = {Effect of annealing on the structural and optical properties of (3 1 1)B GaAsBi layers},journal = {Applied Surface Science},year = {2010},volume = {256},number = {18},pages = {5688-5690},author = {Rodrigo, J.F. and Sales, D.L. and Shafi, M. and Henini, M. and Turyanska, L. and Novikov, S. and Molina, S.I.}}
DOI10.1016/j.apsusc.2010.03.017
Coautoría
Rodrigo, J.F.
Effect of annealing on the structural and optical properties of (311)B GaAsBi layers
Applied Surface Science
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2010
Citación (BIBTEX): @article{RID:0116150735905-246, title = {Effect of annealing on the structural and optical properties of (311)B GaAsBi layers}, journal = {Applied Surface Science}, year = {2010}, author = {Rodrigo, JF and Sales, DL and Shafi, M and Henini, M and Turyanska, L and Novikov, S and Molina, SI}, volume = {256}, number = {18}, pages = {5688-5690} }
DOI10.1016/j.apsusc.2010.03.017
Coautoría
Rodrigo, JF
Erratum: Structural and optical changes induced by incorporation of antimony into InAs/GaAs(001) quantum dots (Physical Review B - Condensed Matter and Materials Physics (2010) 82 (235316))
Physical Review B - Condensed Matter and Materials Physics
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2010
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-78650862520&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina2010,title = {Erratum: Structural and optical changes induced by incorporation of antimony into InAs/GaAs(001) quantum dots (Physical Review B - Condensed Matter and Materials Physics (2010) 82 (235316))},journal = {Physical Review B - Condensed Matter and Materials Physics},year = {2010},volume = {82},number = {23},author = {Taboada, A.G. and Sánchez, A.M. and Beltrán, A.M. and Bozkurt, M. and Alonso-Álvarez, D. and Alén, B. and Rivera, A. and Ripalda, J.M. and Llorens, J.M. and Martín-Sánchez, J. and González, Y. and Ulloa, J.M. and García, J.M. and Molina, S.I. and Koenraad, P.M.}}
DOI10.1103/PhysRevB.82.239904
Coautoría
Taboada, A.G.
Exploring semiconductor quantum dots and wires by high resolution electron microscopy
16th International Conference on Microscopy of Semiconducting Materials
Tipo de Publicación: BOOK
Fecha: 2010
Citación (BIBTEX): @book{RID:0116150735906-238, title = {Exploring semiconductor quantum dots and wires by high resolution electron microscopy}, publisher = {}, year = {2010}, author = {Molina, SI and Galindo, PL and Gonzalez, L and Ripalda, JM and Varela, M and Pennycook, SJ and Walther, T and Nellist, PD and Hutchison, JL and Cullis, AG}, editor = {}, volume = {209}, series = {16th International Conference on Microscopy of Semiconducting Materials} }
DOI10.1088/1742-6596/209/1/012004
Coautoría
Molina, SI
Exploring semiconductor quantum dots and wires by high resolution electron microscopy
Journal of Physics: Conference Series
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2010
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-77950483520&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina2010,title = {Exploring semiconductor quantum dots and wires by high resolution electron microscopy},journal = {Journal of Physics: Conference Series},year = {2010},volume = {209},author = {Molina, S.I. and Galindo, P.L. and Gonzalez, L. and Ripalda, J.M. and Varela, M. and Pennycook, S.J.}}
DOI10.1088/1742-6596/209/1/012004
Coautoría
Molina, S.I.
Growth of Low-Density Vertical Quantum Dot Molecules with Control in Energy Emission
Nanoscale Research Letters
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2010
Citación (BIBTEX): @article{RID:0116150735906-1124, title = {Growth of Low-Density Vertical Quantum Dot Molecules with Control in Energy Emission}, journal = {Nanoscale Research Letters}, year = {2010}, author = {Alonso-Gonzalez, P. and Gonzalez, L. and Martin-Sanchez, J. and Gonzalez, Y. and Fuster, D. and Sales, D. L. and Hernandez-Maldonado, D. and Herrera, M. and Molina, S. I.}, volume = {5}, number = {12}, pages = {1913-1916} }
DOI10.1007/s11671-010-9771-2
Coautoría
Alonso-Gonzalez, P.
Growth of Low-Density Vertical Quantum Dot Molecules with Control in Energy Emission
Nanoscale Research Letters
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2010
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-78649744946&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina2010,title = {Growth of Low-Density Vertical Quantum Dot Molecules with Control in Energy Emission},journal = {Nanoscale Research Letters},year = {2010},volume = {5},number = {12},pages = {1913-1916},author = {Alonso-González, P. and González, L. and Martín-Sánchez, J. and González, Y. and Fuster, D. and Sales, D.L. and Hernández-Maldonado, D. and Herrera, M. and Molina, S.I.}}
DOI10.1007/s11671-010-9771-2
Coautoría
Alonso-González, P.
In-x(GayAl1-y)(1-x)As quaternary alloys for quantum dot intermediate band solar cells
Proceedings of Inorganic and Nanostructured Photovoltaics
Tipo de Publicación: BOOK
Fecha: 2010
Citación (BIBTEX): @book{RID:0116150735906-242, title = {In-x(GayAl1-y)(1-x)As quaternary alloys for quantum dot intermediate band solar cells}, publisher = {}, year = {2010}, author = {Linares, PG and Farmer, CD and Antolin, E and Chakrabarti, S and Sanchez, AM and Ben, T and Molina, SI and Stanley, CR and Marti, A and Luque, A and Beaucarne, G and Conibeer, G and Mellikov, E and Schropp, R and Topic, M}, editor = {}, volume = {2}, number = {1}, series = {Proceedings of Inorganic and Nanostructured Photovoltaics}, pages = {133-141} }
DOI10.1016/j.egypro.2010.07.019
Coautoría
Linares, PG
Inx(GayAl1-y)1-xAs quaternary alloys for quantum dot intermediate band solar cells
Energy Procedia
Tipo de Publicación: CONFERENCE_PAPER
Fecha: 2010
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-77957792013&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina2010,title = {Inx(GayAl1-y)1-xAs quaternary alloys for quantum dot intermediate band solar cells},journal = {Energy Procedia},year = {2010},volume = {2},number = {1},pages = {133-141},author = {Linares, P.G. and Farmer, C.D. and Antoln, E. and Chakrabarti, S. and Snchez, A.M. and Ben, T. and Molina, S.I. and Stanley, C.R. and Mart, A. and Luque, A.}}
DOI10.1016/j.egypro.2010.07.019
Coautoría
Linares, P.G.
Lateral absorption measurements of InAs/GaAs quantum dots stacks: Potential as intermediate band material for high efficiency solar cells
Energy Procedia
Tipo de Publicación: CONFERENCE_PAPER
Fecha: 2010
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-77957768748&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina2010,title = {Lateral absorption measurements of InAs/GaAs quantum dots stacks: Potential as intermediate band material for high efficiency solar cells},journal = {Energy Procedia},year = {2010},volume = {2},number = {1},pages = {27-34},author = {Cnovas, E. and Mart, A. and Luque, A. and Farmer, C.D. and Stanley, C.R. and Snchez, A.M. and Ben, T. and Molina, S.I.}}
DOI10.1016/j.egypro.2010.07.006
Coautoría
Cnovas, E.
Lateral absorption measurements of InAs/GaAs quantum dots stacks: potential as intermediate band material for high efficiency solar cells
Proceedings of Inorganic and Nanostructured Photovoltaics
Tipo de Publicación: BOOK
Fecha: 2010
Citación (BIBTEX): @book{RID:0116150735906-241, title = {Lateral absorption measurements of InAs/GaAs quantum dots stacks: potential as intermediate band material for high efficiency solar cells}, publisher = {}, year = {2010}, author = {Canovas, E and Marti, A and Luque, A and Farmer, CD and Stanley, CR and Sanchez, AM and Ben, T and Molina, SI and Beaucarne, G and Conibeer, G and Mellikov, E and Schropp, R and Topic, M}, editor = {}, volume = {2}, number = {1}, series = {Proceedings of Inorganic and Nanostructured Photovoltaics}, pages = {27-34} }
DOI10.1016/j.egypro.2010.07.006
Coautoría
Canovas, E
Morphological evolution of InAs/InP quantum wires through aberration-corrected scanning transmission electron microscopy
Nanotechnology
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2010
Citación (BIBTEX): @article{RID:0116150735906-244, title = {Morphological evolution of InAs/InP quantum wires through aberration-corrected scanning transmission electron microscopy}, journal = {Nanotechnology}, year = {2010}, author = {Sales, DL and Varela, M and Pennycook, SJ and Galindo, PL and Gonzalez, L and Gonzalez, Y and Fuster, D and Molina, SI}, volume = {21}, number = {32} }
DOI10.1088/0957-4484/21/32/325706
Coautoría
Sales, DL
Morphological evolution of InAs/InP quantum wires through aberration-corrected scanning transmission electron microscopy
Nanotechnology
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2010
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-77957308104&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina2010,title = {Morphological evolution of InAs/InP quantum wires through aberration-corrected scanning transmission electron microscopy},journal = {Nanotechnology},year = {2010},volume = {21},number = {32},author = {Sales, D.L. and Varela, M. and Pennycook, S.J. and Galindo, P.L. and González, L. and González, Y. and Fuster, D. and Molina, S.I.}}
DOI10.1088/0957-4484/21/32/325706
Coautoría
Sales, D.L.
Reducing carrier escape in the InAs/GaAs quantum dot intermediate band solar cell
Journal of Applied Physics
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2010
Citación (BIBTEX): @article{RID:0116150735906-240, title = {Reducing carrier escape in the InAs/GaAs quantum dot intermediate band solar cell}, journal = {Journal of Applied Physics}, year = {2010}, author = {Antolin, E and Marti, A and Farmer, CD and Linares, PG and Hernandez, E and Sanchez, AM and Ben, T and Molina, SI and Stanley, CR and Luque, A}, volume = {108}, number = {6} }
DOI10.1063/1.3468520
Coautoría
Antolin, E
Reducing carrier escape in the InAs/GaAs quantum dot intermediate band solar cell
Journal of Applied Physics
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2010
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-77957736868&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina2010,title = {Reducing carrier escape in the InAs/GaAs quantum dot intermediate band solar cell},journal = {Journal of Applied Physics},year = {2010},volume = {108},number = {6},author = {Antolín, E. and Martí, A. and Farmer, C.D. and Linares, P.G. and Hernández, E. and Sánchez, A.M. and Ben, T. and Molina, S.I. and Stanley, C.R. and Luque, A.}}
DOI10.1063/1.3468520
Coautoría
Antolín, E.
SELENA - An open-source tool for seismic risk and loss assessment using a logic tree computation procedure
Computers and Geosciences
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2010
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-75749131365&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina2010,title = {SELENA - An open-source tool for seismic risk and loss assessment using a logic tree computation procedure},journal = {Computers and Geosciences},year = {2010},volume = {36},number = {3},pages = {257-269},author = {Molina, S. and Lang, D.H. and Lindholm, C.D.}}
DOI10.1016/j.cageo.2009.07.006
Coautoría
Molina, S.
Strain balanced quantum posts for intermediate band solar cells
Conference Record of the IEEE Photovoltaic Specialists Conference
Tipo de Publicación: CONFERENCE_PAPER
Fecha: 2010
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-78650135958&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina2010,title = {Strain balanced quantum posts for intermediate band solar cells},journal = {Conference Record of the IEEE Photovoltaic Specialists Conference},year = {2010},pages = {928-933},author = {Alonso-Álvarez, D. and Alén, B. and Ripalda, J.M. and Taboada, A.G. and Llorens, J.M. and González, Y. and González, L. and Briones, F. and Antolín, E. and Ramiro, I. and Martí, A. and Luque, A. and Roldán, M.A. and Hernandez-Saz, J. and Herrera, M. and Molina, S.I.}}
DOI10.1109/PVSC.2010.5614557
Coautoría
Alonso-Álvarez, D.
Structural and optical changes induced by incorporation of antimony into InAs/GaAs(001) quantum dots
Physical Review B
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2010
Citación (BIBTEX): @article{RID:0116150735907-1123, title = {Structural and optical changes induced by incorporation of antimony into InAs/GaAs(001) quantum dots}, journal = {Physical Review B}, year = {2010}, author = {Taboada, A. G. and Sanchez, A. M. and Beltran, A. M. and Bozkurt, M. and Alonso-Alvarez, D. and Alen, B. and Rivera, A. and Ripalda, J. M. and Llorens, J. M. and Martin-Sanchez, J. and Gonzalez, Y. and Ulloa, J. M. and Garcia, J. M. and Molina, S. I. and Koenraad, P. M.}, volume = {82}, number = {23} }
DOI10.1103/PhysRevB.82.235316
Coautoría
Taboada, A. G.
Structural and optical changes induced by incorporation of antimony into InAs/GaAs(001) quantum dots
Physical Review B - Condensed Matter and Materials Physics
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2010
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-78650870276&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina2010,title = {Structural and optical changes induced by incorporation of antimony into InAs/GaAs(001) quantum dots},journal = {Physical Review B - Condensed Matter and Materials Physics},year = {2010},volume = {82},number = {23},author = {Taboada, A.G. and Sánchez, A.M. and Beltrán, A.M. and Bozkurt, M. and Alonso-Álvarez, D. and Alén, B. and Rivera, A. and Ripalda, J.M. and Llorens, J.M. and Martín-Sánchez, J. and González, Y. and Ulloa, J.M. and García, J.M. and Molina, S.I. and Koenraad, P.M.}}
DOI10.1103/PhysRevB.82.235316
Coautoría
Taboada, A.G.
Structural and optical changes induced by incorporation of antimony into InAs/GaAs(001) quantum dots (vol 82, 235316, 2010)
Physical Review B
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2010
Citación (BIBTEX): @article{RID:0116150735907-1122, title = {Structural and optical changes induced by incorporation of antimony into InAs/GaAs(001) quantum dots (vol 82, 235316, 2010)}, journal = {Physical Review B}, year = {2010}, author = {Taboada, A. G. and Sanchez, A. M. and Beltran, A. M. and Bozkurt, M. and Alonso-Alvarez, D. and Alen, B. and Rivera, A. and Ripalda, J. M. and Llorens, J. M. and Martin-Sanchez, J. and Gonzalez, Y. and Ulloa, J. M. and Garcia, J. M. and Molina, S. I. and Koenraad, P. M.}, volume = {82}, number = {23} }
DOI10.1103/PhysRevB.82.239904
Coautoría
Taboada, A. G.
Surface nanostructuring of TiO2 thin films by high energy ion irradiation
Physical Review B
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2010
Citación (BIBTEX): @article{RID:0116150735907-243, title = {Surface nanostructuring of TiO2 thin films by high energy ion irradiation}, journal = {Physical Review B}, year = {2010}, author = {Romero-Gomez, P and Palmero, A and Ben, T and Lozano, JG and Molina, SI and Gonzalez-Elipe, AR}, volume = {82}, number = {11} }
DOI10.1103/PhysRevB.82.115420
Coautoría
Romero-Gomez, P
Surface nanostructuring of TiO2 thin films by high energy ion irradiation
Physical Review B - Condensed Matter and Materials Physics
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2010
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-77957711598&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina2010,title = {Surface nanostructuring of TiO2 thin films by high energy ion irradiation},journal = {Physical Review B - Condensed Matter and Materials Physics},year = {2010},volume = {82},number = {11},author = {Romero-Gomez, P. and Palmero, A. and Ben, T. and Lozano, J.G. and Molina, S.I. and González-Elipe, A.R.}}
DOI10.1103/PhysRevB.82.115420
Coautoría
Romero-Gomez, P.
Theoretical modelling of quaternary GaInAsSb/GaAs self-assembled quantum dots
Quantum Dots 2010
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2010
Citación (BIBTEX): @article{RID:0116150735907-1125, title = {Theoretical modelling of quaternary GaInAsSb/GaAs self-assembled quantum dots}, journal = {Quantum Dots 2010}, year = {2010}, author = {Llorens, J. M. and Taboada, A. G. and Ripalda, J. M. and Alonso-Alvarez, D. and Alen, B. and Martin-Sanchez, J. and Garcia, J. M. and Gonzalez, Y. and Sanchez, A. M. and Beltran, A. M. and Galindo, P. L. and Molina, S. I. and Taylor, RA}, volume = {245} }
DOI10.1088/1742-6596/245/1/012081
Coautoría
Llorens, J. M.
Theoretical modelling of quaternary GaInAsSb/GaAs self-assembled quantum dots
Journal of Physics: Conference Series
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2010
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-78651228025&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina2010,title = {Theoretical modelling of quaternary GaInAsSb/GaAs self-assembled quantum dots},journal = {Journal of Physics: Conference Series},year = {2010},volume = {244},author = {Llorens, J.M. and Taboada, A.G. and Ripalda, J.M. and Alonso-Álvarez, D. and Alén, B. and Martín-Sánchez, J. and García, J.M. and González, Y. and Sánchez, A.M. and Beltrán, A.M. and Galindo, P.L. and Molina, S.I.}}
DOI10.1088/1742-6596/245/1/012081
Coautoría
Llorens, J.M.
Through-Focal HAADF-STEM of buried nanostructures
16th International Conference on Microscopy of Semiconducting Materials
Tipo de Publicación: BOOK
Fecha: 2010
Citación (BIBTEX): @book{RID:0116150735907-239, title = {Through-Focal HAADF-STEM of buried nanostructures}, publisher = {}, year = {2010}, author = {Guerrero-Lebrero, MP and Pizarro, J and Guerrero, E and Galindo, PL and Yanez, A and Molina, SI and Walther, T and Nellist, PD and Hutchison, JL and Cullis, AG}, editor = {}, volume = {209}, series = {16th International Conference on Microscopy of Semiconducting Materials} }
DOI10.1088/1742-6596/209/1/012032
Coautoría
Guerrero-Lebrero, MP
Transmission electron microscopy study of vertical quantum dots molecules grown by droplet epitaxy
Applied Surface Science
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2010
Citación (BIBTEX): @article{RID:0116150735907-245, title = {Transmission electron microscopy study of vertical quantum dots molecules grown by droplet epitaxy}, journal = {Applied Surface Science}, year = {2010}, author = {Hernandez-Maldonado, D and Herrera, M and Sales, DL and Alonso-Gonzalez, P and Gonzalez, Y and Gonzalez, L and Pizarro, J and Galindo, PL and Molina, SI}, volume = {256}, number = {18}, pages = {5659-5661} }
DOI10.1016/j.apsusc.2010.03.024
Coautoría
Hernandez-Maldonado, D
Transmission electron microscopy study of vertical quantum dots molecules grown by droplet epitaxy
Applied Surface Science
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2010
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-77953324279&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina2010,title = {Transmission electron microscopy study of vertical quantum dots molecules grown by droplet epitaxy},journal = {Applied Surface Science},year = {2010},volume = {256},number = {18},pages = {5659-5661},author = {Hernández-Maldonado, D. and Herrera, M. and Sales, D.L. and Alonso-González, P. and González, Y. and González, L. and Pizarro, J. and Galindo, P.L. and Molina, S.I.}}
DOI10.1016/j.apsusc.2010.03.024
Coautoría
Hernández-Maldonado, D.
A comparison of ZnMgSSe and MgS wide bandgap semiconductors used as barriers: Growth, structure and luminescence properties
Journal of Crystal Growth
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2009
Citación (BIBTEX): @article{RID:0116150735908-252, title = {A comparison of ZnMgSSe and MgS wide bandgap semiconductors used as barriers: Growth, structure and luminescence properties}, journal = {Journal of Crystal Growth}, year = {2009}, author = {Moug, RT and Bradford, C and Izdebski, F and Davidson, I and Curran, A and Warburton, RJ and Prior, KA and Aouni, A and Morales, FM and Molina, SI}, volume = {311}, number = {7}, pages = {2099-2101} }
DOI10.1016/j.jcrysgro.2008.10.040
Coautoría
Moug, RT
A comparison of ZnMgSSe and MgS wide bandgap semiconductors used as barriers: Growth, structure and luminescence properties
Journal of Crystal Growth
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2009
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-63549129242&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina2009,title = {A comparison of ZnMgSSe and MgS wide bandgap semiconductors used as barriers: Growth, structure and luminescence properties},journal = {Journal of Crystal Growth},year = {2009},volume = {311},number = {7},pages = {2099-2101},author = {Moug, R.T. and Bradford, C. and Izdebski, F. and Davidson, I. and Curran, A. and Warburton, R.J. and Prior, K.A. and Aouni, A. and Morales, F.M. and Molina, S.I.}}
DOI10.1016/j.jcrysgro.2008.10.040
Coautoría
Moug, R.T.
Aberration-corrected scanning transmission electron microscopy: From atomic imaging and analysis to solving energy problems
Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2009
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-70349421051&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina2009,title = {Aberration-corrected scanning transmission electron microscopy: From atomic imaging and analysis to solving energy problems},journal = {Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences},year = {2009},volume = {367},number = {1903},pages = {3709-3733},author = {Pennycook, S.J. and Chisholm, M.F. and Lupini, A.R. and Varela, M. and Borisevich, A.Y. and Oxley, M.P. and Luo, W.D. and Benthem, K.V. and Oh, S.-H. and Sales, D.L. and Molina, S.I. and GarcíA-Barriocanal, J. and Leon, C. and SantamaríA, J. and Rashkeev, S.N. and Pantelides, S.T.}}
DOI10.1098/rsta.2009.0112
Coautoría
Pennycook, S.J.
Aberration-corrected scanning transmission electron microscopy: from atomic imaging and analysis to solving energy problems
Philosophical Transactions of the Royal Society a-Mathematical Physical and Engineering Sciences
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2009
Citación (BIBTEX): @article{RID:0116150735908-250, title = {Aberration-corrected scanning transmission electron microscopy: from atomic imaging and analysis to solving energy problems}, journal = {Philosophical Transactions of the Royal Society a-Mathematical Physical and Engineering Sciences}, year = {2009}, author = {Pennycook, SJ and Chisholm, MF and Lupini, AR and Varela, M and Borisevich, AY and Oxley, MP and Luo, WD and van Benthem, K and Oh, SH and Sales, DL and Molina, SI and Garcia-Barriocanal, J and Leon, C and Santamaria, J and Rashkeev, SN and Pantelides, ST}, volume = {367}, number = {1903}, pages = {3709-3733} }
DOI10.1098/rsta.2009.0112
Coautoría
Pennycook, SJ
Accuracy assessment of strain mapping from Z -contrast images of strained nanostructures
Applied Physics Letters
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2009
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-70349922931&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina2009,title = {Accuracy assessment of strain mapping from Z -contrast images of strained nanostructures},journal = {Applied Physics Letters},year = {2009},volume = {95},number = {14},author = {Guerrero, E. and Galindo, P.L. and Yán̈ez, A. and Pizarro, J. and Guerrero-Lebrero, M.P. and Molina, S.I.}}
DOI10.1063/1.3243990
Coautoría
Guerrero, E.
Accuracy assessment of strain mapping from Z-contrast images of strained nanostructures
Applied Physics Letters
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2009
Citación (BIBTEX): @article{RID:0116150735908-248, title = {Accuracy assessment of strain mapping from Z-contrast images of strained nanostructures}, journal = {Applied Physics Letters}, year = {2009}, author = {Guerrero, E and Galindo, PL and Yanez, A and Pizarro, J and Guerrero-Lebrero, MP and Molina, SI}, volume = {95}, number = {14} }
DOI10.1063/1.3243990
Coautoría
Guerrero, E
Carrier localization in GaBiAs probed by photomodulated transmittance and photoluminescence
Journal of Applied Physics
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2009
Citación (BIBTEX): @article{RID:0116150735908-251, title = {Carrier localization in GaBiAs probed by photomodulated transmittance and photoluminescence}, journal = {Journal of Applied Physics}, year = {2009}, author = {Kudrawiec, R and Syperek, M and Poloczek, P and Misiewicz, J and Mari, RH and Shafi, M and Henini, M and Gobato, YG and Novikov, SV and Ibanez, J and Schmidbauer, M and Molina, SI}, volume = {106}, number = {2} }
DOI10.1063/1.3168429
Coautoría
Kudrawiec, R
Carrier localization in GaBiAs probed by photomodulated transmittance and photoluminescence
Journal of Applied Physics
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2009
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-68249152254&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina2009,title = {Carrier localization in GaBiAs probed by photomodulated transmittance and photoluminescence},journal = {Journal of Applied Physics},year = {2009},volume = {106},number = {2},author = {Kudrawiec, R. and Syperek, M. and Poloczek, P. and Misiewicz, J. and Mari, R.H. and Shafi, M. and Henini, M. and Gobato, Y.G. and Novikov, S.V. and Ibáñez, J. and Schmidbauer, M. and Molina, S.I.}}
DOI10.1063/1.3168429
Coautoría
Kudrawiec, R.
Column-by-column compositional mapping by Z-contrast imaging
Ultramicroscopy
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2009
Citación (BIBTEX): @article{RID:0116150735908-257, title = {Column-by-column compositional mapping by Z-contrast imaging}, journal = {Ultramicroscopy}, year = {2009}, author = {Molina, SI and Sales, DL and Galindo, PL and Fuster, D and Gonzalez, Y and Alen, B and Gonzalez, L and Varela, M and Pennycook, SJ}, volume = {109}, number = {2}, pages = {172-176} }
DOI10.1016/j.ultramic.2008.10.008
Coautoría
Molina, SI
Column-by-column compositional mapping by Z-contrast imaging
Ultramicroscopy
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2009
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-57849100000&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina2009,title = {Column-by-column compositional mapping by Z-contrast imaging},journal = {Ultramicroscopy},year = {2009},volume = {109},number = {2},pages = {172-176},author = {Molina, S.I. and Sales, D.L. and Galindo, P.L. and Fuster, D. and González, Y. and Alén, B. and González, L. and Varela, M. and Pennycook, S.J.}}
DOI10.1016/j.ultramic.2008.10.008
Coautoría
Molina, S.I.
Column-by-column compositional mapping by Z-contrast imaging (vol 109, pg 172, 2009)
Ultramicroscopy
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2009
Citación (BIBTEX): @article{RID:0116150735908-249, title = {Column-by-column compositional mapping by Z-contrast imaging (vol 109, pg 172, 2009)}, journal = {Ultramicroscopy}, year = {2009}, author = {Molina, SI and Sales, DL and Galindo, PL and Fuster, D and Gonzalez, Y and Alen, B and Gonzalez, L and Varela, M and Pennycook, SJ}, volume = {109}, number = {10}, pages = {1315} }
DOI10.1016/j.ultramic.2009.06.008
Coautoría
Molina, SI
Erratum to: "Column-by-column compositional mapping by Z-contrast imaging" [Ultramicroscopy 109(2) (2009) 172-176] (DOI:10.1016/j.ultramic.2008.10.008)
Ultramicroscopy
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2009
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-68749093801&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina2009,title = {Erratum to: "Column-by-column compositional mapping by Z-contrast imaging" [Ultramicroscopy 109(2) (2009) 172-176] (DOI:10.1016/j.ultramic.2008.10.008)},journal = {Ultramicroscopy},year = {2009},volume = {109},number = {10},author = {Molina, S.I. and Sales, D.L. and Galindo, P.L. and Fuster, D. and González, Y. and Alén, B. and González, L. and Varela, M. and Pennycook, S.J.}}
DOI10.1016/j.ultramic.2009.06.008
Coautoría
Molina, S.I.
Formation of spatially addressed Ga(As)Sb quantum rings on GaAs(001) substrates by droplet epitaxy
Crystal Growth and Design
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2009
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-61749092018&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina2009,title = {Formation of spatially addressed Ga(As)Sb quantum rings on GaAs(001) substrates by droplet epitaxy},journal = {Crystal Growth and Design},year = {2009},volume = {9},number = {2},pages = {1216-1218},author = {Alonso-González, P. and González, L. and Fuster, D. and González, Y. and Taboada, A.G. and Ripalda, J.M. and Beltrán, A.M. and Sales, D.L. and Ben, T. and Molina, S.I.}}
EID2-s2.0-61749092018
Coautoría
Alonso-González, P.
High resolution electron microscopy of GaAs capped GaSb nanostructures
Applied Physics Letters
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2009
Citación (BIBTEX): @article{RID:0116150735909-255, title = {High resolution electron microscopy of GaAs capped GaSb nanostructures}, journal = {Applied Physics Letters}, year = {2009}, author = {Molina, SI and Beltran, AM and Ben, T and Galindo, PL and Guerrero, E and Taboada, AG and Ripalda, JM and Chisholm, MF}, volume = {94}, number = {4} }
DOI10.1063/1.3077009
Coautoría
Molina, SI
High resolution electron microscopy of GaAs capped GaSb nanostructures
Applied Physics Letters
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2009
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-59349104384&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina2009,title = {High resolution electron microscopy of GaAs capped GaSb nanostructures},journal = {Applied Physics Letters},year = {2009},volume = {94},number = {4},author = {Molina, S.I. and Beltrán, A.M. and Ben, T. and Galindo, P.L. and Guerrero, E. and Taboada, A.G. and Ripalda, J.M. and Chisholm, M.F.}}
DOI10.1063/1.3077009
Coautoría
Molina, S.I.
Microstructural improvements of InP on GaAs (001) grown by molecular beam epitaxy by in situ hydrogenation and postgrowth annealing
Applied Physics Letters
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2009
Citación (BIBTEX): @article{RID:0116150735909-254, title = {Microstructural improvements of InP on GaAs (001) grown by molecular beam epitaxy by in situ hydrogenation and postgrowth annealing}, journal = {Applied Physics Letters}, year = {2009}, author = {Morales, FM and Garcia, R and Molina, SI and Aouni, A and Postigo, PA and Fonstad, CG}, volume = {94}, number = {4} }
DOI10.1063/1.3077610
Coautoría
Morales, FM
Microstructural improvements of InP on GaAs (001) grown by molecular beam epitaxy by in situ hydrogenation and postgrowth annealing
Applied Physics Letters
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2009
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-59349102530&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina2009,title = {Microstructural improvements of InP on GaAs (001) grown by molecular beam epitaxy by in situ hydrogenation and postgrowth annealing},journal = {Applied Physics Letters},year = {2009},volume = {94},number = {4},author = {Morales, F.M. and García, R. and Molina, S.I. and Aouni, A. and Postigo, P.A. and Fonstad, C.G.}}
DOI10.1063/1.3077610
Coautoría
Morales, F.M.
Photomodulated transmittance of GaBiAs layers grown on (0 0 1) and (3 1 1)B GaAs substrates
Microelectronics Journal
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2009
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-61449169083&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina2009,title = {Photomodulated transmittance of GaBiAs layers grown on (0 0 1) and (3 1 1)B GaAs substrates},journal = {Microelectronics Journal},year = {2009},volume = {40},number = {3},pages = {537-539},author = {Kudrawiec, R. and Poloczek, P. and Misiewicz, J. and Shafi, M. and Ibáñez, J. and Mari, R.H. and Henini, M. and Schmidbauer, M. and Novikov, S.V. and Turyanska, L. and Molina, S.I. and Sales, D.L. and Chisholm, M.F.}}
DOI10.1016/j.mejo.2008.06.025
Coautoría
Kudrawiec, R.
Photomodulated transmittance of GaBiAs layers grown on (001) and (311)B GaAs substrates
Microelectronics Journal
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2009
Citación (BIBTEX): @article{RID:0116150735909-253, title = {Photomodulated transmittance of GaBiAs layers grown on (001) and (311)B GaAs substrates}, journal = {Microelectronics Journal}, year = {2009}, author = {Kudrawiec, R and Poloczek, P and Misiewicz, J and Shafi, M and Ibanez, J and Mari, RH and Henini, M and Schmidbauer, M and Novikov, SV and Turyanska, L and Molina, SI and Sales, DL and Chisholm, MF}, volume = {40}, number = {3}, pages = {537-539} }
DOI10.1016/j.mejo.2008.06.025
Coautoría
Kudrawiec, R
A Method to Determine the Strain and Nucleation Sites of Stacked Nano-Objects
Journal of Nanoscience and Nanotechnology
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2008
Citación (BIBTEX): @article{RID:0116150735909-259, title = {A Method to Determine the Strain and Nucleation Sites of Stacked Nano-Objects}, journal = {Journal of Nanoscience and Nanotechnology}, year = {2008}, author = {Molina, SI and Varela, M and Ben, T and Sales, DL and Pizarro, J and Galindo, PL and Fuster, D and Gonzalez, Y and Gonzalez, L and Pennycook, SJ}, volume = {8}, number = {7}, pages = {3422-3426} }
DOI10.1166/jnn.2008.123
Coautoría
Molina, SI
A method to determine the strain and nucleation sites of stacked nano-objects
Journal of Nanoscience and Nanotechnology
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2008
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-54149109849&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina2008,title = {A method to determine the strain and nucleation sites of stacked nano-objects},journal = {Journal of Nanoscience and Nanotechnology},year = {2008},volume = {8},number = {7},pages = {3422-3426},author = {Molina, S.I. and Varela, M. and Ben, T. and Sales, D.L. and Pizarro, J. and Galindo, P.L. and Fuster, D. and Gonzalez, Y. and Gonzalez, L. and Pennycook, S.J.}}
DOI10.1166/jnn.2008.123
Coautoría
Molina, S.I.
Aqueous Near-Infrared Fluorescent Composites Based on Apoferritin-Encapsulated PbS Quantum Dots
Advanced Materials
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2008
Citación (BIBTEX): @article{RID:0116150735909-260, title = {Aqueous Near-Infrared Fluorescent Composites Based on Apoferritin-Encapsulated PbS Quantum Dots}, journal = {Advanced Materials}, year = {2008}, author = {Hennequin, B and Turyanska, L and Ben, T and Beltran, AM and Molina, SI and Li, M and Mann, S and Patane, A and Thomas, NR}, volume = {20}, number = {19}, pages = {3592-+} }
DOI10.1002/adma.200800530
Coautoría
Hennequin, B
Aqueous near-infrared fluorescent composites based on apoferritin- encapsulated PbS quantum dots
Advanced Materials
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2008
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-54949122142&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina2008,title = {Aqueous near-infrared fluorescent composites based on apoferritin- encapsulated PbS quantum dots},journal = {Advanced Materials},year = {2008},volume = {20},number = {19},pages = {3592-3596},author = {Hennequin, B. and Turyanska, L. and Ben, T. and Beltrán, A.M. and Molina, S.I. and Li, M. and Mann, S. and Patanè, A. and Thomas, N.R.}}
DOI10.1002/adma.200800530
Coautoría
Hennequin, B.
Carrier recombination effects in strain compensated quantum dot stacks embedded in solar cells
Applied Physics Letters
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2008
Citación (BIBTEX): @article{RID:0116150735909-262, title = {Carrier recombination effects in strain compensated quantum dot stacks embedded in solar cells}, journal = {Applied Physics Letters}, year = {2008}, author = {Alonso-Alvarez, D and Taboada, AG and Ripalda, JM and Alen, B and Gonzalez, Y and Gonzalez, L and Garcia, JM and Briones, F and Marti, A and Luque, A and Sanchez, AM and Molina, SI}, volume = {93}, number = {12} }
DOI10.1063/1.2978243
Coautoría
Alonso-Alvarez, D
Carrier recombination effects in strain compensated quantum dot stacks embedded in solar cells
Applied Physics Letters
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2008
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-52949122102&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina2008,title = {Carrier recombination effects in strain compensated quantum dot stacks embedded in solar cells},journal = {Applied Physics Letters},year = {2008},volume = {93},number = {12},author = {Alonso-Álvarez, D. and Taboada, A.G. and Ripalda, J.M. and Aĺn, B. and González, Y. and González, L. and García, J.M. and Briones, F. and Martí, A. and Luque, A. and Sánchez, A.M. and Molina, S.I.}}
DOI10.1063/1.2978243
Coautoría
Alonso-Álvarez, D.
Experimental and simulated strain field maps in stacked quantum wires
Microscopy and Microanalysis
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2008
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-49549094479&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina2008,title = {Experimental and simulated strain field maps in stacked quantum wires},journal = {Microscopy and Microanalysis},year = {2008},volume = {14},number = {SUPPL. 2},pages = {344-345},author = {Ben, T. and Sales, D.L. and Pizarro, J. and Galindo, P.L. and Fuster, D. and González, Y. and González, L. and Varela, M. and Pennycook, S.J. and Molina, S.I.}}
DOI10.1017/S1431927608087084
Coautoría
Ben, T.
Point defect configurations of supersaturated Au atoms inside Si nanowires
Nano Letters
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2008
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-46649108933&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina2008,title = {Point defect configurations of supersaturated Au atoms inside Si nanowires},journal = {Nano Letters},year = {2008},volume = {8},number = {4},pages = {1016-1019},author = {Oh, S.H. and Van Benthem, K. and Molina, S.I. and Borisevich, A.Y. and Luo, W. and Werner, P. and Zakharov, N.D. and Kumar, D. and Pantelides, S.T. and Pennycook, S.J.}}
DOI10.1021/nl072670+
Coautoría
Oh, S.H.
STRESS COMPENSATION BY GaP MONOLAYERS FOR STACKED InAs/GaAs QUANTUM DOTS SOLAR CELLS
Pvsc: 2008 33rd Ieee Photovoltaic Specialists Conference, Vols 1-4
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2008
Citación (BIBTEX): @article{RID:0116150735910-258, title = {STRESS COMPENSATION BY GaP MONOLAYERS FOR STACKED InAs/GaAs QUANTUM DOTS SOLAR CELLS}, journal = {Pvsc: 2008 33rd Ieee Photovoltaic Specialists Conference, Vols 1-4}, year = {2008}, author = {Alonso-Alvarez, D and Taboada, AG and Gonzalez, Y and Ripalda, JM and Alen, B and Gonzalez, L and Garcia, JM and Briones, F and Marti, A and Luque, A and Sanchez, AM and Molina, SI}, pages = {2178-2183} }
Coautoría
Alonso-Alvarez, D
Simulation of high angle annular dark field scanning transmission electron microscopy images of large nanostructures
Applied Physics Letters
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2008
Citación (BIBTEX): @article{RID:0116150735910-261, title = {Simulation of high angle annular dark field scanning transmission electron microscopy images of large nanostructures}, journal = {Applied Physics Letters}, year = {2008}, author = {Pizarro, J and Galindo, PL and Guerrero, E and Yanez, A and Guerrero, MP and Rosenauer, A and Sales, DL and Molina, SI}, volume = {93}, number = {15} }
DOI10.1063/1.2998656
Coautoría
Pizarro, J
Simulation of high angle annular dark field scanning transmission electron microscopy images of large nanostructures
Applied Physics Letters
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2008
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-54149090886&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina2008,title = {Simulation of high angle annular dark field scanning transmission electron microscopy images of large nanostructures},journal = {Applied Physics Letters},year = {2008},volume = {93},number = {15},author = {Pizarro, J. and Galindo, P.L. and Guerrero, E. and Yáñez, A. and Guerrero, M.P. and Rosenauer, A. and Sales, D.L. and Molina, S.I.}}
DOI10.1063/1.2998656
Coautoría
Pizarro, J.
Stress compensation by GaP monolayers for stacked InAs/GaAs quantum dots solar cells
Conference Record of the IEEE Photovoltaic Specialists Conference
Tipo de Publicación: CONFERENCE_PAPER
Fecha: 2008
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-84879730453&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina2008,title = {Stress compensation by GaP monolayers for stacked InAs/GaAs quantum dots solar cells},journal = {Conference Record of the IEEE Photovoltaic Specialists Conference},year = {2008},author = {Alonso-Alvarez, D. and Taboada, A.G. and Gonzalez, Y. and Ripalda, J.M. and Alen, B. and Gonzalez, L. and Garcia, J.M. and Briones, F. and Marti, A. and Luque, A. and Sanchez, A.M. and Molina, S.I.}}
DOI10.1109/PVSC.2008.4922519
Coautoría
Alonso-Alvarez, D.
A TEM study of the evolution of InAs/GaAs self-assembled dots on (3 1 1)B GaAs with growth interruption
Semiconductor Science and Technology
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2007
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-34247244200&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina2007,title = {A TEM study of the evolution of InAs/GaAs self-assembled dots on (3 1 1)B GaAs with growth interruption},journal = {Semiconductor Science and Technology},year = {2007},volume = {22},number = {2},pages = {168-170},author = {Sales, D.L. and Sanchez, A.M. and Beanland, R. and Henini, M. and Molina, S.I.}}
DOI10.1088/0268-1242/22/2/029
Coautoría
Sales, D.L.
A TEM study of the evolution of InAs/GaAs self-assembled dots on (311)B GaAs with growth interruption
Semiconductor Science and Technology
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2007
Citación (BIBTEX): @article{RID:0116150735910-271, title = {A TEM study of the evolution of InAs/GaAs self-assembled dots on (311)B GaAs with growth interruption}, journal = {Semiconductor Science and Technology}, year = {2007}, author = {Sales, DL and Sanchez, AM and Beanland, R and Henini, M and Molina, SI}, volume = {22}, number = {2}, pages = {168-170} }
DOI10.1088/0268-1242/22/2/029
Coautoría
Sales, DL
Critical strain region evaluation of self-assembled semiconductor quantum dots
Nanotechnology
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2007
Citación (BIBTEX): @article{RID:0116150735910-266, title = {Critical strain region evaluation of self-assembled semiconductor quantum dots}, journal = {Nanotechnology}, year = {2007}, author = {Sales, DL and Pizarro, J and Galindo, PL and Garcia, R and Trevisi, G and Frigeri, P and Nasi, L and Franchi, S and Molina, SI}, volume = {18}, number = {47} }
DOI10.1088/0957-4484/18/47/475503
Coautoría
Sales, DL
Critical strain region evaluation of self-assembled semiconductor quantum dots
Nanotechnology
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2007
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-35748951609&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina2007,title = {Critical strain region evaluation of self-assembled semiconductor quantum dots},journal = {Nanotechnology},year = {2007},volume = {18},number = {47},author = {Sales, D.L. and Pizarro, J. and Galindo, P.L. and Garcia, R. and Trevisi, G. and Frigeri, P. and Nasi, L. and Franchi, S. and Molina, S.I.}}
DOI10.1088/0957-4484/18/47/475503
Coautoría
Sales, D.L.
Direct imaging of quantum wires nucleated at diatomic steps
Applied Physics Letters
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2007
Citación (BIBTEX): @article{RID:0116150735910-268, title = {Direct imaging of quantum wires nucleated at diatomic steps}, journal = {Applied Physics Letters}, year = {2007}, author = {Molina, SI and Varela, M and Sales, DL and Ben, T and Pizarro, J and Galindo, PL and Fuster, D and Gonzalez, Y and Gonzalez, L and Pennycook, SJ}, volume = {91} }
DOI10.1063/1.2790483
Coautoría
Molina, SI
Direct imaging of quantum wires nucleated at diatomic steps
Applied Physics Letters
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2007
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-34948840547&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina2007,title = {Direct imaging of quantum wires nucleated at diatomic steps},journal = {Applied Physics Letters},year = {2007},volume = {91},number = {14},author = {Molina, S.I. and Varela, M. and Sales, D.L. and Ben, T. and Pizarro, J. and Galindo, P.L. and Fuster, D. and González, Y. and González, L. and Pennycook, S.J.}}
DOI10.1063/1.2790483
Coautoría
Molina, S.I.
Error quantification in strain mapping methods
Microscopy and Microanalysis
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2007
Citación (BIBTEX): @article{RID:0116150735910-270, title = {Error quantification in strain mapping methods}, journal = {Microscopy and Microanalysis}, year = {2007}, author = {Guerrero, E and Galindo, P and Yanez, A and Ben, T and Molina, SI}, volume = {13}, number = {5}, pages = {320-328} }
DOI10.1017/S1431927607070407
Coautoría
Guerrero, E
Error quantification in strain mapping methods
Microscopy and Microanalysis
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2007
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-34948885612&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina2007,title = {Error quantification in strain mapping methods},journal = {Microscopy and Microanalysis},year = {2007},volume = {13},number = {5},pages = {320-328},author = {Guerrero, E. and Galindo, P. and Yáñez, A. and Ben, T. and Molina, S.I.}}
DOI10.1017/S1431927607070407
Coautoría
Guerrero, E.
Excitons in coupled InAs/InP self-assembled quantum wires
Physical Review B
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2007
Citación (BIBTEX): @article{RID:0116150735910-267, title = {Excitons in coupled InAs/InP self-assembled quantum wires}, journal = {Physical Review B}, year = {2007}, author = {Sidor, Y and Partoens, B and Peeters, FM and Ben, T and Ponce, A and Sales, DL and Molina, SI and Fuster, D and Gonzalez, L and Gonzalez, Y}, volume = {75} }
DOI10.1103/PhysRevB.75.125120
Coautoría
Sidor, Y
Excitons in coupled InAsInP self-assembled quantum wires
Physical Review B - Condensed Matter and Materials Physics
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2007
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-34047101385&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina2007,title = {Excitons in coupled InAsInP self-assembled quantum wires},journal = {Physical Review B - Condensed Matter and Materials Physics},year = {2007},volume = {75},number = {12},author = {Sidor, Y. and Partoens, B. and Peeters, F.M. and Ben, T. and Ponce, A. and Sales, D.L. and Molina, S.I. and Fuster, D. and González, L. and González, Y.}}
DOI10.1103/PhysRevB.75.125120
Coautoría
Sidor, Y.
Incorporation of Sb in InAsGaAs quantum dots
Applied Physics Letters
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2007
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-37549022212&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina2007,title = {Incorporation of Sb in InAsGaAs quantum dots},journal = {Applied Physics Letters},year = {2007},volume = {91},number = {26},author = {Molina, S.I. and Sánchez, A.M. and Beltrán, A.M. and Sales, D.L. and Ben, T. and Chisholm, M.F. and Varela, M. and Pennycook, S.J. and Galindo, P.L. and Papworth, A.J. and Goodhew, P.J. and Ripalda, J.M.}}
DOI10.1063/1.2826546
Coautoría
Molina, S.I.
Incorporation of sb in InAs/GaAs quantum dots
Applied Physics Letters
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2007
Citación (BIBTEX): @article{RID:0116150735911-265, title = {Incorporation of sb in InAs/GaAs quantum dots}, journal = {Applied Physics Letters}, year = {2007}, author = {Molina, SI and Sanchez, AM and Beltran, AM and Sales, DL and Ben, T and Chisholm, MF and Varela, M and Pennycook, SJ and Galindo, PL and Papworth, AJ and Goodhew, PJ and Ripalda, JM}, volume = {91}, number = {26} }
DOI10.1063/1.2826546
Coautoría
Molina, SI
Molecular beam epitaxy of GaBiAs on (311) B GaAs substrates
Applied Physics Letters
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2007
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-37549008285&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina2007,title = {Molecular beam epitaxy of GaBiAs on (311) B GaAs substrates},journal = {Applied Physics Letters},year = {2007},volume = {91},number = {25},author = {Henini, M. and Ibáñez, J. and Schmidbauer, M. and Shafi, M. and Novikov, S.V. and Turyanska, L. and Molina, S.I. and Sales, D.L. and Chisholm, M.F. and Misiewicz, J.}}
DOI10.1063/1.2827181
Coautoría
Henini, M.
Molecular beam epitaxy of GaBiAs on (311)B GaAs substrates
Applied Physics Letters
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2007
Citación (BIBTEX): @article{RID:0116150735911-264, title = {Molecular beam epitaxy of GaBiAs on (311)B GaAs substrates}, journal = {Applied Physics Letters}, year = {2007}, author = {Henini, M and Ibanez, J and Schmidbauer, M and Shafi, M and Novikov, SV and Turyanska, L and Molina, SI and Sales, DL and Chisholm, MF and Misiewicz, J}, volume = {91}, number = {25} }
DOI10.1063/1.2827181
Coautoría
Henini, M
The Peak Pairs algorithm for strain mapping from HRTEM images
Ultramicroscopy
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2007
Citación (BIBTEX): @article{RID:0116150735911-269, title = {The Peak Pairs algorithm for strain mapping from HRTEM images}, journal = {Ultramicroscopy}, year = {2007}, author = {Galindo, PL and Kret, S and Sanchez, AM and Laval, JY and Yanez, A and Pizarro, J and Guerrero, E and Ben, T and Molina, SI}, volume = {107}, pages = {1186-1193} }
DOI10.1016/j.ultramic.2007.01.019
Coautoría
Galindo, PL
The Peak Pairs algorithm for strain mapping from HRTEM images
Ultramicroscopy
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2007
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-34548329658&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina2007,title = {The Peak Pairs algorithm for strain mapping from HRTEM images},journal = {Ultramicroscopy},year = {2007},volume = {107},number = {12},pages = {1186-1193},author = {Galindo, P.L. and Kret, S. and Sanchez, A.M. and Laval, J.-Y. and Yáñez, A. and Pizarro, J. and Guerrero, E. and Ben, T. and Molina, S.I.}}
DOI10.1016/j.ultramic.2007.01.019
Coautoría
Galindo, P.L.
Determination of the strain generated in InAs/InP quantum wires: Prediction of nucleation sites
Nanotechnology
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2006
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-33846056055&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina2006,title = {Determination of the strain generated in InAs/InP quantum wires: Prediction of nucleation sites},journal = {Nanotechnology},year = {2006},volume = {17},number = {22},pages = {5652-5658},author = {Molina, S.I. and Ben, T. and Sales, D.L. and Pizarro, J. and Galindo, P.L. and Varela, M. and Pennycook, S.J. and Fuster, D. and González, Y. and González, L.}}
DOI10.1088/0957-4484/17/22/020
Coautoría
Molina, S.I.
Determination of the strain generated in InAs/InP quantum wires: prediction of nucleation sites
Nanotechnology
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2006
Citación (BIBTEX): @article{RID:0116150735911-272, title = {Determination of the strain generated in InAs/InP quantum wires: prediction of nucleation sites}, journal = {Nanotechnology}, year = {2006}, author = {Molina, SI and Ben, T and Sales, DL and Pizarro, J and Galindo, PL and Varela, M and Pennycook, SJ and Fuster, D and Gonzalez, Y and Gonzalez, L}, volume = {17}, number = {22}, pages = {5652-5658} }
DOI10.1088/0957-4484/17/22/020
Coautoría
Molina, SI
Direct experimental evidence of metastable epitaxial zinc-blende MgS
Applied Physics Letters
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2006
Citación (BIBTEX): @article{RID:0116150735911-273, title = {Direct experimental evidence of metastable epitaxial zinc-blende MgS}, journal = {Applied Physics Letters}, year = {2006}, author = {Sanchez, AM and Olvera, J and Ben, T and Morrod, JK and Prior, KA and Molina, SI}, volume = {89}, number = {12} }
DOI10.1063/1.2353826
Coautoría
Sanchez, AM
Direct experimental evidence of metastable epitaxial zinc-blende MgS
Applied Physics Letters
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2006
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-33748955351&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina2006,title = {Direct experimental evidence of metastable epitaxial zinc-blende MgS},journal = {Applied Physics Letters},year = {2006},volume = {89},number = {12},author = {Sanchez, A.M. and Olvera, J. and Ben, T. and Morrod, J.K. and Prior, K.A. and Molina, S.I.}}
DOI10.1063/1.2353826
Coautoría
Sanchez, A.M.
Chemical composition and strain distribution of InAs/GaAs(001) stacked quantum rings
Microscopy of Semiconducting Materials
Tipo de Publicación: BOOK
Fecha: 2005
Citación (BIBTEX): @book{RID:0116150735911-274, title = {Chemical composition and strain distribution of InAs/GaAs(001) stacked quantum rings}, publisher = {}, year = {2005}, author = {Ben, T and Sanchez, AM and Molina, SI and Granados, D and Garcia, JM and Kret, S and Cullis, AG and Hutchison, JL}, editor = {}, volume = {107}, series = {Microscopy of Semiconducting Materials}, pages = {271-274} }
Coautoría
Ben, T
Quantification of the influence of TEM operation parameters on the error of HREM image matching
Microscopy of Semiconducting Materials
Tipo de Publicación: BOOK
Fecha: 2005
Citación (BIBTEX): @book{RID:0116150735911-277, title = {Quantification of the influence of TEM operation parameters on the error of HREM image matching}, publisher = {}, year = {2005}, author = {Pizarro, J and Guerrero, E and Galindo, P and Yanez, A and Ben, T and Molina, SI and Cullis, AG and Hutchison, JL}, editor = {}, volume = {107}, series = {Microscopy of Semiconducting Materials}, pages = {195-198} }
Coautoría
Pizarro, J
Quantitative measurements of the inhomogeneous strain field of stacked self-assembled InAs/InP(001) quantum wires by the Peak Finding Method
Microscopy of Semiconducting Materials
Tipo de Publicación: BOOK
Fecha: 2005
Citación (BIBTEX): @book{RID:0116150735912-275, title = {Quantitative measurements of the inhomogeneous strain field of stacked self-assembled InAs/InP(001) quantum wires by the Peak Finding Method}, publisher = {}, year = {2005}, author = {Ben, T and Molina, SI and Garcia, R and Fuster, D and Gonzalez, MU and Gonzalez, L and Gonzalez, Y and Kret, S and Cullis, AG and Hutchison, JL}, editor = {}, volume = {107}, series = {Microscopy of Semiconducting Materials}, pages = {299-302} }
Coautoría
Ben, T
Room temperature emission at 1.6 mu m from InGaAs quantum dots capped with GaAsSb
Applied Physics Letters
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2005
Citación (BIBTEX): @article{RID:0116150735912-278, title = {Room temperature emission at 1.6 mu m from InGaAs quantum dots capped with GaAsSb}, journal = {Applied Physics Letters}, year = {2005}, author = {Ripalda, JM and Granados, D and Gonzalez, Y and Sanchez, AM and Molina, SI and Garcia, JM}, volume = {87}, number = {20} }
DOI10.1063/1.2130529
Coautoría
Ripalda, JM
Room temperature emission at 1.6 μm from InGaAs quantum dots capped with GaAsSb
Applied Physics Letters
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2005
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-27744536985&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina2005,title = {Room temperature emission at 1.6 μm from InGaAs quantum dots capped with GaAsSb},journal = {Applied Physics Letters},year = {2005},volume = {87},number = {20},pages = {1-3},author = {Ripalda, J.M. and Granados, D. and González, Y. and Sánchez, A.M. and Molina, S.I. and García, J.M.}}
DOI10.1063/1.2130529
Coautoría
Ripalda, J.M.
Strain mapping from HRTEM images
Microscopy of Semiconducting Materials
Tipo de Publicación: BOOK
Fecha: 2005
Citación (BIBTEX): @book{RID:0116150735912-276, title = {Strain mapping from HRTEM images}, publisher = {}, year = {2005}, author = {Galindo, PL and Yanez, A and Pizarro, J and Guerrero, E and Ben, T and Molina, SI and Cullis, AG and Hutchison, JL}, editor = {}, volume = {107}, series = {Microscopy of Semiconducting Materials}, pages = {191-194} }
Coautoría
Galindo, PL
Vertical order in stacked layers of self-assembled In(Ga)As quantum rings on GaAs (001)
Applied Physics Letters
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2005
Citación (BIBTEX): @article{RID:0116150735912-279, title = {Vertical order in stacked layers of self-assembled In(Ga)As quantum rings on GaAs (001)}, journal = {Applied Physics Letters}, year = {2005}, author = {Granados, D and Garcia, JM and Ben, T and Molina, SI}, volume = {86} }
DOI10.1063/1.1866228
Coautoría
Granados, D
Vertical order in stacked layers of self-assembled In(Ga)As quantum rings on GaAs (001)
Applied Physics Letters
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2005
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-17044405970&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina2005,title = {Vertical order in stacked layers of self-assembled In(Ga)As quantum rings on GaAs (001)},journal = {Applied Physics Letters},year = {2005},volume = {86},number = {7},pages = {1-3},author = {Granados, D. and García, J.M. and Ben, T. and Molina, S.I.}}
DOI10.1063/1.1866228
Coautoría
Granados, D.
Comparison of the thickness determined by Fresnel contrast and Rutherford backscattering spectrometry in ultra-thin layers
Design and Nature
Tipo de Publicación: BOOK
Fecha: 2004
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-7744230492&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina2004,title = {Comparison of the thickness determined by Fresnel contrast and Rutherford backscattering spectrometry in ultra-thin layers},journal = {Design and Nature},year = {2004},volume = {6},pages = {305-308},author = {Ponce, A. and Molina, S.I. and García-López, J. and Battistig, G.}}
EID2-s2.0-7744230492
Coautoría
Ponce, A.
Crystalline inclusions formed in C + N + BF2 coimplanted on silicon (111)
Microchimica Acta
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2004
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-2942660140&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina2004,title = {Crystalline inclusions formed in C + N + BF2 coimplanted on silicon (111)},journal = {Microchimica Acta},year = {2004},volume = {145},number = {1-4},pages = {165-169},author = {Ponce, A. and Morales, F.M. and Molina, S.I. and Barbadillo, L. and Cervera, M. and Hernández, M.J. and Rodríguez, P. and Piqueras, J.}}
EID2-s2.0-2942660140
Coautoría
Ponce, A.
Emission wavelength engineering of InAs/InP(001) quantum wires
European Physical Journal B
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2004
Citación (BIBTEX): @article{RID:0116150735912-1127, title = {Emission wavelength engineering of InAs/InP(001) quantum wires}, journal = {European Physical Journal B}, year = {2004}, author = {Fuster, D and Gonzalez, L and Gonzalez, Y and Martinez-Pastor, J and Ben, T and Ponce, A and Molina, S}, volume = {40}, number = {4}, pages = {433-437} }
DOI10.1140/epjb/e2004-00228-4
Coautoría
Fuster, D
Emission wavelength engineering of InAs/InP(001) quantum wires
European Physical Journal B
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2004
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-6344235525&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina2004,title = {Emission wavelength engineering of InAs/InP(001) quantum wires},journal = {European Physical Journal B},year = {2004},volume = {40},number = {4},pages = {433-437},author = {Fuster, D. and González, L. and González, Y. and Martínez-Pastor, J. and Ben, T. and Ponce, A. and Molina, S.I.}}
DOI10.1140/epjb/e2004-00228-4
Coautoría
Fuster, D.
Influence of the Ge coverage prior to carbonization on the structure of SiC grown on Si(111)
Materials Science Forum
Tipo de Publicación: BOOK
Fecha: 2004
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-8744242099&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina2004,title = {Influence of the Ge coverage prior to carbonization on the structure of SiC grown on Si(111)},journal = {Materials Science Forum},year = {2004},volume = {457-460},number = {I},pages = {297-300},author = {Morales, F.M. and Zgheib, Ch. and Molina, S.I. and Araújo, D. and García, R. and Fernández, C. and Sanz-Hervás, A. and Masri, P. and Weih, P. and Stauden, Th. and Ambacher, O. and Pezoldt, J.}}
EID2-s2.0-8744242099
Coautoría
Morales, F.M.
Interfacial strain and defects in Si (001) carbonisation layers for 3C-SiC hetero-epitaxy
Materials Science Forum
Tipo de Publicación: BOOK
Fecha: 2004
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-8644236637&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina2004,title = {Interfacial strain and defects in Si (001) carbonisation layers for 3C-SiC hetero-epitaxy},journal = {Materials Science Forum},year = {2004},volume = {457-460},number = {I},pages = {277-280},author = {Bustarret, E. and Araújo, D. and Méndez, D. and Morales, F.M. and Pacheco, F.J. and Molina, S.I. and Rochat, N. and Ferro, G. and Monteil, Y.}}
EID2-s2.0-8644236637
Coautoría
Bustarret, E.
Microchemical analysis and microstructural development of Cr-doped mullites
Microchimica Acta
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2004
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-2942683624&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina2004,title = {Microchemical analysis and microstructural development of Cr-doped mullites},journal = {Microchimica Acta},year = {2004},volume = {145},number = {1-4},pages = {255-260},author = {Villar, M.P. and Geraldía, J.M. and Molina, S.I. and García, R.}}
EID2-s2.0-2942683624
Coautoría
Villar, M.P.
Neural networks applied to the determination of thickness and defocus from high resolution transmission electron microscopy images
Design and Nature
Tipo de Publicación: BOOK
Fecha: 2004
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-7744227880&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina2004,title = {Neural networks applied to the determination of thickness and defocus from high resolution transmission electron microscopy images},journal = {Design and Nature},year = {2004},volume = {6},pages = {23-26},author = {Galindo, P.L. and Ponce, A. and Molina, S.I.}}
EID2-s2.0-7744227880
Coautoría
Galindo, P.L.
Size and critical thickness evolution during growth of stacked layers of InAS/InP(001) quantum wires studied by in situ stress measurements
Self-Organized Processes in Semiconductor Heteroepitaxy
Tipo de Publicación: BOOK
Fecha: 2004
Citación (BIBTEX): @book{RID:0116150735913-282, title = {Size and critical thickness evolution during growth of stacked layers of InAS/InP(001) quantum wires studied by in situ stress measurements}, publisher = {}, year = {2004}, author = {Fuster, D and Gonzalez, MU and Gonzalez, L and Gonzalez, Y and Ben, T and Ponce, A and Molina, SI and Norman, AG and Goldman, RS and Noetzel, R and Stringfellow, GB}, editor = {}, volume = {794}, series = {Self-Organized Processes in Semiconductor Heteroepitaxy}, pages = {119-124} }
Coautoría
Fuster, D
Size control of InAs/InP(001) quantum wires by tailoring P/As exchange
Applied Physics Letters
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2004
Citación (BIBTEX): @article{RID:0116150735913-284, title = {Size control of InAs/InP(001) quantum wires by tailoring P/As exchange}, journal = {Applied Physics Letters}, year = {2004}, author = {Fuster, D and Gonzalez, MU and Gonzalez, L and Gonzalez, Y and Ben, T and Ponce, A and Molina, SI and Martinez-Pastor, J}, volume = {85}, number = {8}, pages = {1424-1426} }
DOI10.1063/1.1787155
Coautoría
Fuster, D
Size control of InAs/InP(001) quantum wires by tailoring P/As exchange
Applied Physics Letters
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2004
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-4544224590&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina2004,title = {Size control of InAs/InP(001) quantum wires by tailoring P/As exchange},journal = {Applied Physics Letters},year = {2004},volume = {85},number = {8},pages = {1424-1426},author = {Fuster, D. and González, M.U. and González, L. and González, Y. and Ben, T. and Ponce, A. and Molina, S.I. and Martínez-Pastor, J.}}
DOI10.1063/1.1787155
Coautoría
Fuster, D.
Stacking of InAs/InP (001) quantum wires studied by in situ stress measurements: Role of inhomogeneous stress fields
Applied Physics Letters
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2004
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-3042635866&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina2004,title = {Stacking of InAs/InP (001) quantum wires studied by in situ stress measurements: Role of inhomogeneous stress fields},journal = {Applied Physics Letters},year = {2004},volume = {84},number = {23},pages = {4723-4725},author = {Fuster, D. and González, M.U. and González, L. and González, Y. and Ben, T. and Ponce, A. and Molina, S.I.}}
DOI10.1063/1.1759374
Coautoría
Fuster, D.
Stacking of InAs/InP(001) quantum wires studied by in situ stress measurements: Role of inhomogeneous stress fields
Applied Physics Letters
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2004
Citación (BIBTEX): @article{RID:0116150735913-285, title = {Stacking of InAs/InP(001) quantum wires studied by in situ stress measurements: Role of inhomogeneous stress fields}, journal = {Applied Physics Letters}, year = {2004}, author = {Fuster, D and Gonzalez, MU and Gonzalez, L and Gonzalez, Y and Ben, T and Ponce, A and Molina, SI}, volume = {84}, number = {23}, pages = {4723-4725} }
DOI10.1063/1.1759374
Coautoría
Fuster, D
Structural study of micro and nanotubes synthesized by rapid thermal chemical vapor deposition
Microchimica Acta
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2004
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-2942675337&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina2004,title = {Structural study of micro and nanotubes synthesized by rapid thermal chemical vapor deposition},journal = {Microchimica Acta},year = {2004},volume = {145},number = {1-4},pages = {129-132},author = {Morales, F.M. and Méndez, D. and Ben, T. and Molina, S.I. and Araújo, D. and García, R.}}
EID2-s2.0-2942675337
Coautoría
Morales, F.M.
The role of Ge predeposition temperature in the MBE epitaxy of SiC on silicon
E-Mrs 2003 Fall Meeting, Symposia a and C, Proceedings
Tipo de Publicación: BOOK
Fecha: 2004
Citación (BIBTEX): @book{RID:0116150735913-280, title = {The role of Ge predeposition temperature in the MBE epitaxy of SiC on silicon}, publisher = {}, year = {2004}, author = {Morales, FM and Zgheib, C and Molina, SI and Araujo, D and Garcia, R and Fernandez, C and Sanz-Hervas, A and Masri, P and Weih, P and Stauden, T and Cimalla, V and Ambacher, O and Pezoldt, J and Godlewski, M and Kossut, J}, editor = {}, series = {E-Mrs 2003 Fall Meeting, Symposia a and C, Proceedings}, pages = {341-346} }
DOI10.1002/pssc.200303940
Coautoría
Morales, FM
The role of Ge predeposition temperature in the MBE epitaxy of SiC on silicon
Physica Status Solidi C: Conferences
Tipo de Publicación: CONFERENCE_PAPER
Fecha: 2004
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-2342448059&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina2004,title = {The role of Ge predeposition temperature in the MBE epitaxy of SiC on silicon},journal = {Physica Status Solidi C: Conferences},year = {2004},volume = {1},number = {2},pages = {341-346},author = {Morales, F.M. and Zgheib, Ch. and Molina, S.I. and Araújo, D. and García, R. and Fernández, C. and Sanz-Hervás, A. and Masri, P. and Weih, P. and Stauden, Th. and Cimalla, V. and Ambacher, O. and Pezoldt, J.}}
DOI10.1002/pssc.200303940
Coautoría
Morales, F.M.
Transmission Electron Microscopy study of SiC layers obtained by carbonization of Si wafers | Estudio por microscopía electrónica y espectroscopía de infra-rojos de capas de SiC obtenidas mediante carburización de obleas de Si
Boletin de la Sociedad Espanola de Ceramica y Vidrio
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2004
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-33744750762&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina2004,title = {Transmission Electron Microscopy study of SiC layers obtained by carbonization of Si wafers | Estudio por microscopía electrónica y espectroscopía de infra-rojos de capas de SiC obtenidas mediante carburización de obleas de Si},journal = {Boletin de la Sociedad Espanola de Ceramica y Vidrio},year = {2004},volume = {43},number = {2},pages = {363-366},author = {Morales, F.M. and Ramírez, J. and Fernández, C. and Barbadillo, L. and Piqueras, J. and Araújo, D. and Molina, S.I. and García, R.}}
EID2-s2.0-33744750762
Coautoría
Morales, F.M.
Comparative TEM Investigation of MBE and RTCVD Conversion of Si into SiC
Materials Science Forum
Tipo de Publicación: BOOK
Fecha: 2003
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-18744420199&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina2003,title = {Comparative TEM Investigation of MBE and RTCVD Conversion of Si into SiC},journal = {Materials Science Forum},year = {2003},volume = {433-436},pages = {285-288},author = {Morales, F.M. and Molina, S.I. and Araújo, D. and Cimalla, V. and Pezoldt, J.}}
EID2-s2.0-18744420199
Coautoría
Morales, F.M.
HRTEM study of AlxGa1-xN/AlN DBR mirrors
Diamond and Related Materials
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2003
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-0037508550&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina2003,title = {HRTEM study of AlxGa1-xN/AlN DBR mirrors},journal = {Diamond and Related Materials},year = {2003},volume = {12},number = {3-7},pages = {1178-1181},author = {Ponce, A. and Molina, S.I. and Fedler, F. and Klausing, H. and Semchinova, O. and Aderhold, J. and Graul, J.}}
DOI10.1016/S0925-9635(02)00215-7
Coautoría
Ponce, A.
N + BF2 and N + C + BF2 high-dose co-implantation in silicon
Applied Physics A: Materials Science and Processing
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2003
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-0037355744&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina2003,title = {N + BF2 and N + C + BF2 high-dose co-implantation in silicon},journal = {Applied Physics A: Materials Science and Processing},year = {2003},volume = {76},number = {5},pages = {791-800},author = {Barbadillo, L. and Cervera, M. and Hernández, M.J. and Rodríguez, P. and Piqueras, J. and Molina, S.I. and Ponce, A. and Morales, F.M.}}
DOI10.1007/s00339-002-1503-8
Coautoría
Barbadillo, L.
N+BF2 and N+C+BF2 high-dose co-implantation in silicon
Applied Physics a-Materials Science & Processing
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2003
Citación (BIBTEX): @article{RID:0116150735914-294, title = {N+BF2 and N+C+BF2 high-dose co-implantation in silicon}, journal = {Applied Physics a-Materials Science & Processing}, year = {2003}, author = {Barbadillo, L and Cervera, M and Hernandez, MJ and Rodriguez, P and Piqueras, J and Molina, SI and Ponce, A and Morales, FM}, volume = {76}, number = {5}, pages = {791-800} }
DOI10.1007/s00339-002-1503-8
Coautoría
Barbadillo, L
SiC voids, mosaic microstructure and dislocations distribution in Si carbonized layers
Diamond and Related Materials
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2003
Citación (BIBTEX): @article{RID:0116150735914-295, title = {SiC voids, mosaic microstructure and dislocations distribution in Si carbonized layers}, journal = {Diamond and Related Materials}, year = {2003}, author = {Morales, FM and Molina, SI and Araujo, D and Garcia, R and Cimalla, V and Pezoldt, J}, volume = {12}, number = {3-7}, pages = {1227-1230} }
DOI10.1016/S0925-9635(02)00300-X
Coautoría
Morales, FM
SiC voids, mosaic microstructure and dislocations distribution in Si carbonized layers
Diamond and Related Materials
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2003
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-0037514589&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina2003,title = {SiC voids, mosaic microstructure and dislocations distribution in Si carbonized layers},journal = {Diamond and Related Materials},year = {2003},volume = {12},number = {3-7},pages = {1227-1230},author = {Morales, F.M. and Molina, S.I. and Araújo, D. and García, R. and Cimalla, V. and Pezoldt, J.}}
DOI10.1016/S0925-9635(02)00300-X
Coautoría
Morales, F.M.
Size and critical thickness evolution during growth of stacked layers of InAs/InP(001) quantum wires studied by in situ stress measurements
Materials Research Society Symposium - Proceedings
Tipo de Publicación: CONFERENCE_PAPER
Fecha: 2003
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-2942672682&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina2003,title = {Size and critical thickness evolution during growth of stacked layers of InAs/InP(001) quantum wires studied by in situ stress measurements},journal = {Materials Research Society Symposium - Proceedings},year = {2003},volume = {794},pages = {119-124},author = {Fuster, D. and González, M.U. and González, L. and González, Y. and Ben, T. and Ponce, A. and Molina, S.I.}}
EID2-s2.0-2942672682
Coautoría
Fuster, D.
Size self-filtering effect in vertical stacks of InAs/InP self-assembled quantum wires
Physica E-Low-Dimensional Systems & Nanostructures
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2003
Citación (BIBTEX): @article{RID:0116150735915-293, title = {Size self-filtering effect in vertical stacks of InAs/InP self-assembled quantum wires}, journal = {Physica E-Low-Dimensional Systems & Nanostructures}, year = {2003}, author = {Alen, B and Martinez-Pastor, J and Fuster, D and Garcia, JM and Gonzalez, L and Molina, SI and Ponce, A and Garcia, R}, volume = {17}, number = {1-4}, pages = {174-176} }
DOI10.1016/S1386-9477(02)00740-3
Coautoría
Alen, B
Size self-filtering effect in vertical stacks of InAs/InP self-assembled quantum wires
Physica E: Low-Dimensional Systems and Nanostructures
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2003
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-3042681544&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina2003,title = {Size self-filtering effect in vertical stacks of InAs/InP self-assembled quantum wires},journal = {Physica E: Low-Dimensional Systems and Nanostructures},year = {2003},volume = {17},number = {1-4},pages = {174-176},author = {Alén, B. and Martínez-Pastor, J. and Fuster, D. and García, J.M. and González, L. and Molina, S.I. and Ponce, A. and García, R.}}
DOI10.1016/S1386-9477(02)00740-3
Coautoría
Alén, B.
Structural Study of GaN Layers Grown on Carbonized Si(111) Substrates
Materials Science Forum
Tipo de Publicación: BOOK
Fecha: 2003
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-18744421706&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina2003,title = {Structural Study of GaN Layers Grown on Carbonized Si(111) Substrates},journal = {Materials Science Forum},year = {2003},volume = {433-436},pages = {1003-1006},author = {Morales, F.M. and Ponce, A. and Molina, S.I. and Araújo, D. and García, R. and Ristic, J. and Sánchez-García, M.-A. and Calleja, E. and Cimalla, V. and Pezoldt, J.}}
EID2-s2.0-18744421706
Coautoría
Morales, F.M.
Transmission electron microscopy study of simultaneous high-dose C+ + N+ co-implantation into (1 1 1)Si
Thin Solid Films
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2003
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-0037463219&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina2003,title = {Transmission electron microscopy study of simultaneous high-dose C+ + N+ co-implantation into (1 1 1)Si},journal = {Thin Solid Films},year = {2003},volume = {426},number = {1-2},pages = {16-30},author = {Morales, F.M. and Molina, S.I. and Ponce, A. and Araújo, D. and García, R. and Barbadillo, L. and Cervera, M. and Piqueras, J.}}
DOI10.1016/S0040-6090(02)01284-1
Coautoría
Morales, F.M.
Transmission electron microscopy study of simultaneous high-dose C++N+ co-implantation into (111)Si
Thin Solid Films
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2003
Citación (BIBTEX): @article{RID:0116150735915-297, title = {Transmission electron microscopy study of simultaneous high-dose C++N+ co-implantation into (111)Si}, journal = {Thin Solid Films}, year = {2003}, author = {Morales, FM and Molina, SI and Ponce, A and Araujo, D and Garcia, R and Barbadillo, L and Cervera, M and Piqueras, J}, volume = {426}, number = {1-2}, pages = {16-30} }
DOI10.1016/S0040-6090(02)01284-1
Coautoría
Morales, FM
Transmission electron microscopy study of ultra-thin SiC layers obtained by rapid thermal carbonization of Si wafers
Physica Status Solidi a-Applied Research
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2003
Citación (BIBTEX): @article{RID:0116150735915-298, title = {Transmission electron microscopy study of ultra-thin SiC layers obtained by rapid thermal carbonization of Si wafers}, journal = {Physica Status Solidi a-Applied Research}, year = {2003}, author = {Morales, FM and Molina, SI and Araujo, D and Cimalla, V and Pezoldt, J and Barbadillo, L and Hernandez, MJ and Piqueras, J}, volume = {195}, number = {1}, pages = {116-121} }
DOI10.1002/pssa.200306278
Coautoría
Morales, FM
Transmission electron microscopy study of ultra-thin SiC layers obtained by rapid thermal carbonization of Si wafers
Physica Status Solidi (A) Applied Research
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2003
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-0037279755&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina2003,title = {Transmission electron microscopy study of ultra-thin SiC layers obtained by rapid thermal carbonization of Si wafers},journal = {Physica Status Solidi (A) Applied Research},year = {2003},volume = {195},number = {1 SPEC},pages = {116-121},author = {Morales, F.M. and Molina, S.I. and Araújo, D. and Cimalla, V. and Pezoldt, J. and Barbadillo, L. and Hernández, M.J. and Piqueras, J.}}
DOI10.1002/pssa.200306278
Coautoría
Morales, F.M.
AlN buffer layer thickness influence on inversion domains in GaN/AlN/Si(1 1 1)
Materials Science and Engineering B: Solid-State Materials for Advanced Technology
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2002
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-0037198536&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina2002,title = {AlN buffer layer thickness influence on inversion domains in GaN/AlN/Si(1 1 1)},journal = {Materials Science and Engineering B: Solid-State Materials for Advanced Technology},year = {2002},volume = {93},number = {1-3},pages = {181-184},author = {Sánchez, A.M. and Pacheco, F.J. and Molina, S.I. and Ruterana, P. and Calle, F. and Palacios, T.A. and Sánchez-García, M.A. and Calleja, E. and García, R.}}
DOI10.1016/S0921-5107(02)00030-2
Coautoría
Sánchez, A.M.
Correlation between the AlN buffer layer thickness and the GaN polarity in GaN/AlN/Si(111) grown by MBE
Materials Research Society Symposium - Proceedings
Tipo de Publicación: CONFERENCE_PAPER
Fecha: 2002
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-0038710560&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina2002,title = {Correlation between the AlN buffer layer thickness and the GaN polarity in GaN/AlN/Si(111) grown by MBE},journal = {Materials Research Society Symposium - Proceedings},year = {2002},volume = {743},pages = {157-162},author = {Sanchez, A.M. and Ruterana, P. and Vennegues, P. and Semond, F. and Pacheco, F.J. and Molina, S.I. and Garcia, R. and Sanchez-Garcia, M.A. and Calleja, E.}}
EID2-s2.0-0038710560
Coautoría
Sanchez, A.M.
Effect of high temperature single and multiple AlN intermediate layers on N-polar and Ga-polar GaN grown by molecular beam epitaxy
Materials Research Society Symposium - Proceedings
Tipo de Publicación: CONFERENCE_PAPER
Fecha: 2002
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-0036375685&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina2002,title = {Effect of high temperature single and multiple AlN intermediate layers on N-polar and Ga-polar GaN grown by molecular beam epitaxy},journal = {Materials Research Society Symposium - Proceedings},year = {2002},volume = {693},pages = {177-182},author = {Fedler, F. and Stemmer, J. and Hauenstein, R.J. and Rotter, T. and Sanchez, A.M. and Ponce, A. and Molina, S.I. and Mistele, D. and Klausing, H. and Semchinova, O. and Aderhold, J. and Graul, J.}}
EID2-s2.0-0036375685
Coautoría
Fedler, F.
Filtering study of threading dislocations in AlN buffered MBE GaN/sapphire using single and multiple high temperature AlN intermediate layers
Physica Status Solidi (A) Applied Research
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2002
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-0036670111&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina2002,title = {Filtering study of threading dislocations in AlN buffered MBE GaN/sapphire using single and multiple high temperature AlN intermediate layers},journal = {Physica Status Solidi (A) Applied Research},year = {2002},volume = {192},number = {2},pages = {424-429},author = {Ponce, A. and Sánchez, A.M. and Molina, S.I. and Fedler, F. and Stemmer, J. and Graul, J.}}
DOI10.1002/1521-396X(200208)192:2<424::AID-PSSA424>3.0.CO;2-Q
Coautoría
Ponce, A.
High reflectivity AlGaN/AlN DBR mirrors grown by PA-MBE
Physica Status Solidi C: Conferences
Tipo de Publicación: CONFERENCE_PAPER
Fecha: 2002
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-84875089872&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina2002,title = {High reflectivity AlGaN/AlN DBR mirrors grown by PA-MBE},journal = {Physica Status Solidi C: Conferences},year = {2002},number = {1},pages = {258-262},author = {Fedler, F. and Klausing, H. and Hauenstein, R.J. and Ponce, A. and Molina, S.I. and Semchinova, O. and Aderhold, J. and Graul, J.}}
DOI10.1002/pssc.200390037
Coautoría
Fedler, F.
Origin of inversion domains in GaN/AlN/Si(111) heterostructures grown by molecular beam epitaxy
Physica Status Solidi (B) Basic Research
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2002
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-0036929386&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina2002,title = {Origin of inversion domains in GaN/AlN/Si(111) heterostructures grown by molecular beam epitaxy},journal = {Physica Status Solidi (B) Basic Research},year = {2002},volume = {234},number = {3},pages = {935-938},author = {Sanchez, A.M. and Ruterana, P. and Molina, S.I. and Pacheco, F.J. and Garcia, R.}}
DOI10.1002/1521-3951(200212)234:3<935::AID-PSSB935>3.0.CO;2-0
Coautoría
Sanchez, A.M.
Size-filtering effects by stacking InAs/InP (001) self-assembled quantum wires into multilayers
Physical Review B - Condensed Matter and Materials Physics
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2002
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-0037098434&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina2002,title = {Size-filtering effects by stacking InAs/InP (001) self-assembled quantum wires into multilayers},journal = {Physical Review B - Condensed Matter and Materials Physics},year = {2002},volume = {65},number = {24},pages = {2413011-2413014},author = {Alén, B. and Martínez-Pastor, J. and González, L. and García, J.M. and Molina, S.I. and Ponce, A. and García, R.}}
EID2-s2.0-0037098434
Coautoría
Alén, B.
A mechanism for the multiple atomic configurations of inversion domain boundaries in GaN layers grown on Si(111)
Applied Physics Letters
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2001
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-0035956120&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina2001,title = {A mechanism for the multiple atomic configurations of inversion domain boundaries in GaN layers grown on Si(111)},journal = {Applied Physics Letters},year = {2001},volume = {79},number = {22},pages = {3588-3590},author = {Sanchez, A.M. and Nouet, G. and Ruterana, P. and Pacheco, F.J. and Molina, S.I. and Garcia, R.}}
DOI10.1063/1.1396322
Coautoría
Sanchez, A.M.
Critical thickness of high-temperature AIN interlayers in GaN on sapphire (0001)
Journal of Electronic Materials
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2001
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-0035331474&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina2001,title = {Critical thickness of high-temperature AIN interlayers in GaN on sapphire (0001)},journal = {Journal of Electronic Materials},year = {2001},volume = {30},number = {5},author = {Sanchez, A.M. and Pacheco, F.J. and Molina, S.I. and Stemmer, J. and Aderhold, J. and Graul, J.}}
EID2-s2.0-0035331474
Coautoría
Sanchez, A.M.
Inversion domains in GaN layers grown on (111) silicon by molecular-beam epitaxy
Applied Physics Letters
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2001
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-0035971686&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina2001,title = {Inversion domains in GaN layers grown on (111) silicon by molecular-beam epitaxy},journal = {Applied Physics Letters},year = {2001},volume = {78},number = {18},pages = {2688-2690},author = {Sánchez, A.M. and Pacheco, F.J. and Molina, S.I. and Garcia, R. and Ruterana, P. and Sánchez-García, M.A. and Calleja, E.}}
DOI10.1063/1.1368373
Coautoría
Sánchez, A.M.
SiC thin films obtained by Si carbonization
Materials Science and Engineering B: Solid-State Materials for Advanced Technology
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2001
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-0035932254&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina2001,title = {SiC thin films obtained by Si carbonization},journal = {Materials Science and Engineering B: Solid-State Materials for Advanced Technology},year = {2001},volume = {80},number = {1-3},pages = {342-344},author = {Molina, S.I. and Morales, F.M. and Araújo, D.}}
DOI10.1016/S0921-5107(00)00661-9
Coautoría
Molina, S.I.
Structural characterization of high temperature AlN intermediate layer in GaN grown by molecular beam epitaxy
Materials Science and Engineering B: Solid-State Materials for Advanced Technology
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2001
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-0035932234&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina2001,title = {Structural characterization of high temperature AlN intermediate layer in GaN grown by molecular beam epitaxy},journal = {Materials Science and Engineering B: Solid-State Materials for Advanced Technology},year = {2001},volume = {80},number = {1-3},pages = {299-303},author = {Sanchez, A.M. and Pacheco, F.J. and Molina, S.I. and Stemmer, J. and Aderhold, J. and Graul, J.}}
DOI10.1016/S0921-5107(00)00645-0
Coautoría
Sanchez, A.M.
Structural characterization of high-dose C++N+ ion-implanted (1 1 1) Si
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2001
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-0035498555&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina2001,title = {Structural characterization of high-dose C++N+ ion-implanted (1 1 1) Si},journal = {Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms},year = {2001},volume = {184},number = {3},pages = {361-370},author = {Barbadillo, L. and Hernández, M.J. and Cervera, M. and Rodríguez, P. and Piqueras, J. and Molina, S.I. and Morales, F.M. and Araújo, D.}}
DOI10.1016/S0168-583X(01)00783-2
Coautoría
Barbadillo, L.
High temperature AlN intermediate layer in GaN grown by molecular beam epitaxy
Journal of Crystal Growth
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2000
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-0033721773&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina2000,title = {High temperature AlN intermediate layer in GaN grown by molecular beam epitaxy},journal = {Journal of Crystal Growth},year = {2000},volume = {216},number = {1},pages = {15-20},author = {Stemmer, J. and Fedler, F. and Klausing, H. and Mistele, D. and Rotter, T. and Semchinova, O. and Aderhold, J. and Sanchez, A.M. and Pacheco, F.J. and Molina, S.I. and Fehrer, M. and Hommel, D. and Graul, J.}}
DOI10.1016/S0022-0248(00)00468-1
Coautoría
Stemmer, J.
Si doping effect on the defect structure in GaN/AlN/Si(111) heteroepitaxial systems
Boletin De La Sociedad Espanola De Ceramica Y Vidrio
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 2000
Citación (BIBTEX): @article{RID:0529141005591-314, title = {Si doping effect on the defect structure in GaN/AlN/Si(111) heteroepitaxial systems}, journal = {Boletin De La Sociedad Espanola De Ceramica Y Vidrio}, year = {2000}, author = {Sanchez, AM and Molina, SI and Pacheco, FJ and Garcia, R and Sanchez-Garcia, MA and Sanchez, FJ and Calleja, E}, volume = {39}, number = {4}, pages = {468-471} }
ISSN0366-3175
Coautoría
Sanchez, AM
Effect of the temperature ramp rate during carbonization of Si (111) on the crystalline quality of SiC produced
Microscopy of Semiconducting Materials 1999, Proceedings
Tipo de Publicación: BOOK
Fecha: 1999
Citación (BIBTEX): @book{RID:0116150735421-318, title = {Effect of the temperature ramp rate during carbonization of Si (111) on the crystalline quality of SiC produced}, publisher = {}, year = {1999}, author = {Pacheco, FJ and Sanchez, AM and Molina, SI and Araujo, D and Garcia, R and Steckl, AJ and Cullis, AG and Beanland, R}, editor = {}, number = {164}, series = {Microscopy of Semiconducting Materials 1999, Proceedings}, pages = {521-524} }
Coautoría
Pacheco, FJ
Electron microscopy study of SiC obtained by the carbonization of Si(111)
Thin Solid Films
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 1999
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-0242580459&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina1999,title = {Electron microscopy study of SiC obtained by the carbonization of Si(111)},journal = {Thin Solid Films},year = {1999},volume = {343-344},number = {1-2},pages = {305-308},author = {Pacheco, F.J. and Sánchez, A.M. and Molina, S.I. and Araújo, D. and Devrajan, J. and Steckl, A.J. and García, R.}}
EID2-s2.0-0242580459
Coautoría
Pacheco, F.J.
Growth of III-nitrides on Si(1 1 1) by molecular beam epitaxy. Doping, optical, and electrical properties
Journal of Crystal Growth
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 1999
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-0038606430&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina1999,title = {Growth of III-nitrides on Si(1 1 1) by molecular beam epitaxy. Doping, optical, and electrical properties},journal = {Journal of Crystal Growth},year = {1999},volume = {201},pages = {296-317},author = {Calleja, E. and Sánchez-García, M.A. and Sánchez, F.J. and Calle, F. and Naranjo, F.B. and Muñoz, E. and Molina, S.I. and Sánchez, A.M. and Pacheco, F.J. and García, R.}}
DOI10.1016/S0022-0248(98)01346-3
Coautoría
Calleja, E.
Influence of Si doping on the subgrain structure of GaN grown on AlN/Si(111)
Physica Status Solidi (A) Applied Research
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 1999
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-0343462255&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina1999,title = {Influence of Si doping on the subgrain structure of GaN grown on AlN/Si(111)},journal = {Physica Status Solidi (A) Applied Research},year = {1999},volume = {176},number = {1},pages = {401-406},author = {Molina, S.I. and Sánchez, A.M. and Pacheco, F.J. and García, R. and Sánchez-García, M.A. and Calleja, E.}}
DOI10.1002/(SICI)1521-396X(199911)176:1<401::AID-PSSA401>3.0.CO;2-D
Coautoría
Molina, S.I.
MBE growth of GaN and AlGaN layers on Si(1 1 1) substrates: Doping effects
Journal of Crystal Growth
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 1999
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-0038797130&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina1999,title = {MBE growth of GaN and AlGaN layers on Si(1 1 1) substrates: Doping effects},journal = {Journal of Crystal Growth},year = {1999},volume = {201},pages = {415-418},author = {Sánchez-García, M.A. and Calleja, E. and Naranjo, F.B. and Sánchez, F.J. and Calle, F. and Muñoz, E. and Sánchez, A.M. and Pacheco, F.J. and Molina, S.I.}}
DOI10.1016/S0022-0248(98)01365-7
Coautoría
Sánchez-García, M.A.
Properties of homoepitaxial and heteroepitaxial GaN layers grown by plasma-assisted MBE
Physica Status Solidi (A) Applied Research
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 1999
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-0343898013&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina1999,title = {Properties of homoepitaxial and heteroepitaxial GaN layers grown by plasma-assisted MBE},journal = {Physica Status Solidi (A) Applied Research},year = {1999},volume = {176},number = {1},pages = {447-452},author = {Sánchez-García, M.A. and Naranjo, F.B. and Pau, J.L. and Jiménez, A. and Calleja, E. and Muñoz, E. and Molina, S.I. and Sánchez, A.M. and Pacheco, F.J. and García, R.}}
DOI10.1002/(SICI)1521-396X(199911)176:1<447::AID-PSSA447>3.0.CO;2-A
Coautoría
Sánchez-García, M.A.
Structural characterisation of AlGaN/AlN/Si(111) heterostructures by transmission electron microscopy
Microscopy of Semiconducting Materials 1999, Proceedings
Tipo de Publicación: BOOK
Fecha: 1999
Citación (BIBTEX): @book{RID:0116150735422-319, title = {Structural characterisation of AlGaN/AlN/Si(111) heterostructures by transmission electron microscopy}, publisher = {}, year = {1999}, author = {Sanchez, AM and Molina, SI and Pacheco, FJ and Garcia, R and Sanchez-Garcia, MA and Calleja, E and Cullis, AG and Beanland, R}, editor = {}, number = {164}, series = {Microscopy of Semiconducting Materials 1999, Proceedings}, pages = {397-400} }
Coautoría
Sanchez, AM
Structural characterization of undoped and Si doped GaN on Si (111)
Lattice Mismatched Thin Films
Tipo de Publicación: BOOK
Fecha: 1999
Citación (BIBTEX): @book{RID:0116150735422-317, title = {Structural characterization of undoped and Si doped GaN on Si (111)}, publisher = {}, year = {1999}, author = {Molina, SI and Sanchez, AM and Pacheco, FJ and Garcia, R and Sanchez-Garcia, MA and Calleja, E and Fitzgerald, EA}, editor = {}, series = {Lattice Mismatched Thin Films}, pages = {177-182} }
Coautoría
Molina, SI
The effect of Si doping on the defect structure of GaN/AIN/Si(111)
Applied Physics Letters
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 1999
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-0032615080&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina1999,title = {The effect of Si doping on the defect structure of GaN/AIN/Si(111)},journal = {Applied Physics Letters},year = {1999},volume = {74},number = {22},pages = {3362-3364},author = {Molina, S.I. and Sánchez, A.M. and Pacheco, F.J. and García, R. and Sánchez-García, M.A. and Sánchez, F.J. and Calleja, E.}}
EID2-s2.0-0032615080
Coautoría
Molina, S.I.
The effects of logging and grazing on the insect community associated with a semi-arid chaco forest in central Argentina
Journal of Arid Environments
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 1999
Citación (BIBTEX): @article{RID:0116150735423-1147, title = {The effects of logging and grazing on the insect community associated with a semi-arid chaco forest in central Argentina}, journal = {Journal of Arid Environments}, year = {1999}, author = {Molina, S. I. and Valladares, G. R. and Gardner, S. and Cabido, M. R.}, volume = {42}, number = {1}, pages = {29-42} }
DOI10.1006/jare.1999.0498
Coautoría
Molina, S. I.
Transmission electron microscopy study of InGaAs/InP superlattices grown on V-shaped surface InP substrates
Applied Surface Science
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 1999
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-0032630882&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina1999,title = {Transmission electron microscopy study of InGaAs/InP superlattices grown on V-shaped surface InP substrates},journal = {Applied Surface Science},year = {1999},volume = {144-145},number = {0},pages = {488-491},author = {Molina, S.I. and Araujo, D. and Rojas, T.C. and Garcia, R. and Morier-Genoud, F. and Marti, U. and Reinhart, F.K.}}
EID2-s2.0-0032630882
Coautoría
Molina, S.I.
Characterisation by TEM and X-ray diffraction of linearly graded composition InGaAs buffer layers on (001) GaAs
Materials Science and Technology
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 1998
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-1542778883&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina1998,title = {Characterisation by TEM and X-ray diffraction of linearly graded composition InGaAs buffer layers on (001) GaAs},journal = {Materials Science and Technology},year = {1998},volume = {14},number = {12},pages = {1273-1278},author = {Pacheco, F.J. and Araújo, D. and Molina, S.I. and García, R. and Sacedón, A. and González-Sanz, F. and Calleja, E. and Kidd, P. and Lourenço, M.A.}}
EID2-s2.0-1542778883
Coautoría
Pacheco, F.J.
Optical emission of a one-dimensional electron gas in semiconductor V-shaped quantum wires
Physical Review B - Condensed Matter and Materials Physics
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 1998
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-0542422199&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina1998,title = {Optical emission of a one-dimensional electron gas in semiconductor V-shaped quantum wires},journal = {Physical Review B - Condensed Matter and Materials Physics},year = {1998},volume = {58},number = {16},pages = {10705-10708},author = {Van Der Meulen, H.P. and Rubio, J. and Azcona, I. and Calleja, J.M. and Rojas, T.C. and Molina, S.I. and Garcia, R. and Marti, U.}}
EID2-s2.0-0542422199
Coautoría
Van Der Meulen, H.P.
Relaxation mechanism of InGaAs single and graded layers grown on (111)B GaAs
Thin Solid Films
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 1998
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-0032045633&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina1998,title = {Relaxation mechanism of InGaAs single and graded layers grown on (111)B GaAs},journal = {Thin Solid Films},year = {1998},volume = {317},number = {1-2},pages = {270-273},author = {Rojas, T.C. and Molina, S.I. and Sacedón, A. and Valtueña, F. and Calleja, E. and García, R.}}
EID2-s2.0-0032045633
Coautoría
Rojas, T.C.
Structural characterization of GaN/AlN/Si (111)
Electron Microscopy 1998, Vol 3
Tipo de Publicación: BOOK
Fecha: 1998
Citación (BIBTEX): @book{RID:0116150735423-327, title = {Structural characterization of GaN/AlN/Si (111)}, publisher = {}, year = {1998}, author = {Molina, SI and Sanchez, AM and Sanchez-Garcia, MA and Calleja, E and Calle, F and Garcia, R and Benavides, HAC and Yacaman, MJ}, editor = {}, series = {Electron Microscopy 1998, Vol 3}, pages = {389-390} }
Coautoría
Molina, SI
EBIC and TEM investigations of laser heterostructures grown on linearly-graded and step-graded buffer layers
Microscopy of Semiconducting Materials 1997
Tipo de Publicación: BOOK
Fecha: 1997
Citación (BIBTEX): @book{RID:0116150735423-332, title = {EBIC and TEM investigations of laser heterostructures grown on linearly-graded and step-graded buffer layers}, publisher = {}, year = {1997}, author = {Romero, MJ and Pacheco, FJ and Gonzalez, D and Rojas, TC and Araujo, D and Molina, SI and Garcia, R and Cullis, AG and Hutchison, JL}, editor = {}, number = {157}, series = {Microscopy of Semiconducting Materials 1997}, pages = {547-550} }
Coautoría
Romero, MJ
Influence of the surface morphology on the relaxation of low-strained InxGa1 - xAs linear buffer structures
Journal of Crystal Growth
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 1997
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-0031550005&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina1997,title = {Influence of the surface morphology on the relaxation of low-strained InxGa1 - xAs linear buffer structures},journal = {Journal of Crystal Growth},year = {1997},volume = {182},number = {3-4},pages = {281-291},author = {Valtueña, J.F. and Sacedón, A. and Alvarez, A.L. and Izpura, I. and Calle, F. and Calleja, E. and MacPherson, G. and Goodhew, P.J. and Pacheco, F.J. and García, R. and Molina, S.I.}}
EID2-s2.0-0031550005
Coautoría
Valtueña, J.F.
Structural study of AlGaAs/InGaAs superlattices grown by MBE on (111)B GaAs substrates
Materials Science and Engineering B
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 1997
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-0031071146&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina1997,title = {Structural study of AlGaAs/InGaAs superlattices grown by MBE on (111)B GaAs substrates},journal = {Materials Science and Engineering B},year = {1997},volume = {44},number = {1-3},pages = {106-109},author = {Rojas, T.C. and Molina, S.I. and Romero, M.J. and Sacedón, A. and Calleja, E. and García, R.}}
EID2-s2.0-0031071146
Coautoría
Rojas, T.C.
Transmission electron microscopy study of Si δ-doped GaAs/AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor structures
Thin Solid Films
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 1997
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-0031248002&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina1997,title = {Transmission electron microscopy study of Si δ-doped GaAs/AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor structures},journal = {Thin Solid Films},year = {1997},volume = {307},number = {1-2},pages = {6-9},author = {Molina, S.I. and Walther, T.}}
EID2-s2.0-0031248002
Coautoría
Molina, S.I.
Design of InGaAs linear graded buffer structures
Applied Physics Letters
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 1995
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-36449005204&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina1995,title = {Design of InGaAs linear graded buffer structures},journal = {Applied Physics Letters},year = {1995},author = {Sacedón, A. and González-Sanz, F. and Calleja, E. and Muñoz, E. and Molina, S.I. and Pacheco, F.J. and Araújo, D. and García, R. and Lourenço, M. and Yang, Z. and Kidd, P. and Dunstan, D.}}
EID2-s2.0-36449005204
Coautoría
Sacedón, A.
Heterogeneous nucleation of planar defects in Mn-doped ZnSe GaAs
Journal of Crystal Growth
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 1995
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-0029633506&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina1995,title = {Heterogeneous nucleation of planar defects in Mn-doped ZnSe GaAs},journal = {Journal of Crystal Growth},year = {1995},volume = {156},number = {3},pages = {163-168},author = {Molina, S.I. and Brown, P.D. and Humphrey, C.J.}}
EID2-s2.0-0029633506
Coautoría
Molina, S.I.
Strain relaxation in step and linearly-graded InGaAs buffer layers on (001)GaAs
Microscopy of Semiconducting Materials 1995
Tipo de Publicación: BOOK
Fecha: 1995
Citación (BIBTEX): @book{RID:0116150735424-335, title = {Strain relaxation in step and linearly-graded InGaAs buffer layers on (001)GaAs}, publisher = {}, year = {1995}, author = {Pacheco, FJ and Gonzalez, D and Molina, SI and Villar, MP and Sacedon, A and Calleja, E and Garcia, R and Cullis, AG and StatonBevan, AE}, editor = {}, volume = {146}, series = {Microscopy of Semiconducting Materials 1995}, pages = {211-214} }
Coautoría
Pacheco, FJ
A STUDY OF THE DEFECT STRUCTURE IN GAAS1-XPX/GAAS ASX-LESS-THAN-0.25
Mechanisms of Thin Film Evolution
Tipo de Publicación: BOOK
Fecha: 1994
Citación (BIBTEX): @book{RID:0116150735424-343, title = {A STUDY OF THE DEFECT STRUCTURE IN GAAS1-XPX/GAAS ASX-LESS-THAN-0.25}, publisher = {}, year = {1994}, author = {ARAGON, G and DECASTRO, MJ and MOLINA, SI and GONZALEZ, Y and GONZALEZ, L and BRIONES, F and GARCIA, R and Yalisove, SM and Thompson, CV and Eaglesham, DJ}, editor = {}, volume = {317}, series = {Mechanisms of Thin Film Evolution}, pages = {315-320} }
Coautoría
ARAGON, G
A comparative study of CoRe superlattices sputtered on glass and Si substrates by grazing angle of incidence RBS, HRTEM, PAC, magnetic and transport properties studies
Nuclear Inst. and Methods in Physics Research, B
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 1994
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-0000871939&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina1994,title = {A comparative study of CoRe superlattices sputtered on glass and Si substrates by grazing angle of incidence RBS, HRTEM, PAC, magnetic and transport properties studies},journal = {Nuclear Inst. and Methods in Physics Research, B},year = {1994},volume = {85},number = {1-4},pages = {202-205},author = {Barradas, N.P. and Leal, J.L. and Soares, J.C. and da Silva, M.F. and Freitas, P.P. and Rots, M. and Molina, S.I. and Garcia, R.}}
DOI10.1016/0168-583X(94)95814-9
Coautoría
Barradas, N.P.
A study of the defect structure in GaAs layers grown at low and high temperatures on Si(001) substrates
Materials Science and Engineering B
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 1994
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-0028725953&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina1994,title = {A study of the defect structure in GaAs layers grown at low and high temperatures on Si(001) substrates},journal = {Materials Science and Engineering B},year = {1994},volume = {28},number = {1-3},pages = {196-199},author = {Aragón, G. and Molina, S.I. and Pacheco, F.J. and González, Y. and González, L. and Briones, F. and García, R.}}
DOI10.1016/0921-5107(94)90046-9
Coautoría
Aragón, G.
CATHODOLUMINESCENCE AND TRANSMISSION ELECTRON-MICROSCOPY STUDY OF ISLAND FORMATION ON INAS/INP QW STRUCTURES DURING GROWTH INTERRUPTIONS
Defect Recognition and Image Processing in Semiconductors and Devices
Tipo de Publicación: BOOK
Fecha: 1994
Citación (BIBTEX): @book{RID:0116150735425-338, title = {CATHODOLUMINESCENCE AND TRANSMISSION ELECTRON-MICROSCOPY STUDY OF ISLAND FORMATION ON INAS/INP QW STRUCTURES DURING GROWTH INTERRUPTIONS}, publisher = {}, year = {1994}, author = {ARAUJO, D and PACHECO, F and CARLIN, JF and RUDRA, A and MOLINA, SI and GARCIA, R and Jimenez, J}, editor = {}, number = {135}, series = {Defect Recognition and Image Processing in Semiconductors and Devices}, pages = {335-338} }
Coautoría
ARAUJO, D
Dislocation distribution in graded composition InGaAs layers
Materials Research Society Symposium Proceedings
Tipo de Publicación: CONFERENCE_PAPER
Fecha: 1994
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-0028344470&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina1994,title = {Dislocation distribution in graded composition InGaAs layers},journal = {Materials Research Society Symposium Proceedings},year = {1994},volume = {325},pages = {223-228},author = {Molina, S.I. and Gutierrez, G. and Sacedon, A. and Calleja, E. and Garcia, R.}}
EID2-s2.0-0028344470
Coautoría
Molina, S.I.
Multilayer strain relaxation determination by XTEM in InGaAs step graded structures
Electron Microscopy 1994, Vols 2a and 2b
Tipo de Publicación: BOOK
Fecha: 1994
Citación (BIBTEX): @book{RID:0116150735425-339, title = {Multilayer strain relaxation determination by XTEM in InGaAs step graded structures}, publisher = {}, year = {1994}, author = {GONZALEZ, D and ARAUJO, D and MOLINA, SI and PACHECO, FJ and ARAGON, G and GONZALEZ, L and GONZALEZ, Y and KIDD, P and GARCIA, R and Jouffrey, B and Colliex, C}, editor = {}, series = {Electron Microscopy 1994, Vols 2a and 2b}, pages = {607-608} }
Coautoría
GONZALEZ, D
Step-graded buffer layer study of the strain relaxation by transmission electron microscopy
Materials Science and Engineering B
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 1994
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-0028695725&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina1994,title = {Step-graded buffer layer study of the strain relaxation by transmission electron microscopy},journal = {Materials Science and Engineering B},year = {1994},volume = {28},number = {1-3},pages = {497-501},author = {González, D. and Araújo, D. and Molina, S.I. and Sacedón, A. and Calleja, E. and García, R.}}
DOI10.1016/0921-5107(94)90114-7
Coautoría
González, D.
Strain relief in linearly graded composition buffer layers: A design scheme to grow dislocation-free (<105 cm-2) and unstrained epilayers
Applied Physics Letters
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 1994
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-21544454349&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina1994,title = {Strain relief in linearly graded composition buffer layers: A design scheme to grow dislocation-free (<105 cm-2) and unstrained epilayers},journal = {Applied Physics Letters},year = {1994},volume = {65},number = {19},pages = {2460-2462},author = {Molina, S.I. and Pacheco, F.J. and Araújo, D. and García, R. and Sacedón, A. and Calleja, E. and Yang, Z. and Kidd, P.}}
DOI10.1063/1.112707
Coautoría
Molina, S.I.
Study of the defects structure in GaAs1-xPx/GaAs as x<0.25
Materials Research Society Symposium Proceedings
Tipo de Publicación: CONFERENCE_PAPER
Fecha: 1994
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-0027987674&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina1994,title = {Study of the defects structure in GaAs1-xPx/GaAs as x<0.25},journal = {Materials Research Society Symposium Proceedings},year = {1994},volume = {317},pages = {315-320},author = {Aragon, G. and De Castro, M.J. and Molina, S.I. and Gonzalez, Y. and Gonzalex, L. and Briones, F. and Garcia, R.}}
EID2-s2.0-0027987674
Coautoría
Aragon, G.
TEM CHARACTERIZATION OF GAAS PIN DIODES AT LOW-TEMPERATURES ON SI SUBSTRATES
Growth, Processing, and Characterization of Semiconductor Heterostructures
Tipo de Publicación: BOOK
Fecha: 1994
Citación (BIBTEX): @book{RID:0116150735425-341, title = {TEM CHARACTERIZATION OF GAAS PIN DIODES AT LOW-TEMPERATURES ON SI SUBSTRATES}, publisher = {}, year = {1994}, author = {ARAGON, G and MOLINA, SI and GONZALEZ, L and GONZALEZ, Y and ANGUITA, JV and BRIONES, E and GARCIA, R and Gumbs, G and Luryi, S and Weiss, B and Wicks, GW}, editor = {}, volume = {326}, series = {Growth, Processing, and Characterization of Semiconductor Heterostructures}, pages = {97-102} }
Coautoría
ARAGON, G
TEM characterization of GaAs pin diodes at low temperatures on Si substrates
Materials Research Society Symposium Proceedings
Tipo de Publicación: CONFERENCE_PAPER
Fecha: 1994
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-0028015280&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina1994,title = {TEM characterization of GaAs pin diodes at low temperatures on Si substrates},journal = {Materials Research Society Symposium Proceedings},year = {1994},volume = {326},pages = {97-102},author = {Aragon, G. and Molina, S.I. and Gonzalez, L. and Gonzalez, Y. and Anguita, J.V. and Briones, F. and Garcia, R.}}
EID2-s2.0-0028015280
Coautoría
Aragon, G.
TEM study of dislocation distribution in linearly-graded composition InGaAs layers on GaAs(001)
Electron Microscopy 1994, Vols 2a and 2b
Tipo de Publicación: BOOK
Fecha: 1994
Citación (BIBTEX): @book{RID:0116150735425-340, title = {TEM study of dislocation distribution in linearly-graded composition InGaAs layers on GaAs(001)}, publisher = {}, year = {1994}, author = {PACHECO, FJ and MOLINA, SI and ARAUJO, D and SACEDON, A and GARCIA, R and Jouffrey, B and Colliex, C}, editor = {}, series = {Electron Microscopy 1994, Vols 2a and 2b}, pages = {609-610} }
Coautoría
PACHECO, FJ
TRANSMISSION ELECTRON-MICROSCOPY STUDY OF INXGA1-XAS/GAAS MULTILAYER BUFFER STRUCTURES USED AS DISLOCATION FILTERS
Materials Science and Engineering B-Solid State Materials For Advanced Technology
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 1994
Citación (BIBTEX): @article{RID:0529141006863-345, title = {TRANSMISSION ELECTRON-MICROSCOPY STUDY OF INXGA1-XAS/GAAS MULTILAYER BUFFER STRUCTURES USED AS DISLOCATION FILTERS}, journal = {Materials Science and Engineering B-Solid State Materials For Advanced Technology}, year = {1994}, author = {GONZALEZ, D and ARAUJO, D and SACEDON, A and CALLEJA, E and MOLINA, SI and ARAGON, G and GARCIA, R}, volume = {28}, number = {1-3}, pages = {515-519} }
ISSN0921-5107
Coautoría
GONZALEZ, D
Transmission electron microscopy study of InxGa1-xAs/GaAs multilayer buffer structures used as dislocation filters
Materials Science and Engineering B
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 1994
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-0028698797&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina1994,title = {Transmission electron microscopy study of InxGa1-xAs/GaAs multilayer buffer structures used as dislocation filters},journal = {Materials Science and Engineering B},year = {1994},volume = {28},number = {1-3},pages = {515-519},author = {González, D. and Araújo, D. and Sacedón, A. and Calleja, E. and Molina, S.I. and Aragón, G. and García, R.}}
DOI10.1016/0921-5107(94)90118-X
Coautoría
González, D.
A study of the evolution process of antiphase boundaries in GaAs on Si
Journal of Electronic Materials
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 1993
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-51249161426&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina1993,title = {A study of the evolution process of antiphase boundaries in GaAs on Si},journal = {Journal of Electronic Materials},year = {1993},volume = {22},number = {5},pages = {567-572},author = {Molina, S.I. and Aragón, G. and García, R. and González, Y. and González, L. and Briones, F.}}
DOI10.1007/BF02661632
Coautoría
Molina, S.I.
CHARACTERIZATION OF THE GAP/SI(001) INTERFACE BY TRANSMISSION ELECTRON-MICROSCOPY
Electron Microscopy and Analysis 1993
Tipo de Publicación: BOOK
Fecha: 1993
Citación (BIBTEX): @book{RID:0116150735426-351, title = {CHARACTERIZATION OF THE GAP/SI(001) INTERFACE BY TRANSMISSION ELECTRON-MICROSCOPY}, publisher = {}, year = {1993}, author = {PACHECO, FJ and KIELY, CJ and MOLINA, SI and ARAGON, G and GARCIA, R and Craven, AJ}, editor = {}, number = {138}, series = {Electron Microscopy and Analysis 1993}, pages = {317-320} }
Coautoría
PACHECO, FJ
DEFECT STUDY OF INAS/GAAS AND GAP/GAAS DOUBLE-HETEROSTRUCTURE
Microscopy of Semiconducting Materials 1993
Tipo de Publicación: BOOK
Fecha: 1993
Citación (BIBTEX): @book{RID:0116150735426-352, title = {DEFECT STUDY OF INAS/GAAS AND GAP/GAAS DOUBLE-HETEROSTRUCTURE}, publisher = {}, year = {1993}, author = {ARAGON, G and MOLINA, SI and GONZALEZ, Y and GONZALEZ, L and BRIONES, F and GARCIA, R and Cullis, AG and StatonBevan, AE and Hutchison, JL}, editor = {}, number = {134}, series = {Microscopy of Semiconducting Materials 1993}, pages = {369-372} }
Coautoría
ARAGON, G
ERRORS IN THE DETERMINATION BY HREM OF STEPS AT ALAS/GAAS INTERFACES
Physical Concepts and Materials For Novel Optoelectronic Device Applications Ii: International Symposium
Tipo de Publicación: BOOK
Fecha: 1993
Citación (BIBTEX): @book{RID:0116150735426-354, title = {ERRORS IN THE DETERMINATION BY HREM OF STEPS AT ALAS/GAAS INTERFACES}, publisher = {}, year = {1993}, author = {MOLINA, SI and PACHECO, FJ and GARCIA, R and Beltram, F and Gornik, E}, editor = {}, volume = {1985}, series = {Physical Concepts and Materials For Novel Optoelectronic Device Applications Ii: International Symposium}, pages = {244-253} }
Coautoría
MOLINA, SI
Experimental evidence of the structure of annihilation of antiphase boundaries in GaAs on Si
Materials Letters
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 1993
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-0027146741&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina1993,title = {Experimental evidence of the structure of annihilation of antiphase boundaries in GaAs on Si},journal = {Materials Letters},year = {1993},volume = {15},number = {5-6},pages = {353-355},author = {Molina, S.I. and Aragón, G. and González, Y. and González, L. and Briones, F. and Ponce, F.A. and García, R.}}
DOI10.1016/0167-577X(93)90094-E
Coautoría
Molina, S.I.
RELAXED EPITAXIAL LAYERS - THE EFFECT OF AN ADDED INTERFACE
Microscopy of Semiconducting Materials 1993
Tipo de Publicación: BOOK
Fecha: 1993
Citación (BIBTEX): @book{RID:0116150735426-353, title = {RELAXED EPITAXIAL LAYERS - THE EFFECT OF AN ADDED INTERFACE}, publisher = {}, year = {1993}, author = {KIDD, P and DUNSTAN, DJ and GREY, R and DAVID, J and FEWSTER, PF and ANDREW, NL and MOLINA, SI and KIELY, CJ and Cullis, AG and StatonBevan, AE and Hutchison, JL}, editor = {}, number = {134}, series = {Microscopy of Semiconducting Materials 1993}, pages = {321-324} }
Coautoría
KIDD, P
Structural Characterization of GaP/GaAs/GaP heterostructure by TEM
Materials Research Society Symposium Proceedings
Tipo de Publicación: CONFERENCE_PAPER
Fecha: 1993
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-0027803855&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina1993,title = {Structural Characterization of GaP/GaAs/GaP heterostructure by TEM},journal = {Materials Research Society Symposium Proceedings},year = {1993},volume = {280},pages = {449-452},author = {Aragon, G. and Molina, S.I. and Garcia, R.}}
EID2-s2.0-0027803855
Coautoría
Aragon, G.
Structural characterization of highly strained InAs N monolayer lasers and quantum well structures by X-ray diffraction and transmission electron microscopy
Journal of Crystal Growth
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 1993
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-0027904737&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina1993,title = {Structural characterization of highly strained InAs N monolayer lasers and quantum well structures by X-ray diffraction and transmission electron microscopy},journal = {Journal of Crystal Growth},year = {1993},volume = {127},number = {1-4},pages = {596-600},author = {Mazuelas, A. and Molina, S.I. and Aragón, G. and Meléndez, J. and Dotor, M.L. and Huertas, P. and Briones, F.}}
DOI10.1016/0022-0248(93)90691-O
Coautoría
Mazuelas, A.
TEM AND PL STUDY OF STRAIN RELAXATION IN INGAAS/GAAS MQW STRUCTURES
Electron Microscopy and Analysis 1993
Tipo de Publicación: BOOK
Fecha: 1993
Citación (BIBTEX): @book{RID:0116150735427-350, title = {TEM AND PL STUDY OF STRAIN RELAXATION IN INGAAS/GAAS MQW STRUCTURES}, publisher = {}, year = {1993}, author = {GONZALEZ, D and ARAUJO, D and ARAGON, G and MOLINA, SI and SACEDON, A and GUTIERREZ, G and GARCIA, R and Craven, AJ}, editor = {}, number = {138}, series = {Electron Microscopy and Analysis 1993}, pages = {313-316} }
Coautoría
GONZALEZ, D
DEFECT STRUCTURES IN HETEROEPITAXIAL INAS/GAAS AND GAAS/INAS GROWN BY ATOMIC LAYER MOLECULAR-BEAM EPITAXY
Defect Engineering in Semiconductor Growth, Processing and Device Technology
Tipo de Publicación: BOOK
Fecha: 1992
Citación (BIBTEX): @book{RID:0116150735427-358, title = {DEFECT STRUCTURES IN HETEROEPITAXIAL INAS/GAAS AND GAAS/INAS GROWN BY ATOMIC LAYER MOLECULAR-BEAM EPITAXY}, publisher = {}, year = {1992}, author = {MOLINA, SI and ARAGON, G and GARCIA, R and ASHOK, S and CHEVALLIER, J and SUMINO, K and WEBER, E}, editor = {}, volume = {262}, series = {Defect Engineering in Semiconductor Growth, Processing and Device Technology}, pages = {163-168} }
Coautoría
MOLINA, SI
High-resolution electron microscopy study of ALMBE InAs grown on (001) GaAs substrates
Ultramicroscopy
Tipo de Publicación: JOURNAL_ARTICLE
Fecha: 1992
URL de la publicación: http://www.scopus.com/inward/record.url?eid=2-s2.0-0026832919&partnerID=MN8TOARS
Citación (BIBTEX): @article { molina1992,title = {High-resolution electron microscopy study of ALMBE InAs grown on (001) GaAs substrates},journal = {Ultramicroscopy},year = {1992},volume = {40},number = {3},pages = {370-375},author = {Molina, S.I. and Aragón, G. and Petford-Long, A.-K. and García, R.}}
DOI10.1016/0304-3991(92)90134-6
Coautoría
Molina, S.I.