Información ORCID de MOLINA RUBIO, SERGIO IGNACIO


Biografía


Inició su carrera investigadora como Becario de Investigación del Plan Nacional de Microelectrónica (1990), posteriormente ocupó los puestos de Profesor Asociado (1994) y Profesor Titular de Universidad (1998), y actualmente ocupa, desde el año 2005, el puesto de CATEDRÁTICO DE UNIVERSIDAD, en el Área de Ciencia de los Materiales e Ingeniería Metalúrgica. Ha sido Premio Extraordinario de Licenciatura y Doctorado. La CNEAI ha reconocido su labor investigadora con cuatro sexenios (1990-2013). Su labor académica la desarrolla adscrito a la Facultad de Ciencias y es investigador del INSTITUTO DE MICROSCOPÍA ELECTRÓNICA Y MATERIALES (IMEYMAT), que integra a 10 grupos de investigación y 90 investigadores. Ha sido COORDINADOR de las Comisiones Gestora y Promotora para la creación del Instituto IMEYMAT (2010-2013), DIRECTOR interino (2013-2014), y DIRECTOR en funciones del mismo. Ha ocupado los puestos de RESPONSABLE Y ASESOR CIENTÍFICO de la División de Microscopía Electrónica de la UCA, y actualmente es RESPONSABLE CIENTÍFICO de la División de Fabricación Aditiva de la UCA. \nActualmente dirige el Grupo de Investigación MATERIALES Y NANOTECNOLOGÍA PARA LA INNOVACIÓN, que centra su actividad en la investigación, desarrollo e innovación en las siguientes líneas: (i) Materiales nanocomposites (grafeno y materiales relacionados, nanopartículas y puntos cuánticos) y nanotecnología para fabricación aditiva; (ii) aplicación de composites y fabricación aditiva para buscar soluciones innovadoras demandadas por el mercado; (iii) fabricación aditiva con granza polimérica en grandes volúmenes; y (iv) nanocaracterización y nanoprocesado de materiales mediante microscopía electrónica y haces de iones focalizados. \nSu PRODUCCIÓN investigadora se resume en la realización de 225 publicaciones (en su mayor parte del JCR), 330 comunicaciones a congresos (27 capítulos de libros), en su participación como investigador de 34 proyectos de investigación y otras acciones de I+D, habiendo actuado como IP de 19 de estos proyectos, y en la dirección de 23 trabajos académicos de I+D, de los cuales 11 son tesis doctorales. \nTambién dedica parte de su trabajo a actividades de transferencia tecnológica y emprendimiento, habiendo liderado contratos de I+D en las líneas antes expuestas. En los últimos 6 años ha sido inventor de 10 patentes y otra propiedad intelectual protegida, ha registrado 3 marcas y ha sido promotor de una empresa de base tecnológica, relacionada con materiales y fabricación aditiva. Ha recibido 4 premios en convocatorias de premios de ideas y proyectos de empresa (convocatoria AtrÉBT-UCA) y ha recibido el Premio a la Innovación Tecnológica 50 K de la Fundación San Telmo, así como el primer accésit al Premio de Transferencia Tecnológica Mariano Marcos Bárcena 2018 por el trabajo de fabricación aditiva realizado con la empresa NAVANTIA. Destaca el desarrollo de metodologías para el procesado de materiales para fabricación aditiva y la determinación de propiedades a nanoescala de materiales, ya que estas metodologías se encuentran registradas y en explotación comercial a escala internacional. \nEn cuanto a su actividad internacional, destacar que ha sido IP en la UCA y Coordinador de Formación en la Red de Excelencia Europea SANDiE (300 investigadores), y que ha completado su formación pre- y posdoctoral en las universidades de Cambridge (7 meses), Univ. de Liverpool (3 meses), EPFL- Lausanne (3 meses), habiendo sido Profesor Visitante del Oak Ridge National Laboratory - EEUU (14 meses) y Univ. de Sheffield (1 mes).


Empleo


PROF. (DEPARTAMENTO DE CIENCIA DE LOS MATERIALES E ING. METALÚRGICA Y QUÍMICA INORGÁNICA)

Universidad de Cadiz Campus de Rio San Pedro: Puerto Real, CADIZ, España



Obras


Synthesis and Characterisation of Acrylic Resin-Al Powder Composites Suitable for Additive Manufacturing

2020 | JOURNAL_ARTICLE

DOI: 10.3390/polym12081642

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Influence of the Degree of Cure in the Bulk Properties of Graphite Nanoplatelets Nanocomposites Printed via Stereolithography

2020 | JOURNAL_ARTICLE

DOI: 10.3390/polym12051103

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Effect of the cap layer growth temperature on the Sb distribution in InAs/InSb/InAs sub-monolayer heterostructures for mid-infrared devices

2020 | JOURNAL_ARTICLE

DOI: 10.1088/1361-6528/ab59f8

EID: 2-s2.0-85076585941

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Investigation on Sb distribution for InSb/InAs sub-monolayer heterostructure using TEM techniques

2020 | JOURNAL_ARTICLE

DOI: 10.1088/1361-6528/ab4751

EID: 2-s2.0-85073184358

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A sugar-beet waste based thermoplastic agro-composite as substitute for raw materials

2020 | JOURNAL_ARTICLE

DOI: 10.1016/j.jclepro.2020.120382

EID: 2-s2.0-85079329988

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Development of carbon fiber acrylonitrile styrene acrylate composite for large format additive manufacturing

2020 | JOURNAL_ARTICLE

DOI: 10.1016/j.matdes.2020.108577

EID: 2-s2.0-85080078200

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Heterometallic Titanium-Organic Frameworks by Metal-Induced Dynamic Topological Transformations

2020 | JOURNAL_ARTICLE

DOI: 10.1021/jacs.0c00117

EID: 2-s2.0-85082813277

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Development of Surface-Coated Polylactic Acid/Polyhydroxyalkanoate (PLA/PHA) Nanocomposites

2019 | JOURNAL_ARTICLE

DOI: 10.3390/polym11030400

EID: 2-s2.0-85063382975

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Modified qHAADF method for atomic column-by-column compositional quantification of semiconductor heterostructures

2019 | JOURNAL_ARTICLE

DOI: 10.1007/s10853-018-3073-y

EID: 2-s2.0-85056647765

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Design and development of a parametrizable electric guitar through additive manufacturing,Diseño y desarrollo de una guitarra eléctrica parametrizable mediante procesos de fabricación aditiva

2019 | JOURNAL_ARTICLE

DOI: 10.6036/8672

EID: 2-s2.0-85060932340

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Effect of the thermal annealing and the nominal composition in the elemental distribution of InxAl1-xAsySb1-y for triple junction solar cells

2019 | JOURNAL_ARTICLE

DOI: 10.1016/j.jallcom.2019.04.119

EID: 2-s2.0-85064402597

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High Spatial Resolution Mapping of Localized Surface Plasmon Resonances in Single Gallium Nanoparticles

2019 | JOURNAL_ARTICLE

DOI: 10.1002/smll.201902920

EID: 2-s2.0-85071914139

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Influence of the crosstalk on the intensity of HAADF-STEM images of quaternary semiconductor materials

2019 | JOURNAL_ARTICLE

DOI: 10.1111/jmi.12763

EID: 2-s2.0-85056282299

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Inhibition of light emission from the metastable tetragonal phase at low temperatures in island-like films of lead iodide perovskites

2019 | JOURNAL_ARTICLE

DOI: 10.1039/c9nr07543g

EID: 2-s2.0-85075814129

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Large-format fused deposition additive manufacturing: a review

2019 | JOURNAL_ARTICLE

DOI: 10.1108/RPJ-05-2018-0126

EID: 2-s2.0-85078030796

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Materials with enhanced adhesive properties based on acrylonitrile-butadiene-styrene (ABS)/thermoplastic polyurethane (TPU) blends for fused filament fabrication (FFF)

2019 | JOURNAL_ARTICLE

DOI: 10.1016/j.matdes.2019.108044

EID: 2-s2.0-85069645726

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Optical properties of metamorphic type-I InAs1-xSbx/AlyIn1-yAs quantum wells grown on GaAs for the mid-infrared spectral range

2019 | JOURNAL_ARTICLE

DOI: 10.1088/1361-6463/ab37cf

EID: 2-s2.0-85073103888

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Room-temperature Operation of Low-voltage, Non-volatile, Compound-semiconductor Memory Cells

2019 | JOURNAL_ARTICLE

DOI: 10.1038/s41598-019-45370-1

EID: 2-s2.0-85067668546

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Structural characterization of bulk and nanoparticle lead halide perovskite thin films by (S)TEM techniques

2019 | JOURNAL_ARTICLE

DOI: 10.1088/1361-6528/aafc85

EID: 2-s2.0-85061131113

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Exploring the Capability of HAADF-STEM Techniques to Characterize Graphene Distribution in Nanocomposites by Simulations

2018 | JOURNAL_ARTICLE

DOI: 10.1155/2018/4906746

EID: 2-s2.0-85062471622

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Influence of the AlN interlayer thickness on the photovoltaic properties of in-rich AlInN on Si heterojunctions deposited by RF sputtering

2018 | JOURNAL_ARTICLE

DOI: 10.1063/1.5041924

EID: 2-s2.0-85056743752

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Analysis of Bi Distribution in Epitaxial GaAsBi by Aberration-Corrected HAADF-STEM

2018 | JOURNAL_ARTICLE

DOI: 10.1186/s11671-018-2530-5

EID: 2-s2.0-85059889790

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Comparison of the thickness determined by fresnel contrast and rutherford backscattering spectrometry in ultra-thin layers

2018 | BOOK_CHAPTER

DOI: 10.1201/9781351074636

EID: 2-s2.0-85053312876

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Gaussian kernel density functions for compositional quantification in atom probe tomography

2018 | JOURNAL_ARTICLE

DOI: 10.1016/j.matchar.2018.02.033

EID: 2-s2.0-85042483462

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Geometric-Structural Study of the Accelerated Degradation of Mold Cavities for HDPE Injection

2018 | JOURNAL_ARTICLE

DOI: 10.1007/s11668-017-0378-0

EID: 2-s2.0-85039858939

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Geometric-Structural Study of the Accelerated Degradation of Mold Cavities for HDPE Injection

2018 | JOURNAL_ARTICLE

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HAADF-STEM for the analysis of core-shell quantum dots

2018 | JOURNAL_ARTICLE

DOI: 10.1007/s10853-018-2694-5

EID: 2-s2.0-85049321050

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Influence of the additivation of graphene-like materials on the properties of polyamide for Powder Bed Fusion

2018 | JOURNAL_ARTICLE

DOI: 10.1007/s40964-018-0056-0

EID: 2-s2.0-85060076553

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Influence of the growth temperature on the composition distribution at sub-nm scale of InAlAsSb for solar cells

2018 | JOURNAL_ARTICLE

DOI: 10.1016/j.jallcom.2018.05.333

EID: 2-s2.0-85048418784

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Large-format polymeric pellet-based additive manufacturing for the naval industry

2018 | JOURNAL_ARTICLE

DOI: 10.1016/j.addma.2018.07.012

EID: 2-s2.0-85050512059

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Neural networks applied to the determination of thickness and defocus from high resolution transmission electron microscopy images

2018 | BOOK_CHAPTER

DOI: 10.1201/9781351074636

EID: 2-s2.0-85053321291

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Quality improvement of AlInN/p-Si heterojunctions with AlN buffer layer deposited by RF-sputtering

2018 | JOURNAL_ARTICLE

DOI: 10.1016/j.jallcom.2018.08.059

EID: 2-s2.0-85051409294

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Structural and chemical characterization of CdSe-ZnS core-shell quantum dots

2018 | JOURNAL_ARTICLE

DOI: 10.1016/j.apsusc.2018.06.149

EID: 2-s2.0-85049319112

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Effect of an in-situ thermal annealing on the structural properties of self-assembled GaSb/GaAs quantum dots

2017 | JOURNAL_ARTICLE

DOI: 10.1016/j.apsusc.2016.04.131

EID: 2-s2.0-84964608866

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Effect of annealing on the compositional modulation of InAlAsSb

2017 | JOURNAL_ARTICLE

DOI: 10.1016/j.apsusc.2016.06.091

EID: 2-s2.0-84999737931

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Size effect and scaling power-law for superelasticity in shape-memory alloys at the nanoscale

2017 | JOURNAL_ARTICLE

DOI: 10.1038/nnano.2017.91

EID: 2-s2.0-85026856778

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Size effect and scaling power-law for superelasticity in shape-memory alloys at the nanoscale

2017 | JOURNAL_ARTICLE

DOI: 10.1038/NNANO.2017.91

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Structural characterization of InAlAsSb/InGaAs/InP heterostructures for solar cells

2017 | JOURNAL_ARTICLE

DOI: 10.1016/j.apsusc.2016.07.094

EID: 2-s2.0-85027936688

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Wide bandgap, strain-balanced quantum well tunnel junctions on InP substrates

2016 | JOURNAL_ARTICLE

DOI: 10.1063/1.4948958

EID: 2-s2.0-84970039388

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Atom probe tomography analysis of InAlGaAs capped InAs/GaAs stacked quantum dots with variable barrier layer thickness

2016 | JOURNAL_ARTICLE

DOI: 10.1016/j.actamat.2015.10.048

EID: 2-s2.0-84947284161

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Atom-scale compositional distribution in InAlAsSb-based triple junction solar cells by atom probe tomography

2016 | JOURNAL_ARTICLE

DOI: 10.1088/0957-4484/27/30/305402

EID: 2-s2.0-84978419921

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Atomic-column scanning transmission electron microscopy analysis of misfit dislocations in GaSb/GaAs quantum dots

2016 | JOURNAL_ARTICLE

DOI: 10.1007/s10853-016-0051-0

EID: 2-s2.0-84969180144

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CVD synthesis of carbon spheres using NiFe-LDHs as catalytic precursors: Structural, electrochemical and magnetoresistive properties

2016 | JOURNAL_ARTICLE

DOI: 10.1039/c5tc02861b

EID: 2-s2.0-84954158283

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HAADF-STEM analysis of the composition distribution in InAlAsSb/InGaAs/InP layers for solar cells applications

2016 | JOURNAL_ARTICLE

DOI: 10.1017/S1431927616000349

EID: 2-s2.0-85014521225

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Small-pore driven high capacitance in a hierarchical carbon: Via carbonization of Ni-MOF-74 at low temperatures

2016 | JOURNAL_ARTICLE

DOI: 10.1039/c6cc02252a

EID: 2-s2.0-84978383968

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Structural quality of GaSb/GaAs quantum dots for solar cells analyzed by electron microscopy techniques

2016 | JOURNAL_ARTICLE

DOI: 10.1017/S1431927616000386

EID: 2-s2.0-85014435440

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3D compositional analysis at atomic scale of InAlGaAs capped InAs/GaAs QDs

2015 | JOURNAL_ARTICLE

DOI: 10.1016/j.scriptamat.2015.03.013

EID: 2-s2.0-84928269446

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Delta doping and positioning effects of type II GaSb quantum dots in GaAs solar cell

2015 | JOURNAL_ARTICLE

DOI: 10.1080/14328917.2015.1115807

EID: 2-s2.0-84958698833

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Effect of doping on the morphology of GaSb/GaAs nanostructures for solar cells

2015 | JOURNAL_ARTICLE

DOI: 10.1016/j.apsusc.2015.10.161

EID: 2-s2.0-84961806928

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High spatial resolution mapping of individual and collective localized surface plasmon resonance modes of silver nanoparticle aggregates: correlation to optical measurements

2015 | JOURNAL_ARTICLE

DOI: 10.1186/s11671-015-1024-y

EID: 2-s2.0-84938509659

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Mapping the plasmonic response of gold nanoparticles embedded in TiO2 thin films

2015 | JOURNAL_ARTICLE

DOI: 10.1088/0957-4484/26/40/405702

EID: 2-s2.0-84947568036

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Molecular beam epitaxy of InAlAsSb for the top cell in high-efficiency InP-based lattice-matched triple-junction solar cells

2015 | CONFERENCE_PAPER

DOI: 10.1109/PVSC.2015.7355911

EID: 2-s2.0-84961615482

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A methodology for the extraction of quantitative information from electron microscopy images at the atomic level

2014 | CONFERENCE_PAPER

DOI: 10.1088/1742-6596/522/1/012013

EID: 2-s2.0-84902996538

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Analysis of electron beam damage of exfoliated MoS2 sheets and quantitative HAADF-STEM imaging

2014 | JOURNAL_ARTICLE

DOI: 10.1016/j.ultramic.2014.05.004

EID: 2-s2.0-84902355461

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Charge transfer interactions in self-assembled single walled carbon nanotubes/Dawson-Wells polyoxometalate hybrids

2014 | JOURNAL_ARTICLE

DOI: 10.1039/c4sc01335b

EID: 2-s2.0-84907518041

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Defect reduction in heteroepitaxial InP on Si by epitaxial lateral overgrowth

2014 | JOURNAL_ARTICLE

DOI: 10.1166/mex.2014.1140

EID: 2-s2.0-84892704735

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Modeling, design and experimental results for high efficiency multi-junction solar cells lattice matched to InP

2014 | CONFERENCE_PAPER

DOI: 10.1117/12.2041289

EID: 2-s2.0-84901797763

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Preferential sites for InAsP/InP quantum wire nucleation using molecular dynamics

2014 | JOURNAL_ARTICLE

DOI: 10.1140/epjb/e2014-50052-2

EID: 2-s2.0-84919723286

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Transmission electron microscopy of 1D-nanostructures

2014 | BOOK

DOI: 10.1007/978-3-642-38934-4_14

EID: 2-s2.0-85031024950

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Compositional analysis of InAs-GaAs-GaSb heterostructures by Low-Loss Electron Energy Loss Spectroscopy

2013 | JOURNAL_ARTICLE

DOI: 10.1088/1742-6596/471/1/012012

EID: 2-s2.0-84890625059

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Extreme voltage recovery in GaAs:Ti intermediate band solar cells

2013 | JOURNAL_ARTICLE

DOI: 10.1016/j.solmat.2012.09.028

EID: 2-s2.0-84867606657

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Fabrication of Needle-Shaped Specimens Containing Subsurface Nanostructures for Electron Tomography

2013 | BOOK_CHAPTER

DOI: 10.1007/978-3-319-02874-3_9

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High spatial resolution mapping of surface plasmon resonance modes in single and aggregated gold nanoparticles assembled on DNA strands

2013 | JOURNAL_ARTICLE

DOI: 10.1186/1556-276X-8-337

EID: 2-s2.0-84898061506

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Influence of RF-sputtering power on formation of vertically stacked Si1-xGex nanocrystals between ultra-thin amorphous Al2O3 layers: structural and photoluminescence properties

2013 | JOURNAL_ARTICLE

DOI: 10.1088/0022-3727/46/38/385301

EID: 2-s2.0-84885099900

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Strain analysis for the prediction of the preferential nucleation sites of stacked quantum dots by combination of FEM and APT

2013 | JOURNAL_ARTICLE

DOI: 10.1186/1556-276x-8-513

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Strain analysis for the prediction of the preferential nucleation sites of stacked quantum dots by combination of FEM and APT

2013 | JOURNAL_ARTICLE

DOI: 10.1186/1556-276X-8-513

EID: 2-s2.0-84891391074

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Towards High Efficiency Multi-Junction Solar Cells Grown on InP Substrates

2013 | JOURNAL_ARTICLE

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Towards High Efficiency Multi-Junction Solar Cells Grown on InP Substrates

2013 | JOURNAL_ARTICLE

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Towards high efficiency multi-junction solar cells grown on InP Substrates

2013 | CONFERENCE_PAPER

DOI: 10.1109/PVSC.2013.6744116

EID: 2-s2.0-84896466261

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A methodology for the fabrication by FIB of needle-shape specimens around sub-surface features at the nanometre scale

2012 | JOURNAL_ARTICLE

DOI: 10.1016/j.micron.2011.11.011

EID: 2-s2.0-84858154278

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Analysis of the 3D distribution of stacked self-assembled quantum dots by electron tomography

2012 | JOURNAL_ARTICLE

DOI: 10.1186/1556-276x-7-681

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Analysis of the 3D distribution of stacked selfassembled quantum dots by electron tomography

2012 | JOURNAL_ARTICLE

DOI: 10.1186/1556-276X-7-681

EID: 2-s2.0-84875330223

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Cubic and hexagonal InGaAsN dilute arsenides by unintentional homogeneous incorporation of As into InGaN

2012 | JOURNAL_ARTICLE

DOI: 10.1016/j.scriptamat.2011.11.025

EID: 2-s2.0-84855865656

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InAs/AlGaAs quantum dot intermediate band solar cells with enlarged sub-bandgaps

2012 | CONFERENCE_PAPER

DOI: 10.1109/PVSC.2012.6317694

EID: 2-s2.0-84869398331

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InAs/AlGaAs quantum dot intermediate band solar cells with enlarged sub-bandgaps

2012 | JOURNAL_ARTICLE

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Initial Results from a 200 kV UltraSTEM

2012 | JOURNAL_ARTICLE

DOI: 10.1017/S1431927612003480

EID: 2-s2.0-85008543395

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Investigation of saturation and excitation behavior of 1.5 mu m emission from Er3+ ions in SiO2 sensitized with Si nanocrystals

2012 | JOURNAL_ARTICLE

DOI: 10.1002/pssc.201200311

EID: 2-s2.0-84871394137

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Photoluminescence Excitation Spectroscopy of Si Nanocrystals in SiO2

2012 | BOOK_CHAPTER

DOI: 10.1149/1.3700404

EID: 2-s2.0-84869044684

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Production of Nanometer-Size GaAs Nanocristals by Nanosecond Laser Ablation in Liquid

2012 | JOURNAL_ARTICLE

DOI: 10.1166/jnn.2012.4548

EID: 2-s2.0-84865125095

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Quantification of corrugation in simulated graphene by electron tomography techniques

2012 | JOURNAL_ARTICLE

DOI: 10.1063/1.4768701

EID: 2-s2.0-84869988563

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Quantitative study of the interfacial intermixing and segregation effects across the wetting layer of Ga(As,Sb)-capped InAs quantum dots

2012 | JOURNAL_ARTICLE

DOI: 10.1063/1.4731790

EID: 2-s2.0-84863706893

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Tuning the properties of Ge-quantum dots superlattices in amorphous silica matrix through deposition conditions

2012 | JOURNAL_ARTICLE

DOI: 10.1063/1.3702776

EID: 2-s2.0-84861754430

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Aberration-corrected scanning transmission electron microscopy of nanostructures for photovoltaics

2011 | CONFERENCE_PAPER

DOI: 10.1109/PVSC.2011.6186668

EID: 2-s2.0-84861033795

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Calculation of integrated intensities in aberration-corrected Z-contrast images

2011 | JOURNAL_ARTICLE

DOI: 10.1093/jmicro/dfq078

EID: 2-s2.0-79951612689

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Compositional Analysis with Atomic Column Spatial Resolution by 5th-Order Aberration-Corrected Scanning Transmission Electron Microscopy

2011 | JOURNAL_ARTICLE

DOI: 10.1017/S1431927611000213

EID: 2-s2.0-80054883821

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Distribution of bismuth atoms in epitaxial GaAsBi

2011 | JOURNAL_ARTICLE

DOI: 10.1063/1.3562376

EID: 2-s2.0-79952645546

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Formation and Emission Properties of Single InGaAs/GaAs Quantum Dots and Pairs Grown by Droplet Epitaxy

2011 | JOURNAL_ARTICLE

DOI: 10.1063/1.3666433

EID: 2-s2.0-84855488546

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Light Emission from Nanocrystalline Si Inverse Opals and Controlled Passivation by Atomic Layer Deposited Al2O3

2011 | JOURNAL_ARTICLE

DOI: 10.1002/adma.201101797

EID: 2-s2.0-81555200987

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Novel Method of Preparation of Gold-Nanoparticle-Doped TiO2 and SiO2 Plasmonic Thin Films: Optical Characterization and Comparison with Maxwell-Garnett Modeling

2011 | JOURNAL_ARTICLE

DOI: 10.1002/adfm.201101020

EID: 2-s2.0-80052994510

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Seeing inside materials by aberration-corrected electron microscopy

2011 | JOURNAL_ARTICLE

DOI: 10.1504/IJNT.2011.044438

EID: 2-s2.0-84857201880

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Strain balanced quantum posts

2011 | JOURNAL_ARTICLE

DOI: 10.1063/1.3583455

EID: 2-s2.0-79955678507

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Structural Origin of Enhanced Luminescence Efficiency of Antimony Irradiated InAs Quantum Dots

2011 | JOURNAL_ARTICLE

DOI: 10.1166/asl.2011.1873

EID: 2-s2.0-84856741424

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Structural characterization of GaSb-capped InAs/GaAs quantum dots with a GaAs intermediate layer

2011 | JOURNAL_ARTICLE

DOI: 10.1016/j.matlet.2011.02.086

EID: 2-s2.0-79953232756

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Three dimensional atom probe imaging of GaAsSb quantum rings

2011 | JOURNAL_ARTICLE

DOI: 10.1016/j.ultramic.2011.03.018

EID: 2-s2.0-79959977686

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Tuning the properties of exciton complexes in self-assembled GaSb/GaAs quantum rings

2011 | JOURNAL_ARTICLE

DOI: 10.1103/PhysRevB.83.115311

EID: 2-s2.0-79961039613

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Blocking of indium incorporation by antimony in III-V-Sb nanostructures

2010 | JOURNAL_ARTICLE

DOI: 10.1088/0957-4484/21/14/145606

EID: 2-s2.0-77949544592

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Effect of annealing on the structural and optical properties of (311)B GaAsBi layers

2010 | JOURNAL_ARTICLE

DOI: 10.1016/j.apsusc.2010.03.017

EID: 2-s2.0-77953232000

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Exploring semiconductor quantum dots and wires by high resolution electron microscopy

2010 | BOOK

DOI: 10.1088/1742-6596/209/1/012004

EID: 2-s2.0-77950483520

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Growth of Low-Density Vertical Quantum Dot Molecules with Control in Energy Emission

2010 | JOURNAL_ARTICLE

DOI: 10.1007/s11671-010-9771-2

EID: 2-s2.0-78649744946

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In-x(GayAl1-y)(1-x)As quaternary alloys for quantum dot intermediate band solar cells

2010 | BOOK

DOI: 10.1016/j.egypro.2010.07.019

EID: 2-s2.0-77957792013

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Lateral absorption measurements of InAs/GaAs quantum dots stacks: potential as intermediate band material for high efficiency solar cells

2010 | BOOK

DOI: 10.1016/j.egypro.2010.07.006

EID: 2-s2.0-77957768748

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Morphological evolution of InAs/InP quantum wires through aberration-corrected scanning transmission electron microscopy

2010 | JOURNAL_ARTICLE

DOI: 10.1088/0957-4484/21/32/325706

EID: 2-s2.0-77957308104

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Reducing carrier escape in the InAs/GaAs quantum dot intermediate band solar cell

2010 | JOURNAL_ARTICLE

DOI: 10.1063/1.3468520

EID: 2-s2.0-77957736868

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Strain balanced quantum posts for intermediate band solar cells

2010 | CONFERENCE_PAPER

DOI: 10.1109/PVSC.2010.5614557

EID: 2-s2.0-78650135958

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Structural and optical changes induced by incorporation of antimony into InAs/GaAs(001) quantum dots

2010 | JOURNAL_ARTICLE

DOI: 10.1103/PhysRevB.82.235316

EID: 2-s2.0-78650870276

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Structural and optical changes induced by incorporation of antimony into InAs/GaAs(001) quantum dots (vol 82, 235316, 2010)

2010 | JOURNAL_ARTICLE

DOI: 10.1103/PhysRevB.82.239904

EID: 2-s2.0-78650862520

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Surface nanostructuring of TiO2 thin films by high energy ion irradiation

2010 | JOURNAL_ARTICLE

DOI: 10.1103/PhysRevB.82.115420

EID: 2-s2.0-77957711598

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Theoretical modelling of quaternary GaInAsSb/GaAs self-assembled quantum dots

2010 | JOURNAL_ARTICLE

DOI: 10.1088/1742-6596/245/1/012081

EID: 2-s2.0-78651228025

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Through-Focal HAADF-STEM of buried nanostructures

2010 | BOOK

DOI: 10.1088/1742-6596/209/1/012032

EID: 2-s2.0-77950483258

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Transmission electron microscopy study of vertical quantum dots molecules grown by droplet epitaxy

2010 | JOURNAL_ARTICLE

DOI: 10.1016/j.apsusc.2010.03.024

EID: 2-s2.0-77953324279

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A comparison of ZnMgSSe and MgS wide bandgap semiconductors used as barriers: Growth, structure and luminescence properties

2009 | JOURNAL_ARTICLE

DOI: 10.1016/j.jcrysgro.2008.10.040

EID: 2-s2.0-63549129242

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Aberration-corrected scanning transmission electron microscopy: from atomic imaging and analysis to solving energy problems

2009 | JOURNAL_ARTICLE

DOI: 10.1098/rsta.2009.0112

EID: 2-s2.0-70349421051

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Accuracy assessment of strain mapping from Z-contrast images of strained nanostructures

2009 | JOURNAL_ARTICLE

DOI: 10.1063/1.3243990

EID: 2-s2.0-70349922931

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Carrier localization in GaBiAs probed by photomodulated transmittance and photoluminescence

2009 | JOURNAL_ARTICLE

DOI: 10.1063/1.3168429

EID: 2-s2.0-68249152254

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Column-by-column compositional mapping by Z-contrast imaging

2009 | JOURNAL_ARTICLE

DOI: 10.1016/j.ultramic.2008.10.008

EID: 2-s2.0-57849100000

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Erratum to: "Column-by-column compositional mapping by Z-contrast imaging" [Ultramicroscopy 109(2) (2009) 172-176] (DOI:10.1016/j.ultramic.2008.10.008)

2009 | JOURNAL_ARTICLE

DOI: 10.1016/j.ultramic.2009.06.008

EID: 2-s2.0-68749093801

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Formation of spatially addressed Ga(As)Sb quantum rings on GaAs(001) substrates by droplet epitaxy

2009 | JOURNAL_ARTICLE

EID: 2-s2.0-61749092018

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High resolution electron microscopy of GaAs capped GaSb nanostructures

2009 | JOURNAL_ARTICLE

DOI: 10.1063/1.3077009

EID: 2-s2.0-59349104384

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Microstructural improvements of InP on GaAs (001) grown by molecular beam epitaxy by in situ hydrogenation and postgrowth annealing

2009 | JOURNAL_ARTICLE

DOI: 10.1063/1.3077610

EID: 2-s2.0-59349102530

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Photomodulated transmittance of GaBiAs layers grown on (001) and (311)B GaAs substrates

2009 | JOURNAL_ARTICLE

DOI: 10.1016/j.mejo.2008.06.025

EID: 2-s2.0-61449169083

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A Method to Determine the Strain and Nucleation Sites of Stacked Nano-Objects

2008 | JOURNAL_ARTICLE

DOI: 10.1166/jnn.2008.123

EID: 2-s2.0-54149109849

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Aqueous Near-Infrared Fluorescent Composites Based on Apoferritin-Encapsulated PbS Quantum Dots

2008 | JOURNAL_ARTICLE

DOI: 10.1002/adma.200800530

EID: 2-s2.0-54949122142

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Carrier recombination effects in strain compensated quantum dot stacks embedded in solar cells

2008 | JOURNAL_ARTICLE

DOI: 10.1063/1.2978243

EID: 2-s2.0-52949122102

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Experimental and simulated strain field maps in stacked quantum wires

2008 | JOURNAL_ARTICLE

DOI: 10.1017/S1431927608087084

EID: 2-s2.0-49549094479

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Point defect configurations of supersaturated Au atoms inside Si nanowires

2008 | JOURNAL_ARTICLE

DOI: 10.1021/nl072670+

EID: 2-s2.0-46649108933

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Simulation of high angle annular dark field scanning transmission electron microscopy images of large nanostructures

2008 | JOURNAL_ARTICLE

DOI: 10.1063/1.2998656

EID: 2-s2.0-54149090886

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Stress compensation by GaP monolayers for stacked InAs/GaAs quantum dots solar cells

2008 | CONFERENCE_PAPER

DOI: 10.1109/PVSC.2008.4922519

EID: 2-s2.0-84879730453

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A TEM study of the evolution of InAs/GaAs self-assembled dots on (311)B GaAs with growth interruption

2007 | JOURNAL_ARTICLE

DOI: 10.1088/0268-1242/22/2/029

EID: 2-s2.0-34247244200

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Critical strain region evaluation of self-assembled semiconductor quantum dots

2007 | JOURNAL_ARTICLE

DOI: 10.1088/0957-4484/18/47/475503

EID: 2-s2.0-35748951609

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Direct imaging of quantum wires nucleated at diatomic steps

2007 | JOURNAL_ARTICLE

DOI: 10.1063/1.2790483

EID: 2-s2.0-34948840547

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Error quantification in strain mapping methods

2007 | JOURNAL_ARTICLE

DOI: 10.1017/S1431927607070407

EID: 2-s2.0-34948885612

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Excitons in coupled InAs/InP self-assembled quantum wires

2007 | JOURNAL_ARTICLE

DOI: 10.1103/PhysRevB.75.125120

EID: 2-s2.0-34047101385

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Incorporation of sb in InAs/GaAs quantum dots

2007 | JOURNAL_ARTICLE

DOI: 10.1063/1.2826546

EID: 2-s2.0-37549022212

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Molecular beam epitaxy of GaBiAs on (311)B GaAs substrates

2007 | JOURNAL_ARTICLE

DOI: 10.1063/1.2827181

EID: 2-s2.0-37549008285

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The Peak Pairs algorithm for strain mapping from HRTEM images

2007 | JOURNAL_ARTICLE

DOI: 10.1016/j.ultramic.2007.01.019

EID: 2-s2.0-34548329658

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Determination of the strain generated in InAs/InP quantum wires: prediction of nucleation sites

2006 | JOURNAL_ARTICLE

DOI: 10.1088/0957-4484/17/22/020

EID: 2-s2.0-33846056055

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Direct experimental evidence of metastable epitaxial zinc-blende MgS

2006 | JOURNAL_ARTICLE

DOI: 10.1063/1.2353826

EID: 2-s2.0-33748955351

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Chemical composition and strain distribution of InAs/GaAs(001) stacked quantum rings

2005 | BOOK

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Quantification of the influence of TEM operation parameters on the error of HREM image matching

2005 | BOOK

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Quantitative measurements of the inhomogeneous strain field of stacked self-assembled InAs/InP(001) quantum wires by the Peak Finding Method

2005 | BOOK

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Room temperature emission at 1.6 mu m from InGaAs quantum dots capped with GaAsSb

2005 | JOURNAL_ARTICLE

DOI: 10.1063/1.2130529

EID: 2-s2.0-27744536985

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Strain mapping from HRTEM images

2005 | BOOK

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Vertical order in stacked layers of self-assembled In(Ga)As quantum rings on GaAs (001)

2005 | JOURNAL_ARTICLE

DOI: 10.1063/1.1866228

EID: 2-s2.0-17044405970

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Comparison of the thickness determined by Fresnel contrast and Rutherford backscattering spectrometry in ultra-thin layers

2004 | BOOK

EID: 2-s2.0-7744230492

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Crystalline inclusions formed in C + N + BF2 coimplanted on silicon (111)

2004 | JOURNAL_ARTICLE

DOI: 10.1007/s00604-003-0147-5

EID: 2-s2.0-2942660140

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Emission wavelength engineering of InAs/InP(001) quantum wires

2004 | JOURNAL_ARTICLE

DOI: 10.1140/epjb/e2004-00228-4

EID: 2-s2.0-6344235525

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Influence of the Ge coverage prior to carbonization on the structure of SiC grown on Si(111)

2004 | BOOK

EID: 2-s2.0-8744242099

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Interfacial strain and defects in Si (001) carbonisation layers for 3C-SiC hetero-epitaxy

2004 | BOOK

EID: 2-s2.0-8644236637

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Microchemical analysis and microstructural development of Cr-doped mullites

2004 | JOURNAL_ARTICLE

EID: 2-s2.0-2942683624

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Neural networks applied to the determination of thickness and defocus from high resolution transmission electron microscopy images

2004 | BOOK

EID: 2-s2.0-7744227880

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Size and critical thickness evolution during growth of stacked layers of InAS/InP(001) quantum wires studied by in situ stress measurements

2004 | BOOK

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Size control of InAs/InP(001) quantum wires by tailoring P/As exchange

2004 | JOURNAL_ARTICLE

DOI: 10.1063/1.1787155

EID: 2-s2.0-4544224590

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Stacking of InAs/InP(001) quantum wires studied by in situ stress measurements: Role of inhomogeneous stress fields

2004 | JOURNAL_ARTICLE

DOI: 10.1063/1.1759374

EID: 2-s2.0-3042635866

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Structural study of micro and nanotubes synthesized by rapid thermal chemical vapor deposition

2004 | JOURNAL_ARTICLE

EID: 2-s2.0-2942675337

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The role of Ge predeposition temperature in the MBE epitaxy of SiC on silicon

2004 | BOOK

DOI: 10.1002/pssc.200303940

EID: 2-s2.0-2342448059

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Transmission Electron Microscopy study of SiC layers obtained by carbonization of Si wafers,Estudio por microscopía electrónica y espectroscopía de infra-rojos de capas de SiC obtenidas mediante carburización de obleas de Si

2004 | JOURNAL_ARTICLE

EID: 2-s2.0-33744750762

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Comparative TEM Investigation of MBE and RTCVD Conversion of Si into SiC

2003 | BOOK

EID: 2-s2.0-18744420199

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HRTEM study of AlxGa1-xN/AlN DBR mirrors

2003 | JOURNAL_ARTICLE

DOI: 10.1016/S0925-9635(02)00215-7

EID: 2-s2.0-0037508550

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N+BF2 and N+C+BF2 high-dose co-implantation in silicon

2003 | JOURNAL_ARTICLE

DOI: 10.1007/s00339-002-1503-8

EID: 2-s2.0-0037355744

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SiC voids, mosaic microstructure and dislocations distribution in Si carbonized layers

2003 | JOURNAL_ARTICLE

DOI: 10.1016/S0925-9635(02)00300-X

EID: 2-s2.0-0037514589

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Size and critical thickness evolution during growth of stacked layers of InAs/InP(001) quantum wires studied by in situ stress measurements

2003 | CONFERENCE_PAPER

EID: 2-s2.0-2942672682

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Size self-filtering effect in vertical stacks of InAs/InP self-assembled quantum wires

2003 | JOURNAL_ARTICLE

DOI: 10.1016/S1386-9477(02)00740-3

EID: 2-s2.0-3042681544

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Structural Study of GaN Layers Grown on Carbonized Si(111) Substrates

2003 | BOOK

EID: 2-s2.0-18744421706

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Transmission electron microscopy study of simultaneous high-dose C++N+ co-implantation into (111)Si

2003 | JOURNAL_ARTICLE

DOI: 10.1016/S0040-6090(02)01284-1

EID: 2-s2.0-0037463219

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Transmission electron microscopy study of ultra-thin SiC layers obtained by rapid thermal carbonization of Si wafers

2003 | JOURNAL_ARTICLE

DOI: 10.1002/pssa.200306278

EID: 2-s2.0-0037279755

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AlN buffer layer thickness influence on inversion domains in GaN/AlN/Si(1 1 1)

2002 | JOURNAL_ARTICLE

DOI: 10.1016/S0921-5107(02)00030-2

EID: 2-s2.0-0037198536

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Correlation between the AlN buffer layer thickness and the GaN polarity in GaN/AlN/Si(111) grown by MBE

2002 | CONFERENCE_PAPER

EID: 2-s2.0-0038710560

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Effect of high temperature single and multiple AlN intermediate layers on N-polar and Ga-polar GaN grown by molecular beam epitaxy

2002 | JOURNAL_ARTICLE

EID: 2-s2.0-0036375685

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Filtering study of threading dislocations in AlN buffered MBE GaN/sapphire using single and multiple high temperature AlN intermediate layers

2002 | JOURNAL_ARTICLE

DOI: 10.1002/1521-396X(200208)192:2<424::AID-PSSA424>3.0.CO;2-Q

EID: 2-s2.0-0036670111

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High reflectivity AlGaN/AlN DBR mirrors grown by PA-MBE

2002 | CONFERENCE_PAPER

DOI: 10.1002/pssc.200390037

EID: 2-s2.0-84875089872

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Origin of inversion domains in GaN/AlN/Si(111) heterostructures grown by molecular beam epitaxy

2002 | JOURNAL_ARTICLE

DOI: 10.1002/1521-3951(200212)234:3<935::AID-PSSB935>3.0.CO;2-0

EID: 2-s2.0-0036929386

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Size-filtering effects by stacking InAs/InP (001) self-assembled quantum wires into multilayers

2002 | JOURNAL_ARTICLE

EID: 2-s2.0-0037098434

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A mechanism for the multiple atomic configurations of inversion domain boundaries in GaN layers grown on Si(111)

2001 | JOURNAL_ARTICLE

DOI: 10.1063/1.1396322

EID: 2-s2.0-0035956120

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Critical thickness of high-temperature AIN interlayers in GaN on sapphire (0001)

2001 | JOURNAL_ARTICLE

EID: 2-s2.0-0035331474

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Inversion domains in GaN layers grown on (111) silicon by molecular-beam epitaxy

2001 | JOURNAL_ARTICLE

DOI: 10.1063/1.1368373

EID: 2-s2.0-0035971686

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SiC thin films obtained by Si carbonization

2001 | JOURNAL_ARTICLE

DOI: 10.1016/S0921-5107(00)00661-9

EID: 2-s2.0-0035932254

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Structural characterization of high temperature AlN intermediate layer in GaN grown by molecular beam epitaxy

2001 | JOURNAL_ARTICLE

DOI: 10.1016/S0921-5107(00)00645-0

EID: 2-s2.0-0035932234

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Structural characterization of high-dose C++N+ ion-implanted (1 1 1) Si

2001 | JOURNAL_ARTICLE

DOI: 10.1016/S0168-583X(01)00783-2

EID: 2-s2.0-0035498555

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High temperature AlN intermediate layer in GaN grown by molecular beam epitaxy

2000 | JOURNAL_ARTICLE

DOI: 10.1016/S0022-0248(00)00468-1

EID: 2-s2.0-0033721773

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Si doping effect on the defect structure in GaN/AlN/Si(111) heteroepitaxial systems

2000 | JOURNAL_ARTICLE

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Effect of the temperature ramp rate during carbonization of Si (111) on the crystalline quality of SiC produced

1999 | BOOK

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Electron microscopy study of SiC obtained by the carbonization of Si(111)

1999 | JOURNAL_ARTICLE

EID: 2-s2.0-0242580459

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Growth of III-nitrides on Si(1 1 1) by molecular beam epitaxy. Doping, optical, and electrical properties

1999 | JOURNAL_ARTICLE

DOI: 10.1016/S0022-0248(98)01346-3

EID: 2-s2.0-0038606430

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Influence of Si doping on the subgrain structure of GaN grown on AlN/Si(111)

1999 | JOURNAL_ARTICLE

DOI: 10.1002/(SICI)1521-396X(199911)176:1<401::AID-PSSA401>3.0.CO;2-D

EID: 2-s2.0-0343462255

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MBE growth of GaN and AlGaN layers on Si(1 1 1) substrates: Doping effects

1999 | JOURNAL_ARTICLE

DOI: 10.1016/S0022-0248(98)01365-7

EID: 2-s2.0-0038797130

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Properties of homoepitaxial and heteroepitaxial GaN layers grown by plasma-assisted MBE

1999 | JOURNAL_ARTICLE

DOI: 10.1002/(SICI)1521-396X(199911)176:1<447::AID-PSSA447>3.0.CO;2-A

EID: 2-s2.0-0343898013

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Structural characterisation of AlGaN/AlN/Si(111) heterostructures by transmission electron microscopy

1999 | BOOK

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Structural characterization of undoped and Si doped GaN on Si (111)

1999 | BOOK

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The effect of Si doping on the defect structure of GaN/AIN/Si(111)

1999 | JOURNAL_ARTICLE

EID: 2-s2.0-0032615080

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Transmission electron microscopy study of InGaAs/InP superlattices grown on V-shaped surface InP substrates

1999 | JOURNAL_ARTICLE

EID: 2-s2.0-0032630882

Mostrar Detalles




Characterisation by TEM and X-ray diffraction of linearly graded composition InGaAs buffer layers on (001) GaAs

1998 | JOURNAL_ARTICLE

EID: 2-s2.0-1542778883

Mostrar Detalles




Optical emission of a one-dimensional electron gas in semiconductor V-shaped quantum wires

1998 | JOURNAL_ARTICLE

EID: 2-s2.0-0542422199

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Relaxation mechanism of InGaAs single and graded layers grown on (111)B GaAs

1998 | JOURNAL_ARTICLE

EID: 2-s2.0-0032045633

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Structural characterization of GaN/AlN/Si (111)

1998 | BOOK

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EBIC and TEM investigations of laser heterostructures grown on linearly-graded and step-graded buffer layers

1997 | BOOK

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Influence of the surface morphology on the relaxation of low-strained InxGa1 - xAs linear buffer structures

1997 | JOURNAL_ARTICLE

DOI: 10.1016/S0022-0248(97)00377-1

EID: 2-s2.0-0031550005

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Structural study of AlGaAs/InGaAs superlattices grown by MBE on (111)B GaAs substrates

1997 | JOURNAL_ARTICLE

EID: 2-s2.0-0031071146

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Transmission electron microscopy study of Si δ-doped GaAs/AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor structures

1997 | JOURNAL_ARTICLE

EID: 2-s2.0-0031248002

Mostrar Detalles




Design of InGaAs linear graded buffer structures

1995 | JOURNAL_ARTICLE

EID: 2-s2.0-36449005204

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Heterogeneous nucleation of planar defects in Mn-doped ZnSe GaAs

1995 | JOURNAL_ARTICLE

EID: 2-s2.0-0029633506

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Strain relaxation in step and linearly-graded InGaAs buffer layers on (001)GaAs

1995 | BOOK

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A STUDY OF THE DEFECT STRUCTURE IN GAAS1-XPX/GAAS ASX-LESS-THAN-0.25

1994 | BOOK

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A comparative study of CoRe superlattices sputtered on glass and Si substrates by grazing angle of incidence RBS, HRTEM, PAC, magnetic and transport properties studies

1994 | JOURNAL_ARTICLE

DOI: 10.1016/0168-583X(94)95814-9

EID: 2-s2.0-0000871939

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A study of the defect structure in GaAs layers grown at low and high temperatures on Si(001) substrates

1994 | JOURNAL_ARTICLE

DOI: 10.1016/0921-5107(94)90046-9

EID: 2-s2.0-0028725953

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CATHODOLUMINESCENCE AND TRANSMISSION ELECTRON-MICROSCOPY STUDY OF ISLAND FORMATION ON INAS/INP QW STRUCTURES DURING GROWTH INTERRUPTIONS

1994 | BOOK

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Dislocation distribution in graded composition InGaAs layers

1994 | CONFERENCE_PAPER

EID: 2-s2.0-0028344470

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Multilayer strain relaxation determination by XTEM in InGaAs step graded structures

1994 | BOOK

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Step-graded buffer layer study of the strain relaxation by transmission electron microscopy

1994 | JOURNAL_ARTICLE

DOI: 10.1016/0921-5107(94)90114-7

EID: 2-s2.0-0028695725

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Strain relief in linearly graded composition buffer layers: A design scheme to grow dislocation-free (<105 cm-2) and unstrained epilayers

1994 | JOURNAL_ARTICLE

DOI: 10.1063/1.112707

EID: 2-s2.0-21544454349

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Study of the defects structure in GaAs1-xPx/GaAs as x<0.25

1994 | CONFERENCE_PAPER

EID: 2-s2.0-0027987674

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TEM CHARACTERIZATION OF GAAS PIN DIODES AT LOW-TEMPERATURES ON SI SUBSTRATES

1994 | BOOK

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TEM characterization of GaAs pin diodes at low temperatures on Si substrates

1994 | CONFERENCE_PAPER

EID: 2-s2.0-0028015280

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TEM study of dislocation distribution in linearly-graded composition InGaAs layers on GaAs(001)

1994 | BOOK

Mostrar Detalles




Transmission electron microscopy study of InxGa1-xAs/GaAs multilayer buffer structures used as dislocation filters

1994 | JOURNAL_ARTICLE

DOI: 10.1016/0921-5107(94)90118-X

EID: 2-s2.0-0028698797

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A study of the evolution process of antiphase boundaries in GaAs on Si

1993 | JOURNAL_ARTICLE

DOI: 10.1007/BF02661632

EID: 2-s2.0-51249161426

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CHARACTERIZATION OF THE GAP/SI(001) INTERFACE BY TRANSMISSION ELECTRON-MICROSCOPY

1993 | BOOK

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DEFECT STUDY OF INAS/GAAS AND GAP/GAAS DOUBLE-HETEROSTRUCTURE

1993 | BOOK

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ERRORS IN THE DETERMINATION BY HREM OF STEPS AT ALAS/GAAS INTERFACES

1993 | BOOK

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Experimental evidence of the structure of annihilation of antiphase boundaries in GaAs on Si

1993 | JOURNAL_ARTICLE

DOI: 10.1016/0167-577X(93)90094-E

EID: 2-s2.0-0027146741

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RELAXED EPITAXIAL LAYERS - THE EFFECT OF AN ADDED INTERFACE

1993 | BOOK

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Structural Characterization of GaP/GaAs/GaP heterostructure by TEM

1993 | CONFERENCE_PAPER

EID: 2-s2.0-0027803855

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Structural characterization of highly strained InAs N monolayer lasers and quantum well structures by X-ray diffraction and transmission electron microscopy

1993 | JOURNAL_ARTICLE

DOI: 10.1016/0022-0248(93)90691-O

EID: 2-s2.0-0027904737

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TEM AND PL STUDY OF STRAIN RELAXATION IN INGAAS/GAAS MQW STRUCTURES

1993 | BOOK

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DEFECT STRUCTURES IN HETEROEPITAXIAL INAS/GAAS AND GAAS/INAS GROWN BY ATOMIC LAYER MOLECULAR-BEAM EPITAXY

1992 | BOOK

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High-resolution electron microscopy study of ALMBE InAs grown on (001) GaAs substrates

1992 | JOURNAL_ARTICLE

DOI: 10.1016/0304-3991(92)90134-6

EID: 2-s2.0-0026832919

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A sugar-beet waste based thermoplastic agro-composite as substitute for raw materials

A sugar-beet waste based thermoplastic agro-composite as substitute for raw materials | JOURNAL_ARTICLE

DOI: {10.1016/j.jclepro.2020.120382}

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